Spin-resolved STS, ARPES, and XMCD of magnetically doped topological insulator heterostructures
磁掺杂拓扑绝缘体异质结构的自旋分辨 STS、ARPES 和 XMCD
基本信息
- 批准号:237526155
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:德国
- 项目类别:Priority Programmes
- 财政年份:2013
- 资助国家:德国
- 起止时间:2012-12-31 至 2016-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We propose to study lateral and vertical heterostructures of antiferromagnets/ferromagnets (AFMs/FMs) and magnetically surface-doped topological insulators (TIs). Lateral heterostructures are formed at the edges of monolayers of AFMs/FMs grown on TIs, which we realized for the first time in the current funding period. We will particularly study (i) local changes in the spin-resolved electronic structure of the TI close to the edges of the AFM/FM using spin-resolved scanning tunneling spectroscopy, and (ii) the distance-dependent topological-surface-state mediated magnetic interactions between AFMs/FMs and magnetic atoms adsorbed on the TI surface. Vertical heterostructures are formed by MBE growth of thin TI-layers on top of magnetically bulk-doped TIs. In particular, we will investigate (i) changes to the spin-resolved electronic structure of the undoped thin TI induced by the magnetic phase transition of the magnetically doped TI, and (ii) the magnetic interactions between the ferromagnetic TI and magnetic atoms adsorbed on the surface of the thin undoped TI. The potential outcome of the project will be a detailed atomic-scale understanding of the interface between FMs/AFMs and TIs and of the topological-surface-state mediated magnetic interactions.
本文主要研究了反铁磁体/铁磁体(AFM/FM)和磁性表面掺杂拓扑绝缘体(TI)的横向和纵向异质结构。横向异质结构形成在TI上生长的AFM/FM单层的边缘,这是我们在当前资助期内首次实现的。我们将特别研究(i)使用自旋分辨扫描隧道光谱法在靠近AFM/FM边缘的TI的自旋分辨电子结构中的局部变化,以及(ii)AFM/FM与吸附在TI表面上的磁性原子之间的距离依赖的拓扑表面状态介导的磁性相互作用。垂直异质结构是通过在磁性体掺杂的TI顶部上MBE生长薄TI层形成的。特别是,我们将调查(i)的未掺杂的薄TI的磁相变引起的自旋分辨的电子结构的变化,以及(ii)铁磁TI和吸附在薄的未掺杂的TI的表面上的磁性原子之间的磁相互作用。该项目的潜在成果将是对FM/AFM和TI之间的界面以及拓扑表面状态介导的磁相互作用的详细原子尺度理解。
项目成果
期刊论文数量(7)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Topological insulator homojunctions including magnetic layers: The example of n-p type (n-QLs Bi2Se3/Mn-Bi2Se3) heterostructures
- DOI:10.1063/1.4954834
- 发表时间:2016-02
- 期刊:
- 影响因子:4
- 作者:M. Vališka;J. Warmuth;M. Michiardi;M. Vondráček;Arlette S. Ngankeu;V. Holý;V. Sechovský;G. Springholz;M. Bianchi;J. Wiebe;P. Hofmann;J. Honolka
- 通讯作者:M. Vališka;J. Warmuth;M. Michiardi;M. Vondráček;Arlette S. Ngankeu;V. Holý;V. Sechovský;G. Springholz;M. Bianchi;J. Wiebe;P. Hofmann;J. Honolka
Domain imaging across the magneto-structural phase transitions in Fe1+yTe
- DOI:10.1038/s41535-018-0096-1
- 发表时间:2017-11
- 期刊:
- 影响因子:5.7
- 作者:J. Warmuth;M. Bremholm;P. Hofmann;J. Wiebe;R. Wiesendanger
- 通讯作者:J. Warmuth;M. Bremholm;P. Hofmann;J. Wiebe;R. Wiesendanger
Enhanced spin-ordering temperature in ultrathin FeTe films grown on a topological insulator
- DOI:10.1103/physrevb.97.144513
- 发表时间:2017-11
- 期刊:
- 影响因子:3.7
- 作者:U. R. Singh;J. Warmuth;A. Kamlapure;L. Cornils;M. Bremholm;P. Hofmann;J. Wiebe;R. Wiesendanger
- 通讯作者:U. R. Singh;J. Warmuth;A. Kamlapure;L. Cornils;M. Bremholm;P. Hofmann;J. Wiebe;R. Wiesendanger
Influence of an Anomalous Temperature Dependence of the Phase Coherence Length on the Conductivity of Magnetic Topological Insulators.
- DOI:10.1103/physrevlett.123.036406
- 发表时间:2018-06
- 期刊:
- 影响因子:8.6
- 作者:V. Tkáč;K. Výborný;V. Komanický;J. Warmuth;M. Michiardi;Arlette S. Ngankeu;M. Vondráček;R. Tarasenko;M. Vališka;V. Stetsovych;K. Carva;I. Garate;M. Bianchi;J. Wiebe;V. Holý;P. Hofmann;G. Springholz;V. Sechovský;J. Honolka
- 通讯作者:V. Tkáč;K. Výborný;V. Komanický;J. Warmuth;M. Michiardi;Arlette S. Ngankeu;M. Vondráček;R. Tarasenko;M. Vališka;V. Stetsovych;K. Carva;I. Garate;M. Bianchi;J. Wiebe;V. Holý;P. Hofmann;G. Springholz;V. Sechovský;J. Honolka
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Professor Dr. Philip Hofmann的其他文献
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