Terahertz emission from plasma waves in GaN field effect transistors

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This project aims to develop semiconductor ultrahigh-frequency radiation sources by employing a plasma-wave generation mechanism. The targeted frequency range is the THz regime from 0.3 THz up to several THz. A series of experiments in the literature has recently provided the proof that the excitation of plasma waves in the two-dimensional electron gas of field-effect transistors allows to extend the operation range of semiconductor electronic elements as high-frequency radiation sources to frequencies which well exceed the classical cut-off frequency of the transistors. In this project we target the enhancement of the power generated by and radiated from plasma oscillations. This is to be achieved by three means, the improved control of the abruptness of the carrier density profile, the optimization of integrated antennas, and by sub-harmonic injection. The latter aims also at synchronization of several transistors (emitters) for power-combining. The measures for performance enhancement will be accompanied by a detailed theoretical analysis of the conditions for efficient plasma-wave generation.