EAGER: Fundamental studies of material synthesis and contact engineering in CVD MoS2

EAGER：CVD MoS2 材料合成和接触工程的基础研究

• 批准号: 1638598
• 负责人: Davood Shahrjerdi
• 金额: $ 15万
• 依托单位: New York University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-07-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1638598&HistoricalAwards=false
• 关键词: EAGER; Fundamental; studies; material; synthesis

AbstractNon-Technical:Materials and device innovations play crucial roles in maintaining the US leadership in semiconductor industry, which has important economic and societal implications. The proposed research will enable scientific advances in understanding the key factors limiting the performance of an emerging class of electronics materials that is two-dimensional molybdenum disulfide. These materials may find applications in next-generation wearable electronics, which has far reaching applications from health monitoring to security. For these materials to become commercially viable, it is necessary to develop large-area growth techniques. Therefore, there has been an increased research activity to produce device-quality molybdenum disulfide. However, the electronic properties of those materials still need significant improvements. TMD-based technology will be transformative in the development of advanced wearable devices. The broader impacts of this proposal also include training of students in important scientific areas and providing them with expertise in device physics, nanofabrication, and analysis methods. Technical :The overall goal of the proposed research is to enable an in-depth understanding of the interplay between the process parameters and the electrical characteristics of molybdenum disulfide materials and devices. We will systematically explore the origin of device performance degradation in molybdenum disulfide transistors due to the growth process and contacts using advanced material and device characterization techniques. Specifically, this research aims at advancing the field of two-dimensional materials toward their widespread deployment for large-area device applications by pursuing two research goals: (i) in-depth understanding of the effect of various growth parameters on the electronic properties of molybdenum disulfide, and (ii) systematic engineering of contacts in molybdenum disulfide devices to significantly enhance electron injection into the channel from the contacts.

摘要非技术：材料和器件创新在保持美国半导体产业的领导地位方面发挥着至关重要的作用，这具有重要的经济和社会意义。拟议的研究将推动科学进步，以了解限制二维二硫化钼这类新兴电子材料性能的关键因素。这些材料可能会在下一代可穿戴电子产品中得到应用，这些电子产品具有从健康监测到安全的广泛应用。为了使这些材料具有商业可行性，有必要开发大面积生长技术。因此，生产设备级二硫化钼的研究活动越来越多。然而，这些材料的电子性能仍然需要显著的改进。基于tmd的技术将在先进可穿戴设备的开发中具有变革性。该提案的广泛影响还包括在重要科学领域培训学生，并为他们提供器件物理，纳米制造和分析方法方面的专业知识。技术：提出的研究的总体目标是使深入了解工艺参数与二硫化钼材料和器件的电气特性之间的相互作用。我们将使用先进的材料和器件表征技术，系统地探索由于生长过程和接触导致的二硫化钼晶体管器件性能下降的根源。具体而言，本研究旨在通过追求两个研究目标来推进二维材料领域在大面积器件应用中的广泛部署：(i)深入了解各种生长参数对二硫化钼电子性能的影响，以及（ii）系统地设计二硫化钼器件中的触点，以显着增强从触点向通道中的电子注入。

项目成果

Material and device properties of superacid-treated monolayer molybdenum disulfide

• DOI: 10.1063/1.4974046
• 发表时间: 2017-01-16
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Alharbi, Abdullah;Zahl, Percy;Shahrjerdi, Davood
• 通讯作者: Shahrjerdi, Davood

Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS 2 Transistors

衬底耦合对单层MoS 2 晶体管性能和可变性的影响

• DOI: 10.1109/led.2018.2883808
• 发表时间: 2019
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: Alharbi, Abdullah;Huang, Zhujun;Taniguchi, Takashi;Watanabe, Kenji;Shahrjerdi, Davood
• 通讯作者: Shahrjerdi, Davood

Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition

• DOI: 10.1063/1.4967188
• 发表时间: 2016-11-07
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Alharbi, Abdullah;Shahrjerdi, Davood
• 通讯作者: Shahrjerdi, Davood