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Collaborative research: Compact room temperature operated THz emitters with scalable architecture and low electric power consumption

Collaborative research: Compact room temperature operated THz emitters with scalable architecture and low electric power consumption
合作研究:具有可扩展架构和低功耗的紧凑型室温操作太赫兹发射器
批准号:
1707317
负责人:
Leon Shterengas
金额:
$30.6万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-07-15 至 2021-05-31

项目摘要

项目成果

Leon Shterengas的其他基金

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中文摘要
翻译
标题:用于工业、医疗和家庭安全应用的紧凑、高效的室温操作太赫兹发射器。非技术:太赫兹传感是一种使能技术,用于生物和化学危险剂的非侵入性检测,癌症检测,地雷和爆炸物检测,建筑物,机场和其他公共空间的安全筛查,以及在大气太赫兹传输窗口中的短距离秘密通信。目前可用的太赫兹源要么体积庞大,要么需要低温冷却,从而导致高成本、高复杂性和低可靠性。提出的新设计概念旨在解决当前最先进的太赫兹发射器技术的大多数缺陷。目标器件的实现将在复杂性、可靠性和尺寸方面与广泛使用的标准廉价近红外二极管激光器相似。这项工作的成功将使太赫兹成像和光谱传感器在安全检查、医疗诊断和工业监控应用中的广泛部署成为可能。该项目需要理论和实验之间的紧密联系,包括广泛的建模,设备制造方法的优化以及新型激光发射器的详细表征和现场测试。这项研究工作与教育和推广计划相结合,旨在提高纽约和德克萨斯州公立大学和当地社区的教育机会。技术:该项目的主要目标是开发具有内置谐振非线性的高功率二极管激光器,用于在太赫兹光谱范围内有效地产生腔内差频。基于非对称耦合量子阱的增益部分利用了锑化物材料系统中可以实现的独特能带对准。在2微米附近的两个紧密间隔的波长处产生的激光模式将作为腔内泵浦场产生差频。在该光谱区域发射的基于锑的二极管激光器显示出半导体激光器有史以来最低的阈值电流密度,出色的温度稳定性和瓦级输出功率,所有这些都在室温下实现。所提出的以微到毫瓦太赫兹输出水平运行的设备所需的预期电力输入将比现有技术低两到三个数量级。提出的研究提供了从非简并到高度简并的大范围载流子种群中基于锑的量子阱系统共振光学非线性的基本问题的实验和理论研究。所提出的设备的未来发展将包括制造广泛可调谐的太赫兹发射器以及与硅光子学的集成。将该技术转移到砷化或硅平台将使太赫兹发射器的大面积阵列的外延侧向下安装,将输出太赫兹功率扩大到数十毫瓦水平,并执行太赫兹波束整形。
英文摘要
Abstract Title: Compact and efficient room temperature operated terahertz emitters for industrial, medical and home security applications.Nontechnical:Terahertz sensing is an enabling technology for noninvasive detection of biological and chemical hazardous agents, cancer detection, detection of mines and explosives, security screening in buildings, airports, and other public space, as well as short-range covert communications in terahertz transmission windows of the atmosphere. Currently available terahertz sources are either bulky or require cryogenic cooling leading to high costs, high complexity, and often low reliability. The proposed novel design concept aims to address most of the deficiencies of the current state-of-the-art terahertz emitter technology. The target device implementation will be similar in terms of the complexity, reliability and size to widely used standard inexpensive near infrared diode lasers. The success of the proposed effort will enable wide deployment of terahertz imaging and spectroscopic sensors for the security screening, medical diagnostics, and industrial monitoring applications. The project requires strongly correlated effort between theory and experiment including extensive modeling, optimization of the device fabrication methodologies as well as detailed characterization and field testing of the novel laser emitters. The research effort is integrated with educational and outreach plans aimed at enhancing education opportunities at the New York and Texas public universities and local communities. Technical:The main goal of the project is the development of high-power diode lasers with built-in resonant nonlinearity for efficient intra-cavity difference frequency generation in the terahertz spectral range. The gain sections based on asymmetric coupled quantum wells utilize the unique band alignment that can be realized in an antimonide material system. Laser modes generated at two closely spaced wavelengths near 2 microns will serve as an intracavity pump field for difference frequency generation. The antimonide-based diode lasers emitting in that spectral region demonstrate some of the lowest threshold current densities ever achieved for semiconductor lasers, excellent temperature stability, and watt level output power, all at room temperature. The expected electrical power input necessary for the proposed device operation with micro to milliwatt terahertz output level will be two to three orders of magnitude lower than those of existing technologies. The proposed research offers experimental and theoretical studies of the fundamental problem of resonant optical nonlinearities in antimonide-based quantum-well systems in a wide range of carrier populations from nondegenerate to highly degenerate. The future development of the proposed devices will include fabrication of widely tunable terahertz emitters as well as integration with silicon photonics. Transfer of the technology to the arsenide or silicon platform will enable epi-side down mounting of large area arrays of the terahertz emitters to scale up the output terahertz power to tens of milliwatt level and perform terahertz beam shaping.
期刊论文(8)
专著(0)
科研奖励(0)
会议论文
GaSb-based diode lasers with asymmetric coupled quantum wells
具有不对称耦合量子阱的 GaSb 基二极管激光器
DOI: 10.1063/1.5046426
发表时间: 2018
期刊: Applied Physics Letters
影响因子: 4
作者: [Jiang, Jiang, Shterengas, Leon, Hosoda, Takashi, Belyanin, Alexei, Kipshidze, Gela, Belenky, Gregory]
通讯作者: Belenky, Gregory
Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μ m
2.1 μ m 附近 GaSb 基 Y 分支分布式布拉格反射激光器的双波长操作
DOI: 10.1088/1361-6641/ab63bc
发表时间: 2020
期刊: Semiconductor Science and Technology
影响因子: 1.9
作者: [Jiang, J, Shterengas, L, Hosoda, T, Stein, A, Belyanin, A, Kipshidze, G, Belenky, G]
通讯作者: Belenky, G
Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm
双波长 Y 分支 DBR 激光器,具有 100 mW 连续功率,接近 2 μm
DOI: 10.1109/lpt.2020.3009663
发表时间: 2020
期刊: IEEE Photonics Technology Letters
影响因子: 2.6
作者: [Jiang, Jiang, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, Belyanin, Alexey, Belenky, Gregory]
通讯作者: Belenky, Gregory
Dual-wavelength operation of GaSb-based diode lasers with asymmetric coupled quantum wells
具有不对称耦合量子阱的 GaSb 基二极管激光器的双波长操作
DOI: 10.1364/cleo_si.2019.sm3n.7
发表时间: 2019
期刊: OSA Technical Digest
影响因子: --
作者: [Jiang, Jiang, Shterengas, Leon, Hosoda, Takashi, Stein, Aaron, Belyanin, Alexey, Kipshidze, Gela, Belenky, Gregory]
通讯作者: Belenky, Gregory
7
    GOALI: Widely Tunable Gasb-Based Diode Lasers for Spectroscopy
    • 批准号:
      1408126
    • 项目类别:
      Standard Grant
    • 资助金额:
      $40.93万
    • 财政年份:
      2014
    • 负责人:
      Leon Shterengas
    • 依托单位:
    国内基金
    海外基金
    Research on Quantum Field Theory without a Lagrangian Description
    • 批准号:
      24ZR1403900
    • 项目类别:
      省市级项目
    • 资助金额:
      --
    • 批准年份:
      2024
    • 负责人:
      SATOSHI NAWATA
    • 依托单位:
    HIF-1α调控软骨细胞衰老在骨关节炎进展中的作用及机制研究
    • 批准号:
      82371603
    • 项目类别:
      面上项目
    • 资助金额:
      49.00万元
    • 批准年份:
      2023
    • 负责人:
      陈晓
    • 依托单位:
    超声驱动压电效应激活门控离子通道促眼眶膜内成骨的作用及机制研究
    • 批准号:
      82371103
    • 项目类别:
      面上项目
    • 资助金额:
      49.00万元
    • 批准年份:
      2023
    • 负责人:
      阮静
    • 依托单位:
    Lienard系统的不变代数曲线、可积性与极限环问题研究
    • 批准号:
      12301200
    • 项目类别:
      青年科学基金项目
    • 资助金额:
      30.00万元
    • 批准年份:
      2023
    • 负责人:
      钱欣洁
    • 依托单位: