I-Corps: Flexible and Bendable Electronic and Photonic Device Platform
I-Corps:灵活且可弯曲的电子和光子器件平台
基本信息
- 批准号:1907626
- 负责人:
- 金额:$ 5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2018
- 资助国家:美国
- 起止时间:2018-12-01 至 2024-05-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The broader impact/commercial potential of this I-Corps project is to significantly reduce the manufacturing cost of semiconductor devices for electronic, photonic, and energy applications. For example, the proposed innovation will bring 40% total cost reduction in light-emitting diodes (LED) chip/die manufacturing, which will provide a faster route for the energy-efficient LEDs to become a dominant lighting source. The innovation will also offer a new device platform for electric power conversion and switching in electric vehicles and smart-grid systems, which means significant benefits in energy saving and greenhouse-gas emission reduction. Hence, the proposed innovation will facilitate the rapid development of next-generation green device technology that can readily be applied to the real-world systems. Furthermore, the flexible material platforms will enable not only mechanically flexible devices for the applications of portable, wearable, and implantable systems, but also new devices with additional functionality for more versatile applications beyond just flexible devices. The new transformative technologies stemming from this project will help U.S. semiconductor manufacturers cope with global challenges and win in the competitive international markets. Therefore, the new platform will contribute to consolidating the U.S. position as a technology and market leader by strategically strengthening the innovation ecosystem of the semiconductor technology.This I-Corps project proposes a promising replacement for single-crystalline wafer substrates of semiconductor devices by offering a new mechanically-flexible low-cost substrate. The objective of the project is to deliver commercially available low-cost, high-crystalline-quality, and flexible tape substrates to be employed as a new platform of photonic and electronic semiconductor devices. To accomplish the objective, the team will develop a new substrate consisting of flexible metal tape and a single-crystalline gallium nitride (GaN) semiconductor thin film by an invented direct deposition technique. This method also enables the roll-to-roll and large-scale continuous production of high-quality semiconductor materials. The developed GaN/metal tape will to serve as the substrate for the fabrication of LEDs, as an initial target of the innovative technology, and other semiconductor devices. The result will be flexible inorganic LEDs with high efficiency and application versatility at a fraction of the cost of current solid-state lighting sources. The new product, while it is a potentially disruptive technology, has not been deployed in the device market with various products and applications. Therefore, understanding of business development will be critical. The team will perform customer survey and business model development via investigation of value proposition and customer discovery.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
这个I-Corps项目的更广泛的影响/商业潜力是显着降低电子,光子和能源应用的半导体器件的制造成本。例如,拟议的创新将使发光二极管(LED)芯片/芯片制造的总成本降低40%,这将为节能LED成为主导照明光源提供更快的途径。该创新还将为电动汽车和智能电网系统中的电力转换和切换提供新的设备平台,这意味着在节能和减少温室气体排放方面具有显着效益。因此,所提出的创新将促进下一代绿色器件技术的快速发展,该技术可以容易地应用于现实世界的系统。此外,柔性材料平台将不仅使机械柔性设备能够用于便携式,可穿戴和可植入系统的应用,而且还使具有额外功能的新设备能够用于柔性设备之外的更通用的应用。该项目产生的新变革性技术将帮助美国半导体制造商科普全球挑战,并在竞争激烈的国际市场中获胜。因此,新平台将通过战略性地加强半导体技术的创新生态系统,为巩固美国作为技术和市场领导者的地位做出贡献。该I-Corps项目通过提供新的机械柔性低成本基板,提出了一种有望取代半导体器件单晶晶片基板的新方法。该项目的目标是提供商业上可用的低成本,高晶体质量和柔性带衬底,作为光子和电子半导体器件的新平台。为了实现这一目标,该团队将通过发明的直接沉积技术开发一种由柔性金属带和单晶氮化镓(GaN)半导体薄膜组成的新衬底。这种方法还可以实现卷对卷和大规模连续生产高质量的半导体材料。开发的GaN/金属带将作为制造LED的衬底,作为创新技术的初始目标,以及其他半导体器件。其结果将是具有高效率和应用多功能性的柔性无机LED,而成本仅为当前固态照明光源的一小部分。新产品虽然是一项潜在的颠覆性技术,但尚未在设备市场部署各种产品和应用程序。因此,对业务发展的理解至关重要。该团队将通过调查价值主张和客户发现来进行客户调查和商业模式开发。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
项目成果
期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape
- DOI:10.1039/d0tc04634e
- 发表时间:2021-03
- 期刊:
- 影响因子:6.4
- 作者:Shahab Shervin;Mina Moradnia;Md Kamrul Alam;T. Tong;M. Ji;Jie Chen;S. Pouladi;T. Detchprohm;R. Forrest;J. Bao;R. Dupuis;J. Ryou
- 通讯作者:Shahab Shervin;Mina Moradnia;Md Kamrul Alam;T. Tong;M. Ji;Jie Chen;S. Pouladi;T. Detchprohm;R. Forrest;J. Bao;R. Dupuis;J. Ryou
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Jae-Hyun Ryou其他文献
Growth of InGaN HBTs by MOCVD
- DOI:
10.1007/s11664-006-0123-z - 发表时间:
2006-04-01 - 期刊:
- 影响因子:2.500
- 作者:
Theodore Chung;Jae Limb;Jae-Hyun Ryou;Wonseok Lee;Peng Li;Dongwon Yoo;Xue-Bing Zhang;Shyh-Chiang Shen;Russell D. Dupuis;David Keogh;Peter Asbeck;Ben Chukung;Milton Feng;Dimitri Zakharov;Zusanne Lilienthal-Weber - 通讯作者:
Zusanne Lilienthal-Weber
Jae-Hyun Ryou的其他文献
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{{ truncateString('Jae-Hyun Ryou', 18)}}的其他基金
EAGER: Flexible III-N High-Electron-Mobility Transistors with Controlled External Bending Strains for Wide-Bandgap Semiconductor Devices
EAGER:用于宽带隙半导体器件的具有受控外部弯曲应变的柔性 III-N 高电子迁移率晶体管
- 批准号:
1842299 - 财政年份:2018
- 资助金额:
$ 5万 - 项目类别:
Standard Grant
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