Collaborative Research: Beta-Ga2O3 high voltage power MOSFETs using metal-organic chemical vapor deposition

合作研究：使用金属有机化学气相沉积的 Beta-Ga2O3 高压功率 MOSFET

• 批准号: 2019753
• 负责人: Hongping Zhao
• 金额: $ 22.66万
• 依托单位: Ohio State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-08-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2019753&HistoricalAwards=false
• 关键词: Collaborative; Research; Beta; Ga2O3; voltage

Proposal TitleCollaborative Research: Gallium Oxide High-Voltage Devices Using Advanced Materials Growth Technology for Efficient, Smart Power Electronics (Proposal ID# 2019749/2019753)Non-technical Abstract:Power electronics is an integral component in many applications including the grids, electric transportation, data centers, to name a few. It is also a critical component on several emerging applications such as electric cars, electric aircraft and microgrid. However, significant energy is typically wasted as heat in the existing power electronics systems. Ultra-wide bandgap semiconductors such as gallium oxide (beta-Ga2O3) can provide energy efficient power electronics especially at higher voltage ratings. Due to their intrinsic materials properties, Ga2O3 power electronics can operate at higher temperatures, handle higher powers at reduced size, weight, and at the same time be more efficient than existing technologies. This collaborative project between the University at Buffalo (UB) and the Ohio State University (OSU) will address both fundamental science and technology development in order to demonstrate Ga2O3 power transistors. The project will utilize advanced materials growth technology along with radical device designs to achieve multi-kilovolt operation. The integrated education plan aims to educate and motivate students, especially female students and those from the underrepresented groups to pursue careers in engineering and related fields. The research opportunities given to undergraduate and graduate students will help build the skills of the future workforce, hence maintaining the economic competitiveness of the US. In addition, it will contribute to the continued growth of the power electronics market world-wide.Technical Abstract:The large bandgap of beta-Ga2O3 and the maturity of the growth technology is exploited in this collaborative project to design, develop, and demonstrate multi-kilovolt (kV) class power transistors. High quality beta-Ga2O3 material grown by metal-organic chemical vapor deposition (MOCVD) is leveraged with the experimental demonstration of the iron doped current blocking layer to design the multi-kV transistors. The scientific objectives of this project at University at Buffalo are (i) developing and optimizing iron and chromium ion implantation conditions for the current blocking layer; (ii) designing the device and process flow for multi-kV blocking; (iii) engineering the device to remove the parasitic breakdown and achieve intrinsic breakdown capability; (iv) investigating the switching losses of the fabricated devices; (v) using the temperature dependent current and capacitance characteristics to create a scalable device model for benchmarking. At Ohio State University, the objective is to understand the fundamental MOCVD growth and doping mechanisms of beta-Ga2O3 targeting for drift layer thicknesses of tens of micrometers with controllable n-type doping, especially in the low doping range. Specifically, this project aims to (i) study the impurity incorporation and its correlation with the growth condition and film growth rate; (ii) identify, understand, and control potential compensation centers, including extrinsic impurities and intrinsic point defects, through comprehensive epitaxial-layer characterization and feedbacks from device characterization.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

提案标题合作研究：利用先进材料生长技术实现高效、智能电力电子的氧化镓高压器件（提案 ID# 2019749/2019753）非技术摘要：电力电子是许多应用中不可或缺的组件，包括电网、电力交通、数据中心等。它也是电动汽车、电动飞机和微电网等多种新兴应用的关键组件。然而，在现有的电力电子系统中，大量的能量通常以热量的形式被浪费掉。氧化镓（β-Ga2O3）等超宽带隙半导体可以提供节能的电力电子器件，尤其是在更高的额定电压下。由于其固有的材料特性，Ga2O3 电力电子器件可以在更高的温度下运行，以更小的尺寸和重量处理更高的功率，同时比现有技术更高效。布法罗大学 (UB) 和俄亥俄州立大学 (OSU) 之间的这一合作项目将致力于基础科学和技术开发，以展示 Ga2O3 功率晶体管。该项目将利用先进的材料生长技术以及激进的器件设计来实现数千伏的运行。综合教育计划旨在教育和激励学生，特别是女学生和弱势群体的学生从事工程及相关领域的职业。为本科生和研究生提供的研究机会将有助于培养未来劳动力的技能，从而保持美国的经济竞争力。此外，它将为全球电力电子市场的持续增长做出贡献。 技术摘要：该合作项目利用β-Ga2O3的大带隙和成熟的生长技术来设计、开发和演示数千伏（kV）级功率晶体管。利用金属有机化学气相沉积 (MOCVD) 生长的高质量 β-Ga2O3 材料与铁掺杂电流阻挡层的实验演示来设计多 kV 晶体管。布法罗大学该项目的科学目标是（i）开发和优化电流阻挡层的铁和铬离子注入条件； (ii) 设计多kV闭锁装置及工艺流程； (iii) 设计器件以消除寄生击穿并实现固有击穿能力； (iv) 研究所制造器件的开关损耗； (v) 使用与温度相关的电流和电容特性来创建用于基准测试的可扩展器件模型。俄亥俄州立大学的目标是了解 β-Ga2O3 的基本 MOCVD 生长和掺杂机制，以可控 n 型掺杂（尤其是在低掺杂范围）实现数十微米的漂移层厚度。具体来说，该项目旨在（i）研究杂质掺入及其与生长条件和薄膜生长速率的相关性； (ii) 通过全面的外延层表征和器件表征的反馈，识别、理解和控制潜在的补偿中心，包括外在杂质和内在点缺陷。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力优点和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

MOCVD growth and characterizations of β-(AlxGa1−x)2O3 thin films and N-type doping

β-(AlxGa1-x)2O3 薄膜和 N 型掺杂的 MOCVD 生长和表征

• 发表时间: 2020
• 期刊: MRS Spring/Fall Meeting (virtual
• 作者: A F M A. U. Bhuiyan, Z. Feng

MOCVD epitaxy of β-(AlxGa1−x)2O3 films on (100) and (-201) β-Ga2O3 substrates with Al compositions up to 52%

MOCVD%20外延%20of%20β-(AlxGa1–x)2O3%20films%20on%20(100)%20and%20(-201)%20β-Ga2O3%20基板%20with%20Al%20compositions%20up%20to%2052

• 发表时间: 2021
• 期刊: 2021 MRS Spring Meeting
• 作者: A F M A. U. Bhuiyan, Z. Feng

Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al x Ga 1−x ) 2 O 3 alloys

MOCVD 生长的 m 面 α-(Al x Ga 1–x ) 2 O 3 合金各向异性光学性能的测定

• DOI: 10.35848/1347-4065/acd095
• 发表时间: 2023
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Kluth, Elias;Anhar Uddin Bhuiyan, A. F. M.;Meng, Lingyu;Bläsing, Jürgen;Zhao, Hongping;Strittmatter, André;Goldhahn, Rüdiger;Feneberg, Martin
• 通讯作者: Feneberg, Martin

Metalorganic chemical vapor deposition of (100) β-Ga 2 O 3 on on-axis Ga 2 O 3 substrates

(100) β-Ga 2 O 3 在轴上 Ga 2 O 3 基底上的金属有机化学气相沉积

• DOI: 10.1116/6.0002179
• 发表时间: 2022
• 期刊: Journal of Vacuum Science & Technology A
• 影响因子: 2.9
• 作者: Meng, Lingyu;Bhuiyan, A F;Feng, Zixuan;Huang, Hsien-Lien;Hwang, Jinwoo;Zhao, Hongping
• 通讯作者: Zhao, Hongping

Band offsets at metalorganic chemical vapor deposited β-(Al x Ga 1−x ) 2 O 3 /β-Ga 2 O 3 interfaces—Crystalline orientation dependence

金属有机化学气相沉积β-(Al x Ga 1–x ) 2 O 3 /β-Ga 2 O 3 界面处的能带偏移–晶体取向依赖性

• DOI: 10.1116/6.0001260
• 发表时间: 2021
• 期刊: Journal of Vacuum Science & Technology A
• 影响因子: 2.9
• 作者: Bhuiyan, A F;Feng, Zixuan;Huang, Hsien-Lien;Meng, Lingyu;Hwang, Jinwoo;Zhao, Hongping
• 通讯作者: Zhao, Hongping