Quaternary Oxide P-type and Ambipolar Semiconductors for Large-Area CMOS

用于大面积 CMOS 的四元氧化物 P 型和双极半导体

• 批准号: 1902032
• 负责人: John Labram
• 金额: $ 40.1万
• 依托单位: Oregon State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-06-15 至 2022-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1902032&HistoricalAwards=false
• 关键词: Quaternary; Oxide; type; Ambipolar; Semiconductors

Nontechnical:Low-cost, large-area electronics represent a bold vision of the future. If circuits could be printed inexpensively, one could add smart devices to normal objects as easily as affixing a sticker. For this vision to be realized, high-performance, low-cost, large-area thin-film transistors (TFTs) are needed. To process information effectively, such circuits need to be formed of devices capable of transporting both holes and electrons. This would enable complementary logic circuits. Semiconducting metal oxides are one of the most promising material systems for these applications. While electron transporting (n-type) metal oxides are used commercially, hole transporting (p-type) oxides have lagged behind. If p-type oxides with comparable performance to their n-type counterparts were realized, the prospect of ubiquitous, low-cost, large area electronics takes a significant step closer to reality. In the proposed program of research, the authors will advance a unique, and seldom-studied, family of p-type and ambipolar metal oxide semiconductors. New semiconductors composed of four different elements will be synthesized and formed into thin films. The electronic and structural properties of these quaternary oxides will be studied, and thin-film transistors based on these materials will be fabricated. The end goal is to demonstrate simple all-oxide complementary electronic circuits. Researchers will participate in the Oregon Museum of Science and Industry Science Communication Fellowship. This enables researchers to interact with the general public through lectures and demonstrations.Technical:Disordered metal oxide semiconductors possess high electron mobilities, and are employed commercially in unipolar applications, such as television backplanes. Unfortunately, the mobility of hole-transporting (p-type) metal oxide semiconductors remains approximately 2 orders of magnitude below than that of electron-transporting (n-type) materials. While unipolar (n-type) TFTs are adequate for certain applications, such as active matrix displays, complementary (n- and p-type) logic circuits provide greater noise-margins, and ultimately greater yield, than unipolar circuits. In this program of research, a unique family of oxide semiconductors of the general composition 1:1:1:1 MAEO (which may be exemplified by the composition YZnPO, i.e. M=Y, A=Zn, and E=P) will be advanced. Such compounds are believed to share the electronic properties of both binary oxides, and covalent semiconductors such as zinc phosphide. The objective of this project is to identify compounds which exhibit hole field effect mobilities comparable to or greater than that of electrons in amorphous indium gallium zinc oxide(IGZO), for use in all-oxide complementary logic circuits. This project will involve the identification and synthesis of a range of promising new MAEO compounds. These compounds will be characterized electronically in powder form, using contactless techniques, before optimizing and studying the processes required to grow optimal thin film morphology. Electronic devices will serve both as a tool to study these materials and, through extensive optimization, structures to demonstrate high-performance proof-of-principle TFTs. Finally, simple all-oxide complementary opto-electronic circuits (such as inverters) will be demonstrated employing newly-identified MAEO compounds, and appropriate n-type oxide semiconductors materials, such as IGZO.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性：低成本、大面积的电子产品代表着对未来的大胆愿景。如果电路可以廉价地印刷，人们就可以像贴贴纸一样轻松地将智能设备添加到普通物体上。为了实现这一愿景，需要高性能、低成本、大面积的薄膜晶体管(TFT)。为了有效地处理信息，这样的电路需要由能够传输空穴和电子的设备组成。这将使互补逻辑电路成为可能。半导体金属氧化物是最具应用前景的材料体系之一。虽然电子传输(n型)金属氧化物在商业上得到了应用，但空穴传输(p型)氧化物已经落后了。如果实现了性能与n型氧化物相当的p型氧化物，那么无处不在、低成本、大面积电子产品的前景就离现实又近了一大步。在提出的研究计划中，作者将提出一种独特的、很少被研究的p型和双极金属氧化物半导体家族。由四种不同元素组成的新半导体将被合成并形成薄膜。我们将研究这些四元氧化物的电子和结构性质，并以这些材料为基础制备薄膜晶体管。最终目标是演示简单的全氧化物互补电子电路。研究人员将参加俄勒冈州科学与工业博物馆科学交流联谊会。这使研究人员能够通过讲座和演示与普通公众互动。技术：无序金属氧化物半导体具有高电子迁移率，并在商业上用于单极应用，如电视背板。不幸的是，空穴传输(p型)金属氧化物半导体的迁移率比电子传输(n型)材料的迁移率低大约两个数量级。虽然单极(n型)TFT对于诸如有源矩阵显示器之类的某些应用是足够的，但互补(n型和p型)逻辑电路提供比单极电路更大的噪声容限，并最终提供更高的成品率。在这项研究计划中，将提出一种独特的氧化物半导体家族，其总组成为1：1：1：1Maeo(可以以组成YZnPO为例，即M=Y、A=Zn和E=P)。这些化合物被认为具有二元氧化物和共价半导体(如磷化锌)的电子性质。本项目的目标是识别出具有与非晶态铟镓锌氧化物(IGZO)中电子相当或更大空穴效应迁移率的化合物，用于全氧化物互补逻辑电路。该项目将涉及一系列有前景的新MAEO化合物的鉴定和合成。这些化合物将使用非接触式技术以粉末形式进行电子表征，然后优化和研究生长最佳薄膜形态所需的工艺。电子设备将作为研究这些材料的工具，并通过广泛的优化，展示高性能的原理证明TFT的结构。最后，使用新发现的MAEO化合物和适当的n型氧化物半导体材料，如IGZO，将展示简单的全氧化物互补光电子电路(如反相器)。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Light soaking in metal halide perovskites studied via steady-state microwave conductivity

• DOI: 10.1038/s42005-020-0350-2
• 发表时间: 2020-04
• 期刊: Communications Physics
• 影响因子: 5.5
• 作者: C. Watts;Lee Aspitarte;Yen‐Hung Lin;Wen Li;Radwan Elzein;R. Addou;M. J. Hong;G. Herman;H. Snaith;J. Labram

Resolving in-plane and out-of-plane mobility using time resolved microwave conductivity

使用时间分辨微波电导率解析面内和面外迁移率

• DOI: 10.1039/d0tc00328j
• 发表时间: 2020
• 期刊: Journal of Materials Chemistry C
• 影响因子: 6.4
• 作者: Chattopadhyay, Shirsopratim;Kokenyesi, Robert S.;Hong, Min Ji;Watts, C Lowell;Labram, John G.
• 通讯作者: Labram, John G.

The effect of substrate curvature on capacitance and current–voltage characteristics in thin-film transistors on flexible substrates

基板曲率对柔性基板上薄膜晶体管电容和电流电压特性的影响

• DOI: 10.1088/2515-7639/abe7c5
• 发表时间: 2021
• 期刊: Journal of Physics: Materials
• 作者: Chattopadhyay, Shirsopratim;Labram, John G.
• 通讯作者: Labram, John G.