GOALI: Optimization of Ion Beam Extraction - Enabling Technology for Advanced Semiconductor Fabrication

GOALI：离子束提取的优化 - 先进半导体制造的支持技术

• 批准号: 1617880
• 负责人: EARL SCIME
• 金额: $ 42.5万
• 依托单位: West Virginia University Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-09-15 至 2020-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1617880&HistoricalAwards=false
• 关键词: GOALI; Optimization; Ion; Beam; Extraction

This project will lead to developing a basic understanding of how to create beams of ions to be used to improve silicon wafer processing. The silicon chips at the heart of the modern age of electronics are comprised of millions to billions of very small manufactured structures. To function electronically, these structures have to have their ability to conduct electrons modified and they have to be physically constructed through a nanoscale machining process. Both of these processes rely on having plasmas (very hot gasses whose atoms have been broken up into positively charged ions and negatively charged electrons) interact with the silicon wafer. The plasmas cut through, or etch, the silicon to create the structures; and electric fields created by the plasma embed high speed ions into the silicon to change the electrical resistance of the silicon. This project focuses on a new device that creates beams of ions to be used in this manufacturing process. It is a partnership between scientists at West Virginia University (WVU) and Varian Semiconductor Equipment - a business unit of Applied Materials Corporation. Using diagnostics developed at WVU and an industrial processing tool, the team will investigate the process of ion beam formation in the tool in order to improve the three-dimensional processing of nanoscale computing and memory devices. In addition, this project supports the training of graduate and undergraduate students in a research environment that synergistically combines basic and applied plasma physics; improves the percentage of women and minorities obtaining advanced degrees in physics; attracts high quality undergraduates into physics through involvement in cutting-edge research activities; and supports a STEM education initiative that extends to over half the counties in West Virginia. While the extraction of ions from aperture sheaths is a key part of many technologies, the direct measurement of beam properties in the compact geometries of plasma processing tools is problematic. The goal of this project is to develop a fundamental understanding of the dependence of beam properties of Applied Materials new ion implantation tool on the key control parameters and geometry of the beam source. This, in turn, will enable creation of validated, predictive models of the entire ion implantation system. The specific scientific questions to be addressed in these studies will resolve long-standing questions concerning the extraction of ion beams from boundary sheaths and will thereby advance the state-of-the-art in ion beam technology.

该项目将导致人们对如何创建用于改进硅晶片加工的离子束有基本的了解。现代电子产品的核心硅芯片由数百万至数十亿个非常小的制造结构组成。为了实现电子功能，这些结构必须具有传导电子的能力，并且必须通过纳米级加工工艺进行物理构造。这两个过程都依赖于等离子体（非常热的气体，其原子已分解为带正电的离子和带负电的电子）与硅晶片的相互作用。等离子体切割或蚀刻硅以形成结构；等离子体产生的电场将高速离子嵌入硅中以改变硅的电阻。该项目重点关注一种新设备，该设备可产生用于该制造过程的离子束。这是西弗吉尼亚大学 (WVU) 的科学家与应用材料公司旗下业务部门瓦里安半导体设备公司之间的合作伙伴关系。利用西弗吉尼亚大学开发的诊断技术和工业处理工具，该团队将研究工具中离子束形成的过程，以改善纳米级计算和存储设备的三维处理。此外，该项目支持在基础和应用等离子体物理学协同结合的研究环境中对研究生和本科生进行培训；提高女性和少数族裔获得物理学高级学位的比例；通过参与前沿研究活动吸引高素质本科生进入物理学领域；并支持一项覆盖西弗吉尼亚州一半以上县的 STEM 教育计划。虽然从孔径鞘中提取离子是许多技术的关键部分，但在等离子体处理工具的紧凑几何形状中直接测量束特性是有问题的。该项目的目标是对应用材料公司新型离子注入工具的射束特性对射束源的关键控制参数和几何形状的依赖性有一个基本的了解。 反过来，这将能够创建整个离子注入系统的经过验证的预测模型。这些研究要解决的具体科学问题将解决有关从边界鞘提取离子束的长期存在的问题，从而推动离子束技术的发展。