CAREER: Toward sub-60-mV/decade steep transistors using Dirac-source carrier injection and high-mobility 2D monochalcogenides

题目：基于dirac源载流子注入和高迁移率单硫族的二维高性能陡峭晶体管。非技术摘要：下一代量子技术要求新型纳米电子器件能够以更快的开关速度和更低的能耗运行。目前，由热离子发射驱动的硅基金属氧化物半导体场效应晶体管，需要至少60 mV的栅极电压才能在室温下将电流提高一个数量级。陡坡晶体管，如隧道晶体管和铁电负电容晶体管，能够切换速度超过60 mV/ 10年的限制，但它们在实际应用中面临着自己的挑战和问题。为了应对这些挑战，本研究的重点是研究一种新的陡坡器件概念，即狄拉克源晶体管，它由二维石墨烯和新兴的高迁移率单硫族化合物组成。具体来说，(i)对基于石墨烯的狄拉克源载流子注入机制的基本理解，（ii）单硫族化合物作为通道材料的合成技术和电子特性的研究，以及（iii）陡坡狄拉克源晶体管的演示。这个由量子力学在纳米尺度上提出的解决方案被认为是将摩尔定律很好地扩展到量子时代的一种很有前途的技术。该项目通过密切整合研究、教育和外展计划，提出活动，并涉及整个大学和当地社区的实体，重点是量子纳米材料和纳米电子学。拟议的基础和多学科项目不仅代表了二维材料研究领域的最先进技术，而且还为教育本科生和研究生提供了极好的培训计划，并为K-12，女性和STEM学科中代表性不足的少数民族学生提供了外展服务，以满足国家的劳动力需求。随着互补金属氧化物半导体（CMOS）的小型化接近其物理极限，迫切需要新的技术来扩展电子系统在功率、速度和密度等方面的性能。所提出的狄拉克源陡峭型晶体管是一种新颖的器件概念，它能够在小于0.5 V的电源电压下工作，并且开关速度超过60 mV/ 10的极限。这种优异的性能归功于二维石墨烯和半导体单硫族化合物通过独特的狄拉克源载流子注入机制在其范德华异质结构中协同结合。该研究方法将理论模拟和实验演示相结合，以追求最终成果：(i)对狄拉克源载流子注入机制的基本理解；（ii）新兴二维半导体单硫族化合物的高分辨率数据库和工程原理；（iii）具有陡峭亚阈值斜率和低能耗的逻辑器件的原型演示。提出的研究的智力意义包括提供创新的解决方案（狄拉克源载流子注入），以满足节能电子器件的需求，探索新兴二维半导体通道材料（单硫族化合物）基于其独特的结构和性能的未开发潜力，并代表量子科学和技术的重大突破，将摩尔定律很好地扩展到量子时代。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Proposal TitleTwo-dimensional high-performance steep transistors using Dirac-source carrier injection and high-mobility monochalcogenidesNon-Technical AbstractNext-generation quantum technologies demand for novel nanoelectronic devices that can operate at faster switching speed and with less energy consumption. Currently, silicon-based metal-oxide-semiconductor field-effect transistors, driven by thermionic emission, require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Steep slope transistors such as tunneling transistors and ferroelectric negative capacitance transistors are capable of switching faster than the limit of 60 mV/decade, but they suffer their own challenges and issues for practical applications. To address these challenges, the proposed research focuses on investigation of a novel steep-slope device concept, known as the Dirac-source transistor, which is composed of two-dimensional graphene and emerging high-mobility monochalcogenides. Specifically, (i) fundamental understanding of a graphene-based Dirac-source carrier injection mechanism, (ii) investigation of synthesis technology and electronic properties of the monochalcogenides as the channel materials, and (iii) demonstration of a steep-slope Dirac-source transistors. The proposed solution governed by quantum mechanics on the nanometer scale is foreseen as a promising technique for extending Moore’s Law well into the quantum era. This project proposes events and involves entities across the university and local communities through close integration of research, education, and outreach programs with the focus on quantum nanomaterials and nanoelectronics. The proposed fundamental and multidisciplinary project will not only represent the state-of-the-art technology in the 2D material research field, but also provide an excellent training initiative for educating both undergraduate and graduate students, and for outreaching to K-12, women, and underrepresented minority students in STEM disciplines to fulfill the nation’s workforce needs.Technical AbstractAs the miniaturization of complementary metal-oxide-semiconductor (CMOS) approaches its physical limitation, new technologies are critically needed to extend the performance of electronic systems in terms of power, speed, and density, etc. The proposed Dirac-source steep transistor is considered as a novel device concept, which is capable of working at a supply voltage less than 0.5 V and switching faster than the limit of 60 mV/decade. Such excellent performance is attributed to a synergetic combination of two-dimensional graphene and semiconducting monochalcogenides through the unique Dirac-source carrier injection mechanism in their van der Waals heterostructure. The research approach combines both theoretical simulation and experimental demonstration to pursue the final deliverables: (i) a fundamental understanding of the Dirac-source carrier injection mechanism; (ii) a high-resolution database and engineering principle of the emerging 2D semiconducting monochalcogenides; and (iii) a prototypical demonstration of the logic devices with steep subthreshold slope and low energy consumption. The intellectual significance of the proposed research includes providing innovative solution (Dirac-source carrier injection) to address the need of energy-efficient electronic devices, exploring the untapped potential of emerging two-dimensional semiconducting channel materials (monochalcogenides) based on their unique structure and properties, and representing a major breakthrough in quantum science and technology for extending Moore’s law well into the quantum era.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.