Voltage controlled antiferromagnetism in magnetic tunnel junctions

磁隧道结中的压控反铁磁性

• 批准号: 1905783
• 负责人: Weigang Wang
• 金额: $ 42.96万
• 依托单位: University of Arizona
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-07-01 至 2024-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1905783&HistoricalAwards=false
• 关键词: Voltage; controlled; antiferromagnetism; magnetic; tunnel

Non-technical Abstract:An effective way to influence the magnetic properties of a thin film is by using electric fields, which may lead to many new functionalities in future generations of electronic devices. In most cases, this type of electric control of magnetic order is investigated in ferromagnetic (FM) systems. For example, both the preferred direction of magnetization and the size of magnetization of a Fe or Co thin film can be modified by voltages applied on adjacent dielectric layers. Indeed, this effect has been successfully used to manipulate the resistance of a magnetic tunnel junctions (MTJ), a sandwich structure where the tunneling probability of electrons across an insulting barrier depends on the relative orientations of the magnetizations of the two FM films on both sides of the insulator, to achieve a small switching energy that is below 10 fJ. In this project, the principal investigator explores the voltage-controlled magnetic properties in antiferromagnetic (AF) systems. Antiferromagnets have a number of advantages compared with the their FM counterparts: they have no net magnetization therefore AF cells can be packed into extremely high density without affecting each other; for the same reason, they are immune to external magnetic fields; due to the staggered arrangement of spins in antiferromagnets, the spin currents can possibly penetrate much deeper; and most importantly, the intrinsic magnetization switching frequency of antiferromagnets can be in the THz region, promising ultra-high speed operations as well as reduced switching energy. This project incorporates the education and training of graduate/undergraduate students and high school students, especially those belonging to underrepresented groups, in all stages of the research. In addition, outreach to general public will be carried out through activities such as Physics Phun Night and Physics Open House.Technical Abstract:This project aims to explore voltage-controlled antiferromagnetism in MTJs with AF barriers, and in MTJs with the spin-filtering tunneling effect where the magnetoresistance is driven by the AF/FM coupling. In the first research topic, perpendicular MTJs with AF barriers such as Chromium(III) oxide are fabricated, where the insulating layer serves as both the tunnel barrier and the AF material. The exchange bias of the AF materials and the voltage-controlled AF order can be very sensitively detected by the sharp transitions of the perpendicular tunneling magnetoresistance curves measured under different bias voltages. The ability to grow high quality thinfilm heterostructure with extremely small roughness, as well as the fabrication of perpendicular MTJ samples with sub-100nm lateral dimension will enable, for the first time, the investigation of many intrinsic properties with less parasitic effects associated with grain boundaries and defects in the AF layer. In the second research topic, the spin-filtering tunneling effect with the newly discovered 2 dimensional (2D) materials as barriers will be explored. Different 2D materials are incorporated with various nonmagnetic electrodes to facilitate the understanding of the very large TMR. The effort will be focused on voltage-controlled AF/FM coupling in 2D barriers, which can potentially lead to very efficient switching of MTJs. These research activities will not only add significantly to our understanding of voltage-controlled antiferromagnetism, but also benefit applications such as MRAM, spin logic, spintronic oscillators, and neuromorphic processors.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术摘要：影响薄膜磁特性的一种有效方法是使用电场，这可能会导致未来几代电子设备中的许多新功能。在大多数情况下，这种类型的电控制的磁序在铁磁（FM）系统中进行了研究。例如，Fe或Co薄膜的优选磁化方向和磁化大小都可以通过施加在相邻电介质层上的电压来修改。实际上，这种效应已经成功地用于操纵磁性隧道结（MTJ）的电阻，磁性隧道结是一种夹层结构，其中电子穿过绝缘势垒的隧穿概率取决于绝缘体两侧上的两个FM膜的磁化的相对取向，以实现低于10 fJ的小切换能量。在这个项目中，主要研究者探索了反铁磁（AF）系统中的电压控制磁性。反铁磁体与FM相比具有许多优点：它们没有净磁化，因此AF单元可以被包装成非常高的密度而不会相互影响;出于同样的原因，它们不受外部磁场的影响;由于反铁磁体中自旋的交错排列，自旋电流可能会穿透得更深;最重要的是，反铁磁体的本征磁化切换频率可以在THz区域，从而有望实现超高速操作以及降低的切换能量。该项目在研究的所有阶段都包括对研究生/本科生和高中生，特别是那些属于代表性不足群体的学生的教育和培训。此外，还将通过物理物理学之夜和物理学开放日等活动向公众进行宣传。技术摘要：本项目旨在探索具有AF势垒的MTJ中的电压控制反铁磁性，以及具有自旋过滤隧道效应的MTJ中的磁阻由AF/FM耦合驱动。在第一个研究课题中，制造了具有AF屏障（例如氧化铬（III））的垂直MTJ，其中绝缘层用作隧道屏障和AF材料。通过在不同偏压下测量的垂直隧穿磁电阻曲线的突变，可以非常灵敏地检测出AF材料的交换偏压和电压控制的AF序。生长具有极小粗糙度的高质量薄膜异质结构的能力，以及具有亚100 nm横向尺寸的垂直MTJ样品的制造，将首次实现对许多固有特性的研究，同时减少与AF层中的晶界和缺陷相关的寄生效应。 在第二个研究课题中，将探索以新发现的二维（2D）材料作为势垒的自旋过滤隧道效应。 不同的2D材料与各种不同的TMR电极相结合，以便于理解非常大的TMR。这项工作将集中在2D屏障中的电压控制AF/FM耦合上，这可能会导致MTJ的非常有效的切换。这些研究活动不仅将大大增加我们对压控反铁磁性的理解，而且将使MRAM、自旋逻辑、自旋电子振荡器和神经形态处理器等应用受益。该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Perpendicular magnetic tunnel junctions with multi-interface free layer

• DOI: 10.1063/5.0066782
• 发表时间: 2021-12-13
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Khanal, Pravin;Zhou, Bowei;Wang, Weigang
• 通讯作者: Wang, Weigang

On the temperature-dependent characteristics of perpendicular shape anisotropy-spin transfer torque-magnetic random access memories

垂直形状各向异性-自旋转移矩-磁随机存取存储器的温度相关特性

• DOI: 10.1063/5.0054356
• 发表时间: 2021
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Zhang, Wei;Tong, Zihan;Xiong, Yuzan;Wang, Weigang;Shao, Qiming
• 通讯作者: Shao, Qiming