EAGER: Advancing High-Efficiency Nanoscale Antiferromagnetic Spintronics with Two-Dimensional Half Metals

EAGER：利用二维半金属推进高效纳米级反铁磁自旋电子学

• 批准号: 1753380
• 负责人: Xiang Zhang
• 金额: $ 10万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2020-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1753380&HistoricalAwards=false
• 关键词: EAGER; Advancing; Efficiency; Nanoscale; Antiferromagnetic

Antiferromagnets hold promise in spintronics, due to the unique advantages over ferromagnets, such as high phase transition temperatures and null stray field. These characteristics make antiferromagnet appealing for high-density integrated devices, because each magnetic bit is robust against thermal and environmental magnetic field perturbation, and adjacent bits does not interfere mutually. However, zero-magnetization, an intrinsic attribute of antiferromagnet, usually is considered to be a primary factor limiting its applications. Despite of zero-magnetization, the Fermi surface electrons can be 100% spin-polarized, highly desirable for high-efficiency spintronic devices. Through rational material design of antiferromagnetic half metals, a novel type of spin field effect transistor can be realized. The work will fundamentally advance the nanoscale spintronics and the applications in information processing and storage. This project supports the study of a novel type of two-dimensional materials, antiferromagnetic half metals, and the development of spin field effect transistors. The study can fundamentally impact the state of the art spintronics and the related applications in information processing and storage. This work would also provide an excellent platform for education activities. Such an interdisciplinary research brings together researchers from material scientists, physicists, and electronic engineers. It requires concerted efforts to design and synthesize the promising antiferromagnetic materials, fabricate nanoscale transistors, and measure and optimize the device performance.

反铁磁体由于其独特的优势，如高的相变温度和零杂散场，在自旋电子学中有着广阔的应用前景。这些特性使得反铁磁体对于高密度集成器件具有吸引力，因为每个磁性位对于热和环境磁场扰动是鲁棒的，并且相邻位不会相互干扰。然而，反铁磁体的零磁化特性一直被认为是限制其应用的主要因素。尽管零磁化，费米表面电子可以是100%自旋极化的，这对于高效自旋电子器件是非常理想的。通过对反铁磁半金属材料的合理设计，可以实现新型自旋场效应晶体管。这项工作将从根本上推动纳米自旋电子学及其在信息处理和存储领域的应用。本计画将支援新型二维材料反铁磁半金属的研究，以及自旋场效电晶体的开发。这项研究将从根本上影响自旋电子学及其在信息处理和存储领域的应用。这项工作还将为教育活动提供一个极好的平台。这样一个跨学科的研究汇集了来自材料科学家，物理学家和电子工程师的研究人员。设计和合成有前途的反铁磁材料、制备纳米晶体管、测量和优化器件性能等都需要协同努力。

项目成果

Enhanced ferroelectricity in ultrathin films grown directly on silicon

• DOI: 10.1038/s41586-020-2208-x
• 发表时间: 2020-04-01
• 期刊: NATURE
• 影响因子: 64.8
• 作者: Cheema, Suraj S.;Kwon, Daewoong;Salahuddin, Sayeef
• 通讯作者: Salahuddin, Sayeef

Multiferroicity in atomic van der Waals heterostructures

• DOI: 10.1038/s41467-019-10693-0
• 发表时间: 2019-06-14
• 期刊: NATURE COMMUNICATIONS
• 影响因子: 16.6
• 作者: Gong, Cheng;Kim, Eun Mi;Zhang, Xiang
• 通讯作者: Zhang, Xiang