SBIR Phase II: Ultra Low Defect Gallium Nitride Mediated by Metal Alloys

SBIR 第二阶段：金属合金介导的超低缺陷氮化镓

• 批准号: 1534736
• 负责人: Francisco Machuca
• 金额: $ 75万
• 依托单位: Tivra Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-15 至 2017-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1534736&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Ultra; Low

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project addresses a path to achieve the metric of less than $1 per kilolumen in Gallium Nitride (GaN) based light emitting diodes (LEDs). This is expected to spur widespread adoption of solid state lighting which, according to the US Department of Energy, could result in electricity savings equal to the output of 44 gigawatt power plants by 2027. The price for LEDs is slowing adoption. LEDs don't typically need to be better; they need to be cheaper. This project could directly address this adoption problem by lowering the cost of making LEDs by eliminating one of the most expensive steps in the LED production process.This Small Business Innovation Research (SBIR) Phase II project will address the technical problems in Gallium Nitride (GaN) based light emitting diodes (LEDs), namely using traditional buffer layers to grow GaN on non-GaN substrates. Traditional approaches are typically expensive and result in crystalline defects because the buffer materials used are non-ductile crystalline structures which very effectively propagate, rather than annihilate, defects. This project develops a new substrate made with a patented crystalline metal and process that will let the manufacturers spend less time and effort to get the same or even better LED crystalline quality than they can achieve today. Low cost growth techniques are used and to reduce defects in GaN LEDs and to improve the dollar per kilolumen cost to performance metric.

这个小企业创新研究（SBIR）二期项目的更广泛的影响/商业潜力解决了实现氮化镓（GaN）基发光二极管（led）每千加仑低于1美元的指标的途径。据美国能源部预计，这将刺激固态照明的广泛采用，到2027年，这将节省相当于44吉瓦发电厂发电量的电力。led的价格正在减缓采用。led通常不需要更好；它们需要更便宜。该项目可以通过消除LED生产过程中最昂贵的步骤之一来降低制造LED的成本，从而直接解决这一采用问题。这个小型企业创新研究（SBIR）二期项目将解决基于氮化镓（GaN）的发光二极管（led）的技术问题，即使用传统的缓冲层在非氮化镓衬底上生长GaN。传统的方法通常是昂贵的，并导致晶体缺陷，因为使用的缓冲材料是非延展性的晶体结构，非常有效地传播，而不是消除，缺陷。该项目开发了一种由专利结晶金属和工艺制成的新衬底，这将使制造商花费更少的时间和精力来获得与今天相同甚至更好的LED晶体质量。使用低成本增长技术来减少氮化镓led的缺陷，并提高每千美元的性能成本。