CAREER: Harnessing Tunable Properties of Black Phosphorus for Novel Electronic Device Application

半导体电子技术在使许多电子系统能够用于从计算机到智能手机的计算和通信应用中起着关键作用。新半导体材料的研究和新电子器件概念的创新对于发展下一代计算和通信技术具有根本的重要性。该计划的研究活动旨在开发基于新兴半导体材料黑磷和相关二维材料的电子技术基础，这可以使许多变革性技术领域受益，利用低功耗，可重构和自适应电子系统。该项目将为研究黑磷的基本电子特性和探索用于计算和通信的新设备功能开发关键知识库。此外，该计划还将提供宝贵的研究机会，通过让研究生以及本科生和高中生接触大学研究机构和工业合作者的广泛研究机会，为半导体行业培训下一代劳动力。该项目还将促进妇女和代表性不足的学生参与半导体电子研究。科学成果将通过专门用于教育和研究的科学界网站（如nanoHUB）进行传播，与一般科学界分享研究成果，并将其用于教育用途。最近重新发现的黑磷显示出在电子应用方面的巨大潜力。凭借其可调的能隙，以及由其适度的带隙（体积为0.3 eV）产生的强双极导电，该材料为探索电子应用的新半导体器件概念提供了有吸引力的功能。另一方面，尽管黑磷材料具有很好的潜力，但将早期的黑磷材料科学转化为先进的器件技术仍然存在重大挑战。黑磷材料所特有的新器件概念及其制造技术在很大程度上仍处于开发阶段。基于黑磷的设备的实验演示和设计创新可能会导致新的功能，特别是其操作特性的可重新配置性，仍然很少。这个职业计划的目标是揭示黑磷的可调电子特性，如其带隙和双极传导的静电调谐，并建立用于电子应用的变革性设备。拟议的研究方案包括以下活动：（1）利用电子和光学表征技术来评估黑磷中的带隙调谐和载流子输运性质，（2）设计新颖的器件概念，利用黑磷中的可调谐性质，例如双极传导，以及（3）用当前技术水平对黑磷器件性能进行基准测试，并评估这些器件可以实现的新功能;（4）发展理论器件模型，以预测和指导基础器件物理研究。

The semiconductor electronics technology plays a critical role in enabling many electronic systems for computation and communication applications from computers to smart phones. The study of new semiconductor materials and the innovation of new electronic device concepts are of fundamental importance in developing the future generation computation and communications technology. The research activities in this program aim to develop the foundation of the electronics technology based on the emerging semiconductor material black phosphorus and related two-dimensional materials, which can benefit many transformative technological fields utilizing low power, reconfigurable and adaptive electronic systems. This project will develop a critical knowledge base for the study of the fundamental electronic properties of black phosphorus and the exploration of novel device functionalities for applications in computation and communications. Furthermore, the program will also offer valuable research opportunities for training the next generation workforce for the semiconductor industry by exposing graduate students, as well as undergraduate and high school students, to a wide range of research opportunities with both the university research facilities and the industrial collaborator. This project will also enhance the participation of woman and underrepresented students in semiconductor electronics research. The scientific results will be disseminated through the use of scientific community website dedicated to education and research, such as nanoHUB, to share the research outcomes with the general scientific community and made them available for educational use.Recently rediscovered black phosphorus has shown promising potential for electronic applications. With its tunable energy gap, as well as strong ambipolar conduction resulting from its moderate bandgap (0.3 eV in bulk), the material offers attractive features for exploring new semiconductor device concept for electronics application. On the other hand, despite of promising potentials, major challenges exist on translating early science of black phosphorus materials into advanced device technologies. Novel device concepts unique to black phosphorus materials, as well as their fabrication technology, remain largely under-developed. Experimental demonstrations and design innovations of devices based on black phosphorus that may lead to novel functionalities, especially with re-configurability in its operational characteristics, remain rare. The objective of this CAREER program is to reveal the tunable electronic properties of black phosphorus such as electrostatic tuning of its bandgap and ambipolar conduction, and to build transformative devices for applications in electronics. The proposed research program includes the following activities: (1) utilize electronic and optical characterization techniques to evaluate bandgap tuning and carrier transport properties in black phosphorus, (2) devise novel device concepts, leveraging tunable properties in black phosphorus, such as the ambipolar conduction, and (3) benchmark black phosphorus device performance with the current state-of-the-art, and evaluate the new functionalities these devices can enable, (4) develop theoretical device models to predict and guide basic device physics research.