Studies of Ion-Exchange Process for Selective Placement of High-Density Carbon Nanotubes for Digital Logic Applications

用于数字逻辑应用的选择性放置高密度碳纳米管的离子交换过程研究

基本信息

  • 批准号:
    1728051
  • 负责人:
  • 金额:
    $ 29.2万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2017
  • 资助国家:
    美国
  • 起止时间:
    2017-10-01 至 2021-09-30
  • 项目状态:
    已结题

项目摘要

Nanomaterials offer tremendous prospects to revolutionize future electronic and photonic technologies. Despite enormous research efforts, assembling individual nanoscale building blocks into high-level functional assemblies and ultimately into systems remains a challenge. The hierarchical integration of nanomaterials is particularly important for applications that require precise placement of nanoscale building blocks with exceedingly high density. An important example of such hierarchical integration includes assembling carbon nanotubes on a large scale due to their tremendous potential for realizing next-generation computing systems that are high-speed and power-efficient. However, assembling nanotubes with high density in precise locations has been a major roadblock for enabling a viable nanotube-based technology. This award aims at bridging the scientific and technological gap by uncovering the fundamental surface science of a chemical assembly process that is used for selective placement of nanotubes. The project creates new research and educational opportunities for graduate and undergraduate students, specifically engaging students from underserved groups. The scientific and technological aspects of the project, along with the workforce training, will boost the efforts of the nation in maintaining global technological leadership. The goal of this research project is to study the fundamental surface science of selective placement of carbon nanotubes (CNTs) based on ion-exchange chemistry for device applications. This chemical assembly process involves electrostatic charge interactions at the nanoscale. Specifically, the charge interactions occur between negatively charged surfactant-wrapped CNTs dispersed in a solution and positively charged self-assembled molecules in nanoscale hafnium oxide (HfO2) trenches. Currently, the optimization of this ion-exchange chemistry is based on a series of trial and error experiments in which the CNT density is used as the only measurable metric. To understand the nature of these interactions, a new methodology that quantifies the Coulombic interactions at nanoscale is studied. To this end, a two-dimensional array of embedded 4-terminal silicon field-effect sensors with nanoscale silicon channels that allow quantifying small electronic charges are developed. The HfO2 trenches are then formed above these sensors to monitor the effect of different processing parameters on the kinetics of the chemical assembly. The project establishes a quantitative understanding of the kinetics of the ion-exchange process for selective placement of high-density CNTs. It also develops a new electrochemical camera based on a 2D array of the silicon sensors for recording the dynamics of the ion-exchange chemistry with high spatiotemporal resolution. This research paves the way for high-density integration of CNTs on silicon substrates for high-speed and power-efficient digital logic applications.
纳米材料为未来电子和光子技术的革命提供了巨大的前景。尽管付出了巨大的研究努力,将单个纳米级构建块组装成高级功能组件并最终组装成系统仍然是一个挑战。纳米材料的分层集成对于需要精确放置具有极高密度的纳米级构建块的应用尤为重要。这种分层集成的一个重要例子包括大规模组装碳纳米管,因为它们在实现高速和节能的下一代计算系统方面具有巨大的潜力。 然而,在精确位置组装高密度纳米管一直是实现可行的基于纳米管的技术的主要障碍。该奖项旨在通过揭示用于选择性放置纳米管的化学组装过程的基础表面科学来缩小科学和技术差距。 该项目为研究生和本科生创造了新的研究和教育机会,特别是吸引来自服务不足群体的学生。该项目的科技方面以及劳动力培训将推动国家保持全球技术领先地位。 该研究项目的目标是研究基于离子交换化学的设备应用选择性放置碳纳米管 (CNT) 的基础表面科学。这种化学组装过程涉及纳米级的静电荷相互作用。具体来说,电荷相互作用发生在分散在溶液中的带负电的表面活性剂包裹的碳纳米管和纳米级氧化铪(HfO2)沟槽中带正电的自组装分子之间。目前,这种离子交换化学的优化基于一系列反复试验,其中碳纳米管密度被用作唯一可测量的指标。为了了解这些相互作用的本质,研究了一种量化纳米尺度库仑相互作用的新方法。为此,开发了具有纳米级硅通道的嵌入式四端子硅场效应传感器的二维阵列,可以量化小电子电荷。然后在这些传感器上方形成 HfO2 沟槽,以监测不同处理参数对化学组装动力学的影响。该项目建立了对选择性放置高密度碳纳米管的离子交换过程动力学的定量理解。它还开发了一种基于硅传感器二维阵列的新型电化学相机,用于以高时空分辨率记录离子交换化学的动态。这项研究为在硅基板上高密度集成碳纳米管以实现高速、节能的数字逻辑应用铺平了道路。

项目成果

期刊论文数量(7)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETs
石墨烯/b-BN FET 中单个空位缺陷对 1/f 噪声的影响
  • DOI:
    10.1109/drc.2018.8442196
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Wu, Ting;Alharbi, Abdullah;Taniguchi, Takashi;Watanabe, Kenji;Shahrjerdi, Davood
  • 通讯作者:
    Shahrjerdi, Davood
An Electrochemical Biochip for Measuring Low Concentrations of Analytes With Adjustable Temporal Resolutions
  • DOI:
    10.1109/tbcas.2020.3009303
  • 发表时间:
    2020-07
  • 期刊:
  • 影响因子:
    5.1
  • 作者:
    Kae-Dyi You;Edoardo Cuniberto;Shao-Cheng Hsu;Bohan Wu;Zhujun Huang;Xiaochang Pei;D. Shahrjerdi
  • 通讯作者:
    Kae-Dyi You;Edoardo Cuniberto;Shao-Cheng Hsu;Bohan Wu;Zhujun Huang;Xiaochang Pei;D. Shahrjerdi
Nano-engineering the material structure of preferentially oriented nano-graphitic carbon for making high-performance electrochemical micro-sensors
  • DOI:
    10.1038/s41598-020-66408-9
  • 发表时间:
    2020-06-10
  • 期刊:
  • 影响因子:
    4.6
  • 作者:
    Cuniberto, Edoardo;Alharbi, Abdullah;Shahrjerdi, Davood
  • 通讯作者:
    Shahrjerdi, Davood
Hybrid CMOS-Graphene Sensor Array for Subsecond Dopamine Detection.
Versatile construction of van der Waals heterostructures using a dual-function polymeric film
  • DOI:
    10.1038/s41467-020-16817-1
  • 发表时间:
    2020-06-15
  • 期刊:
  • 影响因子:
    16.6
  • 作者:
    Huang, Zhujun;Alharbi, Abdullah;Shahrjerdi, Davood
  • 通讯作者:
    Shahrjerdi, Davood
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Davood Shahrjerdi其他文献

A Framework for Benchmarking Emerging FSCV Neurochemical Sensors
新兴 FSCV 神经化学传感器基准测试框架
  • DOI:
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Moeid Jamalzadeh;Edoardo Cuniberto;Davood Shahrjerdi
  • 通讯作者:
    Davood Shahrjerdi
Selective silicon nanoparticle growth on high-density arrays of silicon nitride
  • DOI:
    10.1016/j.jcrysgro.2007.08.024
  • 发表时间:
    2007-10-15
  • 期刊:
  • 影响因子:
  • 作者:
    Shawn S. Coffee;Davood Shahrjerdi;Sanjay K. Banerjee;John G. Ekerdt
  • 通讯作者:
    John G. Ekerdt

Davood Shahrjerdi的其他文献

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{{ truncateString('Davood Shahrjerdi', 18)}}的其他基金

Enabling Principles for Manufacturing van der Waals Heterostructures with Clean Interfaces
制造具有干净界面的范德华异质结构的启用原则
  • 批准号:
    2224139
  • 财政年份:
    2022
  • 资助金额:
    $ 29.2万
  • 项目类别:
    Standard Grant
EAGER: Experimental studies of electrical double-layer capacitance of graphene using van der Waals heterostructures
EAGER:利用范德华异质结构对石墨烯双电层电容进行实验研究
  • 批准号:
    1940764
  • 财政年份:
    2019
  • 资助金额:
    $ 29.2万
  • 项目类别:
    Standard Grant
EAGER: Fundamental studies of material synthesis and contact engineering in CVD MoS2
EAGER:CVD MoS2 材料合成和接触工程的基础研究
  • 批准号:
    1638598
  • 财政年份:
    2016
  • 资助金额:
    $ 29.2万
  • 项目类别:
    Standard Grant

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Ion Torrent多基因平行测序技术筛选及鉴定肺腺癌主要的EGFR-TKI耐药驱动变异基因
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    2013
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In situ diffraction studies of ion exchange in zeolites
沸石中离子交换的原位衍射研究
  • 批准号:
    2103095
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    2018
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Ion exchange without Chemical Regeneration: Raman Spectroscopy Studies of Hexacyanoferrate Derivatized Electrodes
无化学再生的离子交换:六氰基铁酸盐衍生电极的拉曼光谱研究
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    9729046
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    1997
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单离子交换珠中离子染料扩散的显微光谱研究。
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Studies in Idealized Systems: 1) Statistical Mechanics and Kinetics of Cooperative Systems; 2) Neglected Problems of Transport in Ion Exchange Membranes (Chemistry)
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