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GOALI: Widely Tunable Gasb-Based Diode Lasers for Spectroscopy

GOALI: Widely Tunable Gasb-Based Diode Lasers for Spectroscopy
GOALI:用于光谱学的宽范围可调谐 Gasb 二极管激光器
批准号:
1408126
负责人:
Leon Shterengas
金额:
$40.93万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-08-15 至 2018-07-31

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中文摘要
翻译
目标:用于光谱学的广泛可调谐 GaSb 基二极管激光器 该项目的目标是满足当前光谱应用对紧凑型高效中红外激光源的工业需求。将设计和开发具有超宽增益光谱的衍射受限 GaSb 二极管激光器,适合直接集成到由 DayLight Solutions 的工业合作者开发的外腔最先进的光谱系统中。拟议的设备应用包括:炼油厂和管道附近的气体泄漏监测、地下煤矿内部的甲烷控制等。新设备可用于研究大气中的化学和辐射传输过程、控制温室气体、研究海洋环境和行星研究。正如工业合作伙伴所设想的那样,用于光谱应用的可调谐激光源具有巨大的商业兴趣。新型激光器将用于开发商业产品的原型。所制造的器件的测试将在石溪大学学生的参与下进行。这项工作将涉及设计一种新型二极管激光器,该激光器具有三层量子阱有源区和工程子带结构。室温下在 3.1 至 3.4 微米光谱范围内发射的器件将被发送给工业合作者进行芯片贴装测试。安装的设备将通过光学测量进行广泛的表征。将制造并表征基于具有宽光学增益谱的三层量子阱的有源区具有不同异质结构设计的二极管激光器。将利用级联泵浦来最小化阈值电流,以实现 3 至 4 µm 光谱区域的室温操作。拟议的工作将包括设计和开发针对锑基异质结构优化的超低反射光学涂层。基于 GaSb 的二极管激光技术将可用于家庭安全和商业领域的光谱应用。
英文摘要
GOALI: Widely Tunable GaSb-based Diode Lasers for SpectroscopyThe objective of this program is to address the current industrial need for compact efficient mid-infrared laser sources for spectroscopic applications. Diffraction limited GaSb-based diode lasers with extra-broad gain spectra suitable for direct integration into external cavity state-of-the-art spectroscopic systems developed by industrial collaborators at DayLight Solutions will be designed and developed. The proposed device applications include: gas leak monitoring in refineries and near the pipe lines, methane control inside underground coal mines and others. The new devices can be used for studies of chemical and radiation transfer processes in atmosphere, control of greenhouse gasses, for studies of marine environments and planetary research. There is significant commercial interest in tunable laser sources for spectroscopic applications as envisioned by industrial partner. Novel lasers will be utilized for development of the prototypes of the commercial products. The testing of the fabricated devices will be performed with participation of Stony Brook University students.This work will involve the design of a novel type of diode lasers with triple layer quantum well active region with engineered subband structure. Devices emitting in spectral region from 3.1 to 3.4 microns at room temperature will be sent to the industrial collaborator to perform die-attach tests. The mounted devices will be extensively characterized via optical measurements. Diode lasers with different heterostructure designs for the active region based on triple layer quantum wells having wide optical gain spectra will be fabricated and characterized. Cascade pumping will be utilized to minimize threshold current to achieve room temperature operation in the spectral region from 3 to 4 µm. The proposed efforts will include the design and development of ultra-low-reflection optical coatings optimized for antimonide-based heterostructures. The GaSb-based diode laser technology will be available for spectroscopic applications in home security and commercial sectors.
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Collaborative research: Compact room temperature operated THz emitters with scalable architecture and low electric power consumption
  • 批准号:
    1707317
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.6万
  • 财政年份:
    2017
  • 负责人:
    Leon Shterengas
  • 依托单位:
海外基金