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SBIR Phase II: Ultra Low Defect Gallium Nitride Mediated by Metal Alloys

SBIR Phase II: Ultra Low Defect Gallium Nitride Mediated by Metal Alloys
SBIR 第二阶段:金属合金介导的超低缺陷氮化镓
批准号:
1534736
负责人:
Francisco Machuca
金额:
$75.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-08-15 至 2017-07-31
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中文摘要
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英文摘要
The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project addresses a path to achieve the metric of less than $1 per kilolumen in Gallium Nitride (GaN) based light emitting diodes (LEDs). This is expected to spur widespread adoption of solid state lighting which, according to the US Department of Energy, could result in electricity savings equal to the output of 44 gigawatt power plants by 2027. The price for LEDs is slowing adoption. LEDs don't typically need to be better; they need to be cheaper. This project could directly address this adoption problem by lowering the cost of making LEDs by eliminating one of the most expensive steps in the LED production process.This Small Business Innovation Research (SBIR) Phase II project will address the technical problems in Gallium Nitride (GaN) based light emitting diodes (LEDs), namely using traditional buffer layers to grow GaN on non-GaN substrates. Traditional approaches are typically expensive and result in crystalline defects because the buffer materials used are non-ductile crystalline structures which very effectively propagate, rather than annihilate, defects. This project develops a new substrate made with a patented crystalline metal and process that will let the manufacturers spend less time and effort to get the same or even better LED crystalline quality than they can achieve today. Low cost growth techniques are used and to reduce defects in GaN LEDs and to improve the dollar per kilolumen cost to performance metric.
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SBIR Phase I: Ultra Low Defect Gallium Nitride Mediated by Metal Alloys
  • 批准号:
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  • 项目类别:
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  • 资助金额:
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  • 财政年份:
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  • 负责人:
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  • 依托单位:
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