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CAREER: Cubic Phase Green Light Emitting Diodes for Advanced Solid State Lighting

事业：用于先进固态照明的立方相绿光发光二极管

基本信息

批准号：
1652871
负责人：
Can Bayram
金额：
$ 50万
依托单位：
University of Illinois at Urbana-Champaign
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2017
资助国家：
美国
起止时间：
2017-02-01 至 2022-01-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1652871&HistoricalAwards=false
关键词：
CAREER Cubic Phase Green Light

项目摘要

Abstract Title: Investigation of Cubic Phase Green Light Emitting Diodes for Advanced Solid State LightingNon-Technical Description: The research objective of this proposal is to explore the fundamental properties of cubic phase light emitting diodes that will provide the critical knowledge required to close the "green gap" in the visible spectrum paving the way towards advanced solid state lighting and bridging efficient lighting, reliable connectivity, and fast networking via color mixing approach. The proposed research is expected to have significant societal and technological impact. This research will establish a new paradigm in creating green light emitting diodes by exploiting the hexagonal-to-cubic phase transition and an inexpensive, scalable silicon platform. The resulting cubic phase GaN framework will have many ramifications that may impact other micro-/nano- electro-photonic systems in energy, communication, and healthcare. The proposal plans to combine technical and educational platforms, including K-12 Science, Technology, Engineering and Math education efforts, for increasing the economic competitiveness of the United States. The principal investigator will develop a theme-based interactive outreach program, "Solid State Lighting", and will pilot curriculum materials at local middle schools with high ( 50%) minority enrollment. Another key component will be the creation of a portable exhibit to enlighten K-12 students and the general public about light and photonics. All of these materials will also be made available online for broad distribution. Additionally, modules incorporating the findings of the proposed research will be included in undergraduate and graduate courses (~80 students annually). Furthermore, the principal investigator will continue to host one K-12 teacher and one woman or underrepresented minority student in the research group every summer.Technical Description:To date, InGaN-based green light emitting diode research has been restricted to naturally-occurring hexagonal phase devices that are limited in power, efficiency, speed, and bandwidth. This problem fueled the research for the development of cubic phase GaN. Cubic phase green light emitting diodes reduce the necessary indium content by ~10% because of a 0.2 eV lower bandgap. Also, they can quadruple radiative recombination dynamics by virtue of their zero polarization. The intellectual merit of this proposal stems from the analysis of GaN devices integrated on nano-patterned Complementary Metal-Oxide Semiconductor-compatible silicon that will shed light on the properties of cubic phase green light emitting diodes and provide transformational, new knowledge in their heterointegration. Specifically, the structural mechanisms governing cubic phase material formation will be studied through a series of experimental characterization techniques aimed at identifying critical substrate-nano-pattern designs maximizing the cubic phase content. Concurrently, the radiative recombination dynamics of these (In)GaN photonic structures will be investigated and their structure-recombination relations correlated. These findings will be quantitatively evaluated in terms of defectivity (± 108 cm-2), phase content (± 0.1%), stress (± 0.01%), alloy content (± 0.01%), crystallographic alignment, bandgap and emission energy (± 1 meV), vibrational energy (± 2 cm-1), recombination dynamics (± 1 ps), and spatial uniformity ( 1.5 nm). The results will also be exploited to improve the radiative recombination dynamics of green light emitting diodes to revolutionize GaN-based photonic device design strategies. The proposed research will be carried out on Complementary Metal-Oxide Semiconductor-compatible silicon substrates to facilitate scalability, industrial adoption, and generate new knowledge on GaN-Silicon heterointegration. The knowledge acquired will help develop new photonic device designs and facilitate a fuller understanding of advanced solid state lighting.

摘要标题：用于先进固态照明的立方相绿色发光二极管的研究非技术描述：本提案的研究目标是探索立方相发光二极管的基本特性，这将提供缩小可见光谱中“绿色间隙”所需的关键知识，为先进固态照明和通过混色方法桥接高效照明、可靠连接和快速网络铺平道路。拟议的研究预计将产生重大的社会和技术影响。这项研究将通过利用六方到立方相变和廉价、可扩展的硅平台，建立创建绿色发光二极管的新范例。由此产生的立方相 GaN 框架将产生许多影响，可能会影响能源、通信和医疗保健领域的其他微/纳米电光子系统。该提案计划将技术和教育平台结合起来，包括 K-12 科学、技术、工程和数学教育工作，以提高美国的经济竞争力。首席研究员将开发一个基于主题的互动外展计划“固态照明”，并将在少数族裔入学率较高（50%）的当地中学试行课程材料。另一个关键部分是创建一个便携式展览，以启发 K-12 学生和公众对光和光子学的了解。所有这些材料也将在网上提供以供广泛分发。此外，包含拟议研究结果的模块将包含在本科生和研究生课程中（每年约 80 名学生）。此外，每年夏天，首席研究员将继续在研究小组中接待一名 K-12 教师和一名女性或代表性不足的少数族裔学生。技术描述：迄今为止，InGaN 基绿色发光二极管的研究仅限于天然存在的六方相器件，这些器件在功率、效率、速度和带宽方面都受到限制。这个问题推动了立方相GaN的开发研究。由于带隙降低了 0.2 eV，立方相绿色发光二极管将所需的铟含量减少了约 10%。此外，它们还可以凭借其零极化而使辐射复合动力学增加四倍。该提案的智力价值源于对集成在纳米图案互补金属氧化物半导体兼容硅上的 GaN 器件的分析，这将揭示立方相绿色发光二极管的特性，并提供异质集成方面的变革性新知识。具体来说，将通过一系列实验表征技术来研究控制立方相材料形成的结构机制，旨在确定最大化立方相含量的关键基板纳米图案设计。同时，还将研究这些 (In)GaN 光子结构的辐射复合动力学及其相关的结构复合关系。这些发现将根据缺陷率 (± 108 cm-2)、相含量 (± 0.1%)、应力 (± 0.01%)、合金含量 (± 0.01%)、晶体排列、带隙和发射能量 (± 1 meV)、振动能量 (± 2 cm-1)、复合动力学 (± 1 ps) 和空间均匀性 (± 1.5) 进行定量评估纳米）。研究结果还将用于改善绿光发光二极管的辐射复合动力学，从而彻底改变基于 GaN 的光子器件设计策略。拟议的研究将在互补金属氧化物半导体兼容的硅衬底上进行，以促进可扩展性、工业采用，并产生有关 GaN-硅异质集成的新知识。获得的知识将有助于开发新的光子器件设计，并促进对先进固态照明的更全面的了解。