CAREER: Transforming Electronic Devices Using Two-dimensional Materials and Ferroelectric Metal Oxides

摘要：非技术描述：下一代信息技术正在推动对高能效电子设备的追求，以实时、低能耗和低成本的方式处理前所未有的海量数据。在这项计划中，首席研究员(PI)计划创造和评估基于新的混合材料平台的新型节能电子设备，该平台由二维(2D)材料(单/双硫属化合物和石墨烯)和铁电金属氧化物(掺杂Hf和Zo氧化物)组成。铁电金属氧化物在2D材料中提供可编程和非易失性掺杂，而在2D材料中原子薄体允许铁电金属氧化物对沟道进行强大的静电控制。以往对2D/铁电杂化材料的研究大多集中在传统的钙钛矿型铁电材料上。这项工作将首次系统地研究新发现的铁电Hf和Ziro氧化物的2D材料，这些材料具有良好的可扩展性、高的矫直场和与互补金属氧化物半导体(CMOS)技术完全兼容的优点。PI的团队将研究这种新的混合材料平台的合成，并基于这些材料创造超低功耗逻辑、存储器和模拟设备。基于这些材料的低功耗逻辑和存储设备将对移动设备、医疗植入性设备、可穿戴电子设备和大型数据中心至关重要。基于这些材料的模拟分类器将使高速和低功率信号处理和图像识别系统成为可能。将这些低功耗2D铁电器件与高速硅电路进行3D集成，将产生下一代高度并行和超低功耗的系统，以支持物联网和社交媒体等“大数据”应用。该研究所将通过开设新的2D材料研究生/本科生课程，将研究和教学结合在一起，以培训纳米电子领域的下一代劳动力。国际和平协会将建立几项外展活动，包括为小学生设立新的“小爱因斯坦”科学教育计划，从小培养年轻人尊重和拥抱科学技术事业的思想。该研究所还将为中学女生设立“Girls Go Tech”计划，以促进理工科女生的入学。技术说明：拟议研究的目标是为一个新的研究方向奠定基础：基于2D/铁电金属氧化物杂化材料平台的纳米电子学。PI的团队将合成和表征2D/铁电金属氧化物堆栈，寻求对以2D材料作为衬底/盖层的金属氧化物中铁电相变的基本了解。该团队还将利用这些材料来创造高能效的逻辑、内存和模拟设备。具体地说，该团队将创造和评估新型的2D铁电隧道场效应管(2D Fe-TFET)作为超低功耗逻辑；将研究2D铁电氧化铟晶体管(2D FHOT)，以实现高效、可扩展、耐用的铁电随机存取存储器(FRAM)；将创造嵌入式栅极石墨烯铁电晶体管(EGGFT)，以实现高能效、超紧凑、非易失性的模拟分类器。然后将这些器件逐层堆叠，实现3D单片集成。这项研究将阐明器件物理，并评估这些器件在未来半导体技术中的潜力。由此产生的3D集成系统将为新的电路和架构设计提供硬件基础。这项研究具有潜在的变革性，因为它可能在节能设备、电路和架构方面开启新的研发路线，具有从可穿戴电子设备、植入式医疗设备到数据中心的广泛新兴应用。

Abstract:Nontechnical description: Next generation information technology is driving the quest for energy efficient electronic devices to process unprecedented amounts of data in real time and in an energy- and cost-efficient manner. In this program, the principle investigator (PI) is planning to create and evaluate novel energy efficient electronic devices based on a new hybrid material platform consisting of two-dimensional (2D) materials (mono-/di-chalcogenides and graphene) and ferroelectric metal oxides (doped hafnium and zirconium oxides). The ferroelectric metal oxides provide programmable and non-volatile doping in 2D materials, while the atomically thin bodies in 2D materials enable strong electrostatic control over the channel by the ferroelectric metal oxides. Most previous research on 2D/ferroelectric hybrid materials has focused on traditional perovskite ferroelectric materials. This proposed work will undertake the first systematic study of 2D materials on newly discovered ferroelectric hafnium and zirconium oxides, which have the advantages of excellent scalability, high coercive field, and full compatibility with complementary metal oxide semiconductor (CMOS) technology. The PI's team will investigate the synthesis of this new hybrid material platform and create ultra-low power logic, memory, and analog devices based on these materials. The low power logic and memory devices based on these materials will be essential for mobile devices, medical implantable devices, wearable electronics, and large data centers. Analog classifiers based on these materials will enable high speed and low power signal processing and image recognition systems. 3D integration of these low power 2D ferroelectric devices with high speed silicon circuits will result in next-generation highly parallel and ultra-low power systems to support "Big Data" applications such as the Internet of Things and social media. The PI will integrate research and teaching by creating a new graduate/undergraduate course on 2D materials to train the next generation workforce in nanoelectronics. The PI will establish several outreach activities including a new "Little Einstein" science education program for elementary students to cultivate young minds at an early age to respect and embrace a career in science and technology. The PI will also establish a "Girls Go Tech" program for middle school girls to promote enrollment of female students in science and engineering programs.Technical description:The objective of the proposed research is to establish the foundation for a new research direction: nanoelectronics based on 2D/ferroelectric metal oxides hybrid material platform. The PI's team will synthesize and characterize 2D/ferroelectric metal oxide stacks, seeking fundamental understanding of the ferroelectric phase transition in metal oxides with 2D materials as substrate/capping layers. The team will also utilize these materials to create energy efficient logic, memory, and analog devices. Specifically, the team will create and evaluate novel 2D ferroelectric tunneling field effect transistors (2D Fe-TFETs) to serve as ultra-low power logic; will investigate 2D ferroelectric hafnium oxide transistors (2D FHOT) to implement highly energy efficient, scalable, and durable ferroelectric random access memory (FRAM); will create embedded-gate graphene ferroelectric transistors (EGGFTs) to realize highly energy-efficient, extremely compact, and non-volatile analog classifiers. These devices will then be stacked layer-by-layer to realize 3D monolithic integration. This research will elucidate the device physics and evaluate the potential of these devices for future semiconductor technology. The resulting 3D integrated system will provide the hardware foundation for new circuit and architecture designs. This research is potentially transformative as it may unlock new lines of research and development in energy efficient devices, circuits, and architectures with a broad range of emerging applications from wearable electronics and implantable medical devices to data centers.