Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructures

已经使用金属有机气相外延或分子束外延实现了包括GaN、InN、AlN和相关合金的III族氮化物半导体的高立方相纯度膜及其异质结构。它们的基本物理性质，如相纯度，缺陷性质，发光和导电已澄清的生长条件的关系。特别是，YSZ（001）衬底的立方氮化铟和InGaN薄膜的有用性，通过Si掺杂立方GaN和AlGaN薄膜的导电性控制，和立方AlN的带隙值建立。

High cubic phase purity films and their hetero-structures of III-nitride semiconductors including GaN, InN, AlN and related alloys have been realized using metalorganic vapor phase epitaxy or molecular beam epitaxy. Their basic physical properties such as phase purity, defect nature, luminescence and electrical conduction have been clarified in relation with the growth conditions. In particular, the usefulness of YSZ(001) substrates for cubic InN and InGaN films, conductivity control by Si doping to cubic GaN and AlGaN films, and the bandgap value for cubic AlN are established.