GOALI: Optimization of Ion Beam Extraction - Enabling Technology for Advanced Semiconductor Fabrication

这个项目将导致开发一个基本的了解如何创建离子束用于改善硅片加工。现代电子技术的核心硅芯片由数百万到数十亿个非常小的制造结构组成。为了实现电子功能，这些结构必须具有修改的电子传导能力，并且必须通过纳米级加工过程进行物理构建。这两个过程都依赖于等离子体（原子被分解成带正电的离子和带负电的电子的非常热的气体）与硅片的相互作用。等离子体切穿或蚀刻硅以产生结构;并且由等离子体产生的电场将高速离子嵌入硅中以改变硅的电阻。这个项目的重点是一个新的设备，创建离子束在这个制造过程中使用。这是西弗吉尼亚大学（WVU）和瓦里安半导体设备公司（应用材料公司的一个业务部门）的科学家之间的合作伙伴关系。使用WVU开发的诊断和工业加工工具，该团队将研究工具中离子束形成的过程，以改善纳米级计算和存储设备的三维加工。此外，该项目支持在协同结合基础和应用等离子体物理学的研究环境中培训研究生和本科生;提高获得物理学高级学位的妇女和少数民族的比例;通过参与尖端研究活动吸引高质量的本科生进入物理学;并支持STEM教育计划，该计划扩展到西弗吉尼亚州一半以上的县。虽然从孔鞘中提取离子是许多技术的关键部分，但在等离子体处理工具的紧凑几何形状中直接测量束特性是有问题的。本项目的目标是开发一个基本的理解的束流特性的应用材料新的离子注入工具上的关键控制参数和几何形状的束源的依赖。 这反过来将使得能够创建整个离子注入系统的经验证的预测模型。在这些研究中要解决的具体科学问题将解决长期存在的问题，从边界鞘层中提取离子束，从而推进离子束技术的最新发展。

This project will lead to developing a basic understanding of how to create beams of ions to be used to improve silicon wafer processing. The silicon chips at the heart of the modern age of electronics are comprised of millions to billions of very small manufactured structures. To function electronically, these structures have to have their ability to conduct electrons modified and they have to be physically constructed through a nanoscale machining process. Both of these processes rely on having plasmas (very hot gasses whose atoms have been broken up into positively charged ions and negatively charged electrons) interact with the silicon wafer. The plasmas cut through, or etch, the silicon to create the structures; and electric fields created by the plasma embed high speed ions into the silicon to change the electrical resistance of the silicon. This project focuses on a new device that creates beams of ions to be used in this manufacturing process. It is a partnership between scientists at West Virginia University (WVU) and Varian Semiconductor Equipment - a business unit of Applied Materials Corporation. Using diagnostics developed at WVU and an industrial processing tool, the team will investigate the process of ion beam formation in the tool in order to improve the three-dimensional processing of nanoscale computing and memory devices. In addition, this project supports the training of graduate and undergraduate students in a research environment that synergistically combines basic and applied plasma physics; improves the percentage of women and minorities obtaining advanced degrees in physics; attracts high quality undergraduates into physics through involvement in cutting-edge research activities; and supports a STEM education initiative that extends to over half the counties in West Virginia. While the extraction of ions from aperture sheaths is a key part of many technologies, the direct measurement of beam properties in the compact geometries of plasma processing tools is problematic. The goal of this project is to develop a fundamental understanding of the dependence of beam properties of Applied Materials new ion implantation tool on the key control parameters and geometry of the beam source. This, in turn, will enable creation of validated, predictive models of the entire ion implantation system. The specific scientific questions to be addressed in these studies will resolve long-standing questions concerning the extraction of ion beams from boundary sheaths and will thereby advance the state-of-the-art in ion beam technology.