GOALI: Collaborative Research: Interactions of Polishing and Incidental Nanoparticles in Chemical Mechanical Planarization Processes with Artificial Membranes and Human Cell Lines

GOALI：合作研究：化学机械平坦化过程中抛光和附带纳米颗粒与人造膜和人类细胞系的相互作用

• 批准号: 1604647
• 负责人: Shyam Aravamudhan
• 金额: $ 19万
• 依托单位: North Carolina Agricultural & Technical State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-08-01 至 2021-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1604647&HistoricalAwards=false
• 关键词: GOALI; Collaborative; Research; Interactions; Polishing

PI: Chen, Kai Loon#: 1605815COLLABORATIVEPI: Aravamudhan, Shyam #: 1604647Chemical Mechanical Planarization (CMP) is one of the important semiconductor manufacturing processes used in the production of advanced electronic devices such as computers, smart phones, and tablets. The CMP process uses huge volumes (millions of tons) of silica, ceria, or alumina particles in the form of abrasive slurries to planarize electronic circuits during the manufacturing process. However, environmental safety and health (ESH) impacts from the release of used CMP slurries containing nanoparticles into the natural environment and workplace exposure are largely unknown. The objective of this research is to study the ESH impacts and interactions of both pristine and used CMP nanoparticles with artificial cell membranes and human cell lines.Even though NPs are used in a large-scale in the CMP process during the manufacture of integrated circuits, little is known about their environmental and human health impacts, particularly the transformation of nanoparticles during the CMP process and their corresponding workplace exposure, fate, behavior, and toxicity. This is mainly due to the inability to obtain access to the transformed nanoparticle slurries from the CMP process. The main objectives of this project are to (1) systematically investigate, detect, and characterize the transformation of nanoparticle slurries during the CMP processes; (2) examine the influence of CMP and incidental nanoparticles to attach to and disrupt artificial cell membranes and their ability to affect human cell lines; and (3) determine the role of nanoparticle-membrane interactions on nanoparticle toxicity.This research has the potential to be transformative because a strong understanding of the biological interactions of pristine and transformed CMP NPs is not only relevant to the electronics industry, but also has wider applicability for a number of other nanoparticle applications, which routinely undergo life-cycle transformations through different physical and chemical processes. The research results will be disseminated through publications in peer-reviewed journals and student presentations at national scientific meetings. They will also be incorporated into undergraduate and graduate courses and community outreach programs, including K-12 scientific activities for an inner-city Baltimore elementary/middle school, NanoDay activities for the local community, NanoBus after-school program, and community college engagement. Lastly, the active involvement of an industrial partner will result in implementation of better engineering controls and safer CMP processes.

主要研究者：陈启龙#：1605815合作PI：Aravamudhan，Shyam #：1604647化学机械平坦化（CMP）是用于生产先进电子设备（如计算机、智能手机和平板电脑）的重要半导体制造工艺之一。CMP工艺在制造过程中使用大量（数百万吨）研磨浆料形式的二氧化硅、二氧化铈或氧化铝颗粒来平坦化电子电路。然而，环境安全和健康（ESH）的影响，从释放到自然环境和工作场所暴露的使用CMP浆料含有纳米粒子在很大程度上是未知的。本研究的目的是研究原始和使用过的CMP纳米颗粒与人工细胞膜和人类细胞系的ESH影响和相互作用。尽管纳米颗粒在集成电路制造期间的CMP工艺中大规模使用，但对其环境和人类健康的影响知之甚少，特别是纳米颗粒在CMP工艺中的转化及其相应的工作场所暴露，命运、行为和毒性。这主要是由于不能从CMP工艺获得转化的纳米颗粒浆料。本项目的主要目标是（1）系统地研究、检测和表征CMP过程中纳米颗粒浆料的转化;（2）研究CMP和附带纳米颗粒对附着和破坏人工细胞膜的影响及其影响人类细胞系的能力;（3）确定纳米颗粒的作用-膜相互作用对纳米颗粒毒性的影响。这项研究有可能是变革性的，因为对原始和转化的CMP纳米颗粒不仅与电子行业相关，而且对许多其他纳米颗粒应用具有更广泛的适用性，这些应用通常通过不同的物理和化学过程经历生命周期转化。研究结果将通过在同行评审的期刊上发表文章和学生在国家科学会议上发表演讲来传播。他们也将被纳入本科和研究生课程和社区外展计划，包括K-12科学活动的内城巴尔的摩小学/中学，NanoDay活动为当地社区，NanoBus课后计划，和社区大学的参与。最后，工业合作伙伴的积极参与将实现更好的工程控制和更安全的CMP工艺。

项目成果

Acute and chronic toxicity to Daphnia magna of colloidal silica nanoparticles in a chemical mechanical planarization slurry after polishing a gallium arsenide wafer

• DOI: 10.1016/j.impact.2018.12.004
• 发表时间: 2019
• 期刊: NanoImpact
• 影响因子: 4.9
• 作者: S. Karimi;Meiline Troeung;Ruhung Wang;R. Draper;P. Pantano;S. Crawford;S. Aravamudhan