SHF: CSR: Small: CAD for THz lateral SiGe HBT on SOI to address Amdahl's Law

现代微处理器面临着严峻的挑战。 他们最近的开发周期没有看到时钟速率的改善，他们的设计依赖于所谓的多核来产生增强的性能。 除了少数例外，许多常见应用程序的运行时间几乎没有改善，可能长达十年之久，证明了计算行业进步所基于的摩尔定律的失败。 由于其看似极端的速度，本项目探索了一种设备，它可能在合理的功率水平下在未来的多核计算中取得突破。这项研究的一个重要推广目标是提醒集成电路设计界（包括学生）使用这些新器件的可能性。这项研究的重点是试图让这些设计人员能够轻松地自行研究这种方法，从而可能产生广泛的社会影响。这项研究的技术目标是研究使用绝缘体上硅（SOI）工艺制造的横向硅锗（SiGe）异质结双极晶体管（HBT）。这项工作的动力来自初步研究，表明这些结构可以以超过1 THz的速度驱动容性负载（IC互连），并且功率低于当前和未来的FIN-FET CMOS器件。具体而言，该项目将开发用于横向/SOI各种高速SiGe异质结双极晶体管（HBT）的CAD工具。

Modern microprocessors face a serious challenge. Their recent development cycles have not seen clock rate improvement, and their designs have relied upon so called multiple cores to produce enhanced performance. With a few exceptions, there has been little improvement in run time for many common applications, perhaps for as long as a decade testifying the failure of Moore's Law, on which the progress of computing industry is based. Due to its seemingly extreme speed, the present project explores a device, which may have the potential for breakthroughs in future multiple core computation at reasonable power levels. One of the important outreach goals of the research is to alert the integrated circuit design community (including students) of what is possible using these novel devices. The proposed research is focused on trying to make it easy for such designers to investigate this approach on their own, thus potentially resulting in extensive societal impact.The technical goal of this proposal is to investigate the use of lateral Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) fabricated in a Silicon-on-Insulator (SOI) process. The impetus for this work comes from preliminary research demonstarting that these structures can drive capacitive loads (IC interconnect) at speeds exceeding 1 THz and with lower power than current and future FIN-FET CMOS devices. Specifically, the project will develop CAD tools for the lateral/SOI variety of high-speed SiGe heterojunction bipolar transistors (HBT).