SBIR Phase II: Activation and Mobility Profiling for High-mobility Semiconductor Materials

SBIR 第二阶段：高迁移率半导体材料的活化和迁移率分析

• 批准号: 1632322
• 负责人: Abhijeet Joshi
• 金额: $ 75万
• 依托单位: Active Layer Parametrics, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-08-01 至 2019-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1632322&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Activation; Mobility

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project is to accelerate advancement in high-mobility materials. These materials are being increasingly used in the electronics device industry. This project's goal is to enable better devices by providing complete data on the effects of manufacturing processes and better enabling their optimization. Innovative electronic device structures such as faster computer chips, and more powerful RF circuits require development of smaller and smaller devices employing more advanced materials. The innovation that is being advanced through this Phase II program directly impacts this development.This Small Business Innovation Research (SBIR) Phase II project will develop a deployable system to directly measure high-resolution mobility, resistivity, and carrier concentration profiles for high-mobility semiconductor materials. Current electrical profiling methods provide partial data for these material systems that form the basis of the multi-billion dollar semiconductor logic device and RF/power chip industries. The objectives of this Phase II program are to further demonstrate a prototype by developing and integrating high-reliability sub-systems to build a beta-level measurement tool with nm-level resolution. This is expected to reduce the semiconductor wafer area needed to evaluate high-mobility materials, and develop the measurement capability to target all high-mobility materials with potential applications in IC and RF/power industries.

这个小企业创新研究（SBIR）第二阶段项目的更广泛的影响/商业潜力是加速高流动性材料的发展。 这些材料越来越多地用于电子设备行业。 该项目的目标是通过提供有关制造过程影响的完整数据并更好地实现其优化来实现更好的设备。 创新的电子器件结构，如更快的计算机芯片和更强大的RF电路，需要开发越来越小的器件，采用更先进的材料。 该小型企业创新研究（SBIR）二期项目将开发一种可部署的系统，用于直接测量高迁移率半导体材料的高分辨率迁移率、电阻率和载流子浓度分布。 目前的电分析方法为这些材料系统提供了部分数据，这些材料系统形成了数十亿美元的半导体逻辑器件和RF/功率芯片工业的基础。 第二阶段计划的目标是通过开发和集成高可靠性子系统来进一步展示原型，以构建具有nm级分辨率的β级测量工具。 预计这将减少评估高迁移率材料所需的半导体晶圆面积，并开发针对IC和RF/功率行业中具有潜在应用的所有高迁移率材料的测量能力。