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GOALI: Widely Tunable Gasb-Based Diode Lasers for Spectroscopy

GOALI: Widely Tunable Gasb-Based Diode Lasers for Spectroscopy
GOALI:用于光谱学的宽范围可调谐 Gasb 二极管激光器
批准号:
1408126
负责人:
Leon Shterengas
金额:
$40.93万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-08-15 至 2018-07-31

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中文摘要
翻译
目标:光谱学用宽调谐砷化镓基二极管激光器该计划的目标是解决目前工业上对光谱学应用的紧凑型高效中红外激光源的需求。将设计和开发具有超宽增益光谱的衍射受限的基于GaAs的二极管激光器,该激光器适合直接集成到由DayLight Solutions的工业合作者开发的外腔最先进的光谱系统中。建议的装置应用包括:炼油厂和管道附近的气体泄漏监测,地下煤矿内的甲烷控制等。新装置可用于大气中化学和辐射传输过程的研究,温室气体的控制,海洋环境研究和行星研究。如工业合作伙伴所设想的,可调谐激光源用于光谱应用具有显著的商业利益。新型激光器将用于商业产品原型的开发。斯托尼布鲁克大学的学生将参与对所制造的器件进行测试。这项工作将涉及设计一种新型的具有三层量子阱有源区的二极管激光器,该有源区具有工程子带结构。室温下在3.1至3.4微米光谱范围内发射的器件将被发送到工业合作者进行芯片连接测试。将通过光学测量对安装的器械进行广泛表征。基于具有宽光增益谱的三层量子威尔斯阱的有源区具有不同异质结构设计的二极管激光器将被制造和表征。级联泵浦将用于最小化阈值电流,以实现3至4 µm光谱区域的室温操作。拟议的努力将包括设计和开发超低反射光学涂层优化锑化物基异质结构。基于砷化镓的二极管激光器技术将可用于家庭安全和商业领域的光谱应用。
英文摘要
GOALI: Widely Tunable GaSb-based Diode Lasers for SpectroscopyThe objective of this program is to address the current industrial need for compact efficient mid-infrared laser sources for spectroscopic applications. Diffraction limited GaSb-based diode lasers with extra-broad gain spectra suitable for direct integration into external cavity state-of-the-art spectroscopic systems developed by industrial collaborators at DayLight Solutions will be designed and developed. The proposed device applications include: gas leak monitoring in refineries and near the pipe lines, methane control inside underground coal mines and others. The new devices can be used for studies of chemical and radiation transfer processes in atmosphere, control of greenhouse gasses, for studies of marine environments and planetary research. There is significant commercial interest in tunable laser sources for spectroscopic applications as envisioned by industrial partner. Novel lasers will be utilized for development of the prototypes of the commercial products. The testing of the fabricated devices will be performed with participation of Stony Brook University students.This work will involve the design of a novel type of diode lasers with triple layer quantum well active region with engineered subband structure. Devices emitting in spectral region from 3.1 to 3.4 microns at room temperature will be sent to the industrial collaborator to perform die-attach tests. The mounted devices will be extensively characterized via optical measurements. Diode lasers with different heterostructure designs for the active region based on triple layer quantum wells having wide optical gain spectra will be fabricated and characterized. Cascade pumping will be utilized to minimize threshold current to achieve room temperature operation in the spectral region from 3 to 4 µm. The proposed efforts will include the design and development of ultra-low-reflection optical coatings optimized for antimonide-based heterostructures. The GaSb-based diode laser technology will be available for spectroscopic applications in home security and commercial sectors.
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Collaborative research: Compact room temperature operated THz emitters with scalable architecture and low electric power consumption
  • 批准号:
    1707317
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.6万
  • 财政年份:
    2017
  • 负责人:
    Leon Shterengas
  • 依托单位:
海外基金