Phase III IUCRC at University of Houston: Center for Electromagnetic Compatibility

休斯顿大学 IUCRC 第三阶段：电磁兼容性中心

• 批准号: 1922389
• 负责人: Ji Chen
• 金额: $ 25.24万
• 依托单位: University of Houston
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-12-15 至 2024-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1922389&HistoricalAwards=false
• 关键词: Phase; III; IUCRC; University; Houston

Electromagnetic compatibility (EMC) and Signal/Power Integrity (SI/PI) problems can significantly decrease the reliability, increase the cost, and delay the development schedules of modern electronic systems. Design for EMC ensures an electronic system can function in the presence of external electromagnetic noise and at the same time its radiated electromagnetic interference does not impact the functionality of other devices. SI/PI design ensures proper circuit operation at high speeds. Good EMC/SI/PI design is essential to industry for successful product development and customer satisfaction. The mission of the Center for Electromagnetic Compatibility is to support EMC/SI/PI research and education projects with a goal of developing the knowledge base, tools and people necessary to solve today’s EMC/SI/PI problems and address the EMC/SI/PI problems of the future. Advancing the EMC/SI/PI technologies has significant societal impacts in the internet and information era, and can significantly increase the economic competitiveness of the US. The research activities in the center can bring a disruptive advancement in the hardware level to the new technologies of 5G wireless, autonomous driving, smart city, etc., and can have profound impacts on human society and improve national security as our society is more dependent on data connection and internet of everything. With emerging technology trends, the need for EMC/SI/PI research and education grows rapidly. Not only new challenges occur due to higher data rates, greater design density, and lower power, but also new scopes are required to address the issues such as novel ways for high-frequency EMC measurements and hardware related security problems. EMC becomes truly essential to enable and support technology revolutions and development. The NSF IUCRC Center for Electromagnetic Compatibility (CEMC) in Phase III will focus on five thrust areas: 1) EMI, ESD and Immunity; 2) Signal and Power Integrity; 3) Intra-System EMI and RF Desense; 4) Photonics-Based Microwave Measurement; and 5) Hardware Security, Safety and Trust. Underlying noise physics and coupling mechanisms will be studied for various issues such as radiated electromagnetic interference, electrostatic discharge, radio-frequency interference, and hardware security. Based on the gained understanding, engineering design tools, models and methodologies for achieving ESD-robust, immunity-enhanced, SI/PI-ensured, EMI and noise mitigated, safe and secured design will be investigated, developed, and dissimilated throughout the industry. The CEMC will continue serving as a resource center for the EMC community, facilitating research collaborations, disseminating results, and transferring knowledge.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

电磁兼容性（EMC）和信号/电源完整性（SI/PI）问题会显著降低现代电子系统的可靠性、增加成本并延迟开发进度。EMC设计确保电子系统可以在存在外部电磁噪声的情况下正常工作，同时其辐射电磁干扰不会影响其他设备的功能。 SI/PI设计确保电路在高速下正常工作。良好的EMC/SI/PI设计对于成功的产品开发和客户满意度至关重要。电磁兼容中心的使命是支持EMC/SI/PI研究和教育项目，目标是开发解决当今EMC/SI/PI问题和解决未来EMC/SI/PI问题所需的知识库、工具和人员。在互联网和信息时代，推进EMC/SI/PI技术具有重大的社会影响，可以显著提高美国的经济竞争力。中心的研究活动可以为5G无线、自动驾驶、智慧城市等新技术带来硬件层面的颠覆性进步，并且可以对人类社会产生深远的影响，提高国家安全，因为我们的社会更加依赖于数据连接和万物互联。 随着新兴技术趋势的发展，对EMC/SI/PI研究和教育的需求迅速增长。 不仅由于更高的数据速率、更大的设计密度和更低的功耗而出现新的挑战，而且还需要新的范围来解决诸如高频EMC测量的新方法和硬件相关的安全问题等问题。 EMC在实现和支持技术革命和发展方面变得至关重要。NSF IUCRC电磁兼容性中心（CEMC）在第三阶段将重点关注五个主要领域：1）EMI，ESD和抗扰度; 2）信号和电源完整性; 3）系统内EMI和RF灵敏度; 4）基于光子的微波测量;以及5）硬件安全，安全和信任。 将针对辐射电磁干扰、静电放电、射频干扰和硬件安全等各种问题研究潜在的噪声物理和耦合机制。 基于所获得的理解，工程设计工具，模型和方法，以实现ESD鲁棒，免疫增强，SI/PI确保，EMI和噪声减轻，安全和可靠的设计将在整个行业进行研究，开发和异化。CEMC将继续作为EMC社区的资源中心，促进研究合作，传播成果和转移知识。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Body‐loop related MRI radiofrequency‐induced heating hazards: Observations, characterizations, and recommendations

身体循环相关 MRI 射频引起的加热危害：观察、特征和建议

• DOI: 10.1002/mrm.28954
• 发表时间: 2021
• 期刊: Magnetic Resonance in Medicine
• 影响因子: 3.3
• 作者: Yang, Xiaolin;Zheng, Jianfeng;Wang, Yu;Long, Stuart A.;Kainz, Wolfgang;Chen, Ji
• 通讯作者: Chen, Ji

Magnetic resonance conditionality of abandoned leads from active implantable medical devices at 1.5 T

1.5 T 下有源植入式医疗器械废弃导线的磁共振条件

• DOI: 10.1002/mrm.28967
• 发表时间: 2021
• 期刊: Magnetic Resonance in Medicine
• 影响因子: 3.3
• 作者: Wang, Yu;Guo, Ran;Hu, Wei;Zheng, Jianfeng;Wang, Qingyan;Jiang, Jay;Kurpad, Krishna K. N.;Kaula, Norbert;Long, Stuart;Chen, Ji
• 通讯作者: Chen, Ji

A Cascaded Heterogeneous Equivalent Network for Evaluating RF-Induced Hazards on Active Implantable Medical Devices

用于评估有源植入医疗设备上射频诱发危害的级联异构等效网络

• DOI: 10.1109/temc.2021.3121203
• 发表时间: 2021
• 期刊: IEEE Transactions on Electromagnetic Compatibility
• 影响因子: 2.1
• 作者: Liu, Jingshen;Wang, Yu;Guo, Ran;Wang, Qingyan;Zheng, Jianfeng;Kurpad, Krishna;Kainz, Wolfgang;Chen, Ji
• 通讯作者: Chen, Ji

Dual-Frequency High-Electric-Field Generator for MRI Safety Testing of Passive Implantable Medical Devices

用于无源植入医疗器械 MRI 安全测试的双频强电场发生器

• DOI: 10.1109/tmtt.2020.3030789
• 发表时间: 2020
• 期刊: IEEE Transactions on Microwave Theory and Techniques
• 影响因子: 4.3
• 作者: Song, Shuo;Zheng, Jianfeng;Wang, Yu;Wang, Qingyan;Kainz, Wolfgang;Long, Stuart A.;Chen, Ji
• 通讯作者: Chen, Ji

Reducing MRI RF-induced heating for the external fixation using capacitive structures

使用电容结构减少 MRI 射频引起的外部固定发热

• DOI: 10.1088/1361-6560/ab9706
• 发表时间: 2020
• 期刊: Physics in Medicine & Biology
• 影响因子: 3.5
• 作者: Zheng, Jianfeng;Yang, Rui;Wang, Qingyan;Guo, Ran;Xu, Jian;Shou, Xingxian;Kainz, Wolfgang;Chen, Ji
• 通讯作者: Chen, Ji