CAREER: Fundamentals of Complex Chalcogenide Electronic Materials
CAREER: Fundamentals of Complex Chalcogenide Electronic Materials
批准号:
1751736
负责人:
Rafael Jaramillo
金额:
$50.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2018
资助国家:
美国
项目状态:
已结题
起止时间:
2018-06-01 至 2023-05-31
中文摘要
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英文摘要
Non-technical description: New and improved materials are essential for development of new technologies. This project focuses on the development of semiconductors containing the elements barium, zirconium, sulfur, and selenium. The research team is motivated by theoretical predictions that certain combinations of these elements will produce semiconductors with properties that are useful for applications including energy conversion, lighting, and chemical manufacturing. The team tests these predictions by producing thin films of these materials and measuring the properties of the resulting materials. Reflecting the importance of new generation workforce to the economy, this project also includes the launch of a new internship program - the Guided Academic Industry Network (GAIN) - that introduces students at local community colleges to opportunities in materials science. The goals of GAIN are to create opportunities for students, and to enhance the workforce pipeline for materials-focused industries.Technical description: This project focuses on fundamental studies of chalcogenide perovskites in the Ba-Zr-S-Se system, which are predicted by theory to be mixed-anion semiconductors with band gap in the range 1.3 - 1.8 eV. The research is enabled by the development of techniques for the epitaxial growth of complex chalcogenide thin films, using hydride gas precursors and a molecular beam deposition system that was custom-designed for this purpose. Detailed structural and optoelectronic characterization is used to address issues such as the effect of tuning the ionic-to-covalent balance of chemical bonds on the optoelectronic properties of a semiconductor, and the ability of the perovskite structure to accommodate anion alloying. The potential for this semiconducting alloy to be used in minority-carrier devices is assessed by measuring recombination rates, and by evaluating the performance of thin films in two energy-conversion technologies: solar cells and photo-electrochemical hydrogen production.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(8)
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DOI:
10.1103/physrevmaterials.4.091601
发表时间:
2020-06
期刊:
Physical Review Materials
影响因子:
3.4
作者:
[Stephen Filippone;Boyang Zhao;Shanyuan Niu;Nathan Z. Koocher;D. Silevitch;I. Fina;J. Rondinelli;J. Ravichandran;R. Jaramillo]
通讯作者:
Stephen Filippone;Boyang Zhao;Shanyuan Niu;Nathan Z. Koocher;D. Silevitch;I. Fina;J. Rondinelli;J. Ravichandran;R. Jaramillo
DOI:
10.1557/mrc.2018.10
发表时间:
2018
期刊:
MRS Communications
影响因子:
1.9
作者:
[Filippone, Stephen A., Sun, Yi-Yang, Jaramillo, R.]
通讯作者:
Jaramillo, R.
Time-resolved photoluminescence studies of perovskite chalcogenides
钙钛矿硫属化物的时间分辨光致发光研究
DOI:
10.1039/d2fd00047d
发表时间:
2022
期刊:
Faraday Discussions
影响因子:
3.4
作者:
[Ye, Kevin, Zhao, Boyang, Diroll, Benjamin T., Ravichandran, Jayakanth, Jaramillo, R.]
通讯作者:
Jaramillo, R.
DOI:
10.1557/s43578-021-00404-1
发表时间:
2021-09
期刊:
Journal of Materials Research
影响因子:
2.7
作者:
[Stephen Filippone;S. Song;R. Jaramillo]
通讯作者:
Stephen Filippone;S. Song;R. Jaramillo
DOI:
10.1063/1.5124795
发表时间:
2019-10-01
期刊:
APL MATERIALS
影响因子:
6.1
作者:
[Jaramillo, R., Ravichandran, J.]
通讯作者:
Ravichandran, J.
共 7 条
Collaborative Research: Developing metal-organic molecular beam epitaxy (MOMBE) for chalcogenide semiconductor thin film synthesis
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批准号:2224948
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项目类别:Continuing Grant
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资助金额:$45.08万
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财政年份:2022
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负责人:Rafael Jaramillo
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依托单位:
国内基金
海外基金
The Heterogenous Impact of Monetary Policy on Firms' Risk and Fundamentals
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批准号:--
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项目类别:外国学者研究基金项目
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资助金额:--
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批准年份:2024
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负责人:潘军
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依托单位: