Rubbing-Induced Site-Selective Patterning for Two-Dimensional Dichalcogenide Devices

二维二硫属化物器件的摩擦诱导位点选择性图案化

• 批准号: 2001036
• 负责人: Xiaogan Liang
• 金额: $ 40.59万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-07-01 至 2024-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2001036&HistoricalAwards=false
• 关键词: Rubbing; Induced; Site; Selective; Patterning

This grant supports research that advances critical knowledge for manufacturing electronic devices based on emerging nanomaterials, helping advance U.S. industrial competitiveness and national prosperity. Two-dimensional nanomaterials, such as transition metal dichalcogenides, could be exploited to make a broad range of electronic and photonic devices with superior functionalities. For example, dichalcogenides such as molybdenum disulfide, can be used to make flexible and wearable devices, biosensors for rapid illness diagnosis, and energy-efficient photodetectors. Although prototypes of these dichalcogenide devices have been demonstrated in the laboratory, the device community still lacks suitable technologies for realizing scalable nanomanufacturing of such devices. One of the most critical challenges is the vulnerability of dichalcogenides to the existing lithography and etching processes for manufacturing electronic devices. This award supports fundamental research to explore imperative knowledge supporting a new manufacturing technology involving site-selective patterning that enables reliable production of dichalcogenide device structures without involving processes that are detrimental to dichalcogenides. The high-quality dichalcogenide device structures produced by this technology are highly desirable for device applications in electronic, sensor, energy storage, and optoelectronic industries. This research enhances participation of underrepresented groups in the education activities related to advanced manufacturing. The new manufacturing technology, termed rubbing-induced site-selective (RISS) patterning, involves a controllable rubbing process for generating nano- or microscale triboelectric charge patterns on a substrate and a subsequent two-dimensional nanomaterial chemical vapor deposition process. The triboelectric charge patterns modulate the nucleation of material deposition precursors on the target substrate and enables direct formation of dichalcogenide device patterns at designated site-selective locations without the need for additional resist-based lithography and plasma etching, which can introduce irreversible contamination and damage to the dichalcogenide layered structure. However, scientific questions need to be answered to make RISS technology practical for manufacturing commercially viable dichalcogenide devices. This research is to understand the mechanisms related to the generation and control of triboelectric charge patterns as well as material deposition processes modulated by electric fields. The research team plans to establish a theoretical-experimental integrated methodology for designing rubbing templates, which can generate high-contrast triboelectric charge patterns under designated mechanical conditions. The research approach is to fabricate rationally designed rubbing templates using focused ion beam and atomic force microscope lithography techniques, experimentally identify mechanical conditions that generate high-contrast triboelectric charge patterns, perform modeling of material diffusion guided by triboelectric field and demonstrate production of arrays of dichalcogenide-based memristive devices for neuromorphic computing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该补助金支持基于新兴纳米材料制造电子设备的关键知识的研究，帮助提高美国的工业竞争力和国家繁荣。二维纳米材料，如过渡金属二硫属化物，可以用来制造具有上级功能的广泛的电子和光子器件。例如，二硫化钼等二硫属化物可用于制造柔性和可穿戴设备，用于快速疾病诊断的生物传感器和节能光电探测器。尽管这些二硫属化物器件的原型已经在实验室中得到了展示，但器件界仍然缺乏用于实现此类器件的可扩展纳米制造的合适技术。最关键的挑战之一是二硫属化物对用于制造电子器件的现有光刻和蚀刻工艺的脆弱性。该奖项支持基础研究，以探索必要的知识，支持新的制造技术，包括位点选择性图案化，使二硫属化物器件结构的可靠生产，而不涉及对二硫属化物有害的工艺。通过该技术生产的高质量二硫属化物器件结构对于电子、传感器、能量存储和光电工业中的器件应用是非常期望的。这项研究增强了代表性不足群体对先进制造业相关教育活动的参与。 新的制造技术，称为摩擦诱导的位点选择性（RISS）图案化，涉及可控的摩擦过程，用于在衬底上产生纳米或微米级的摩擦电荷图案，以及随后的二维纳米材料化学气相沉积过程。摩擦电荷图案调节材料沉积前体在目标衬底上的成核，并且使得能够在指定的位点选择性位置处直接形成二硫属化物器件图案，而不需要额外的基于抗蚀剂的光刻和等离子体蚀刻，这可能对二硫属化物分层结构引入不可逆的污染和损坏。然而，科学问题需要得到回答，使RISS技术实际用于制造商业上可行的二硫属化物设备。本研究旨在了解摩擦电荷模式的产生与控制机制，以及电场对材料沉积过程的影响。该研究小组计划建立一种理论-实验集成方法来设计摩擦模板，该模板可以在指定的机械条件下产生高对比度的摩擦电荷图案。研究方法是利用聚焦离子束和原子力显微镜光刻技术制作合理设计的摩擦模板，实验确定产生高对比度摩擦电荷图案的力学条件，执行由摩擦电场引导的材料扩散的建模，并演示二硫属化物阵列的生产，该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Multiplexing implementation of rubbing-induced site-selective growth of MoS 2 feature arrays

MoS 2 特征阵列摩擦诱导位点选择性生长的多重实现

• DOI: 10.1116/6.0001268
• 发表时间: 2021
• 期刊: Journal of Vacuum Science & Technology B
• 影响因子: 1.4
• 作者: Chen, Mingze;Ki, Seung;Liang, Xiaogan
• 通讯作者: Liang, Xiaogan

Fabrication of microstructures on curved hydrogel substrates

• DOI: 10.1116/6.0002071
• 发表时间: 2022-09
• 期刊: Journal of Vacuum Science & Technology B
• 作者: M. Chen;X. Ding;L. Que;X. Liang

Optoelectronic performance characterization of MoS 2 photodetectors for low frequency sensing applications

用于低频传感应用的 MoS 2 光电探测器的光电性能表征

• DOI: 10.1116/6.0001280
• 发表时间: 2021
• 期刊: Journal of Vacuum Science & Technology B
• 影响因子: 1.4
• 作者: Ki, Seungjun;Chen, Mingze;Liang, Xiaogan
• 通讯作者: Liang, Xiaogan