Collaborative Research: Non-Conventional Etching and MOCVD Regrowth for Beta-GaO/AlGaO 3D HEMTs

合作研究：Beta-GaO/AlGaO 3D HEMT 的非常规蚀刻和 MOCVD 再生长

• 批准号: 1810041
• 负责人: Hongping Zhao
• 金额: $ 17.15万
• 依托单位: Ohio State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-08-01 至 2022-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1810041&HistoricalAwards=false
• 关键词: Collaborative; Research; Non; Conventional; Etching

Gallium oxide represents a promising semiconductor material for electronic devices concerning size scaling and performance enhancement especially for applications in high voltage, high temperature, and high frequency components. Both materials development and device fabrication based on this new semiconductor material is still at its infancy. This project explores the material growth and device processing to achieve a highly scalable radio frequency device with performance beyond the current device technology based on other semiconductor materials such as silicon, gallium nitride or silicon carbide. This project seeks to address the rising challenges in the etching and material growth process due to the complex atomic structure of this oxide semiconductor. Understanding of the fundamental etching mechanisms and materials growth process is critical to fully utilize the advantages offered by this emerging material system. A successful execution of this research is expected to provide a knowledge foundation to electronics industry with positive impacts on the US economy. The research is integrated with educational activities and outreach to benefit the broader community. The proposed education plans focus on integration of research and education, curriculum development, and student training. The results obtained from the proposed research will provide inspiring teaching materials and laboratory projects, to provide training of our next generation workforce for embracing emerging technologies. This project trains two graduate students in the areas of advanced semiconductor materials synthesis, material characterization, and device design and fabrication. The principal investigators (PIs) are strongly committed to promoting the participation of underrepresented groups including women in science and engineering, by creating an inclusive environment, active mentoring, and leading by examples. The proposed outreach activities focus on high school girls and teachers. Both PIs will continue to actively lead or be involved in existing education and outreach programs including the NSF Research Experience for Undergraduates (REU) and Research Experience for Teachers (RET) programs, local and IEEE Women in Engineering programs.Gallium oxide (Ga2O3; GaO), with high breakdown field strength, represents an emerging ultrawide bandgap semiconductor beyond silicon carbide and gallium nitride. The goal of the proposed research is to demonstrate a three-dimensional (3D) GaO/AlGaO high electron mobility transistor (HEMT) using a 3D channel formed by a non-conventional damage-free anisotropic etching technique (meta-assisted chemical etch; MacEtch) followed by metalorganic chemical vapor deposition (MOCVD) epitaxial regrowth of AlGaO. The scope of the research includes: i) realizing high aspect ratio Ga2O3 3D channel structures using the non-destructive MacEtch technology; ii) developing MOCVD growth, doping, and regrowth of AlGaO on the MacEtch-produced non-planar Ga2O3 structures; iii) characterizing the MacEtched Ga2O3 surfaces and the regrown GaO/AlGaO hetero-interfaces chemically, structurally, optically, and electrically; and iv) demonstrating GaO/AlGaO HEMTs with non-planar 3D channels. The proposed GaO/AlGaO HEMT structure, with the non-planar 3D topology and the complex monoclinic crystal structure, provides a unique platform to explore the crystal orientation dependent etching, growth rate, AlGaO composition, GaO/AlGaO interface defects, and dopant/impurity incorporation. The intellectual significance of the project will establish fundamental understanding of the carrier generation and mass transport properties in MacEtch of Ga2O3 as a function of metal catalyst pattern and its alignment with surface orientation, crystal doping concentration, and ultra-violet light illumination wavelength and intensity, as well as the etching mechanism for wide bandgap oxide semiconductors in general. Surface and interface characterization will provide insights in the contributing and limiting factors in vacancy and other defects related traps and establish control process for different device architecture requirements. Beyond the proposed program, the platform and innovative concepts to be explored can also be used for many other types of devices for size scaling and performance enhancement, including optoelectronics devices such as solar blind ultraviolet (UV) detectors and high temperature flame sensors.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

氧化镓代表了用于电子器件的有前途的半导体材料，其涉及尺寸缩放和性能增强，特别是用于高压、高温和高频元件中的应用。基于这种新型半导体材料的材料开发和器件制造仍处于起步阶段。该项目探索了材料生长和器件加工，以实现高度可扩展的射频器件，其性能超出了基于其他半导体材料（如硅，氮化镓或碳化硅）的当前器件技术。该项目旨在解决由于这种氧化物半导体的复杂原子结构而导致的蚀刻和材料生长过程中的挑战。理解基本的蚀刻机制和材料生长过程对于充分利用这种新兴材料系统提供的优势至关重要。这项研究的成功执行预计将为电子行业提供知识基础，对美国经济产生积极影响。这项研究与教育活动和外联活动相结合，以造福更广泛的社区。拟议的教育计划侧重于研究与教育、课程开发和学生培训的一体化。从拟议的研究中获得的结果将提供鼓舞人心的教材和实验室项目，为我们的下一代劳动力提供培训，以拥抱新兴技术。本计画训练两名研究生于先进半导体材料合成、材料特性、以及元件设计与制造领域。主要研究者（PI）坚定地致力于促进代表性不足的群体，包括妇女在科学和工程的参与，通过创造一个包容性的环境，积极的指导，并以身作则。 拟议的外联活动侧重于高中女生和教师。这两个PI将继续积极领导或参与现有的教育和推广计划，包括NSF本科生研究经验（REU）和教师研究经验（RET）计划，当地和IEEE妇女工程计划。氧化镓（Ga 2 O3; GaO），具有高击穿场强，代表了一种新兴的超宽带隙半导体超越碳化硅和氮化镓。提出的研究的目标是证明一个三维（3D）的GaO/AlGaO高电子迁移率晶体管（HEMT）使用的3D通道形成的非传统的无损伤的各向异性蚀刻技术（元辅助化学蚀刻; MacEtch），然后由金属有机化学气相沉积（MOCVD）外延再生长的AlGaO。研究范围包括：i）使用非破坏性MacEtch技术实现高深宽比的Ga 2 O3 3D沟道结构; ii）在MacEtch产生的非平面Ga 2 O3结构上开发MOCVD生长、掺杂和再生长AlGaO; iii）表征MacEtch的Ga 2 O3表面和再生长的GaO/AlGaO异质界面的化学、结构、光学和电学特性;以及iv）展示具有非平面3D沟道的GaO/AlGaO HEMT。所提出的具有非平面3D拓扑结构和复杂单斜晶体结构的GaO/AlGaO HEMT结构提供了一个独特的平台来探索晶体取向依赖的蚀刻、生长速率、AlGaO成分、GaO/AlGaO界面缺陷和掺杂剂/杂质掺入。该项目的智力意义将建立基本的理解的载体产生和质量传输特性的MacEtch的Ga 2 O3作为一个功能的金属催化剂图案和其对齐与表面取向，晶体掺杂浓度，紫外光照射波长和强度，以及一般的宽带隙氧化物半导体的蚀刻机制。 表面和界面表征将提供空位和其他缺陷相关陷阱的贡献和限制因素的见解，并为不同的器件架构要求建立控制过程。除了拟议的计划之外，有待探索的平台和创新概念也可用于许多其他类型的设备，以实现尺寸缩放和性能增强，包括日盲紫外线（UV）等光电子设备该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查进行评估，被认为值得支持的搜索.

项目成果

MOCVD epitaxy of β-(AlxGa1−x)2O3 films on (100) and (-201) β-Ga2O3 substrates with Al compositions up to 52%

MOCVD%20外延%20of%20β-(AlxGa1–x)2O3%20films%20on%20(100)%20and%20(-201)%20β-Ga2O3%20基板%20with%20Al%20compositions%20up%20to%2052

• 发表时间: 2021
• 期刊: 2021 MRS Spring Meeting
• 作者: A F M A. U. Bhuiyan, Z. Feng

A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (Al x Ga 1−x ) 2 O 3

结合原子探针断层扫描和无监督机器学习的方法来理解 (Al x Ga 1–x ) 2 O 3 中的相变

• DOI: 10.1063/5.0002049
• 发表时间: 2020
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Sarker, Jith;Broderick, Scott;Bhuiyan, A. F.;Feng, Zixuan;Zhao, Hongping;Mazumder, Baishakhi
• 通讯作者: Mazumder, Baishakhi

Si doping in MOCVD grown (010) β-(Al x Ga 1−x ) 2 O 3 thin films

MOCVD 生长 (010) β-(Al x Ga 1âx ) 2 O 3 薄膜中的 Si 掺杂

• DOI: 10.1063/5.0084062
• 发表时间: 2022
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Bhuiyan, A. F.;Feng, Zixuan;Meng, Lingyu;Fiedler, Andreas;Huang, Hsien-Lien;Neal, Adam T.;Steinbrunner, Erich;Mou, Shin;Hwang, Jinwoo;Rajan, Siddharth
• 通讯作者: Rajan, Siddharth

MOCVD Epitaxy of Ultrawide Bandgap β-(Al x Ga 1–x ) 2 O 3 with High-Al Composition on (100) β-Ga 2 O 3 Substrates

(100) β-Ga 2 O 3 衬底上高 Al 成分的超宽带隙 β-(Al x Ga 1âx ) 2 O 3 的 MOCVD 外延

• DOI: 10.1021/acs.cgd.0c00864
• 发表时间: 2020
• 期刊: Crystal Growth & Design
• 影响因子: 3.8
• 作者: Anhar Uddin Bhuiyan, A F;Feng, Zixuan;Johnson, Jared M.;Huang, Hsien-Lien;Hwang, Jinwoo;Zhao, Hongping
• 通讯作者: Zhao, Hongping

Large-size free-standing single-crystal β-Ga 2 O 3 membranes fabricated by hydrogen implantation and lift-off

通过氢注入和剥离制备大尺寸自支撑单晶β-Ga 2 O 3 膜

• DOI: 10.1039/d1tc00682g
• 发表时间: 2021
• 期刊: Journal of Materials Chemistry C
• 影响因子: 6.4
• 作者: Zheng, Yixiong;Feng, Zixuan;Bhuiyan, A. F.;Meng, Lingyu;Dhole, Samyak;Jia, Quanxi;Zhao, Hongping;Seo, Jung-Hun
• 通讯作者: Seo, Jung-Hun