CAREER: Fundamentals of Complex Chalcogenide Electronic Materials

职业：复杂硫族化物电子材料的基础知识

• 批准号: 1751736
• 负责人: Rafael Jaramillo
• 金额: $ 50万
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-06-01 至 2023-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1751736&HistoricalAwards=false
• 关键词: CAREER; Fundamentals; Complex; Chalcogenide; Electronic

Non-technical description: New and improved materials are essential for development of new technologies. This project focuses on the development of semiconductors containing the elements barium, zirconium, sulfur, and selenium. The research team is motivated by theoretical predictions that certain combinations of these elements will produce semiconductors with properties that are useful for applications including energy conversion, lighting, and chemical manufacturing. The team tests these predictions by producing thin films of these materials and measuring the properties of the resulting materials. Reflecting the importance of new generation workforce to the economy, this project also includes the launch of a new internship program - the Guided Academic Industry Network (GAIN) - that introduces students at local community colleges to opportunities in materials science. The goals of GAIN are to create opportunities for students, and to enhance the workforce pipeline for materials-focused industries.Technical description: This project focuses on fundamental studies of chalcogenide perovskites in the Ba-Zr-S-Se system, which are predicted by theory to be mixed-anion semiconductors with band gap in the range 1.3 - 1.8 eV. The research is enabled by the development of techniques for the epitaxial growth of complex chalcogenide thin films, using hydride gas precursors and a molecular beam deposition system that was custom-designed for this purpose. Detailed structural and optoelectronic characterization is used to address issues such as the effect of tuning the ionic-to-covalent balance of chemical bonds on the optoelectronic properties of a semiconductor, and the ability of the perovskite structure to accommodate anion alloying. The potential for this semiconducting alloy to be used in minority-carrier devices is assessed by measuring recombination rates, and by evaluating the performance of thin films in two energy-conversion technologies: solar cells and photo-electrochemical hydrogen production.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性描述：新的和改进的材料对于新技术的发展至关重要。该项目的重点是开发含有钡、锆、硫和硒元素的半导体。该研究团队的动机是理论预测，这些元素的某些组合将产生具有可用于能源转换，照明和化学制造等应用的特性的半导体。该团队通过生产这些材料的薄膜并测量所得材料的特性来测试这些预测。为了反映新一代劳动力对经济的重要性，该项目还包括推出一个新的实习计划-指导学术行业网络（GAIN）-向当地社区学院的学生介绍材料科学的机会。GAIN的目标是为学生创造机会，并加强以材料为重点的行业的劳动力管道。技术描述：本项目重点是Ba-Zr-S-Se系统中硫属钙钛矿的基础研究，理论预测其为带隙在1.3 - 1.8 eV范围内的混合阴离子半导体。这项研究是通过开发复杂的硫属化物薄膜的外延生长技术，使用氢化物气体前体和分子束沉积系统，这是定制设计用于此目的。详细的结构和光电表征用于解决诸如调整化学键的离子-共价平衡对半导体的光电性质的影响以及钙钛矿结构容纳阴离子合金化的能力等问题。这种半导体合金用于少数载流子器件的潜力是通过测量复合率和评估薄膜在两种能量转换技术中的性能来评估的：太阳能电池和光电化学制氢。该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Discovery of highly polarizable semiconductors BaZrS3 and Ba3Zr2S7

• DOI: 10.1103/physrevmaterials.4.091601
• 发表时间: 2020-06
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: Stephen Filippone;Boyang Zhao;Shanyuan Niu;Nathan Z. Koocher;D. Silevitch;I. Fina;J. Rondinelli;J. Ravichandran;R. Jaramillo

Determination of adsorption-controlled growth windows of chalcogenide perovskites

硫属化物钙钛矿吸附控制生长窗的测定

• DOI: 10.1557/mrc.2018.10
• 发表时间: 2018
• 期刊: MRS Communications
• 影响因子: 1.9
• 作者: Filippone, Stephen A.;Sun, Yi-Yang;Jaramillo, R.
• 通讯作者: Jaramillo, R.

Time-resolved photoluminescence studies of perovskite chalcogenides

钙钛矿硫属化物的时间分辨光致发光研究

• DOI: 10.1039/d2fd00047d
• 发表时间: 2022
• 期刊: Faraday Discussions
• 影响因子: 3.4
• 作者: Ye, Kevin;Zhao, Boyang;Diroll, Benjamin T.;Ravichandran, Jayakanth;Jaramillo, R.
• 通讯作者: Jaramillo, R.

High densification of BaZrS3 powder inspired by the cold-sintering process

• DOI: 10.1557/s43578-021-00404-1
• 发表时间: 2021-09
• 期刊: Journal of Materials Research
• 影响因子: 2.7
• 作者: Stephen Filippone;S. Song;R. Jaramillo

In praise and in search of highly-polarizable semiconductors: Technological promise and discovery strategies

• DOI: 10.1063/1.5124795
• 发表时间: 2019-10-01
• 期刊: APL MATERIALS
• 影响因子: 6.1
• 作者: Jaramillo, R.;Ravichandran, J.
• 通讯作者: Ravichandran, J.