Rubbing-Induced Site-Selective Patterning for Two-Dimensional Dichalcogenide Devices

该基金支持基于新兴纳米材料制造电子设备的关键知识的研究，帮助提高美国的工业竞争力和国家繁荣。二维纳米材料，如过渡金属二硫族化合物，可以用来制造具有优越功能的广泛的电子和光子器件。例如，二硫化钼等二硫化物可用于制造柔性和可穿戴设备，用于快速疾病诊断的生物传感器和节能光电探测器。虽然这些二硫化物器件的原型已经在实验室中得到了证明，但器件界仍然缺乏实现这种器件的可扩展纳米制造的合适技术。最关键的挑战之一是二硫族化合物易受现有的光刻和蚀刻工艺的影响。该奖项支持基础研究，以探索支持涉及位点选择模式的新制造技术的必要知识，该技术能够可靠地生产双卤代烃器件结构，而不涉及对双卤代烃有害的工艺。该技术生产的高质量二硫化物器件结构在电子、传感器、储能和光电子行业的器件应用中是非常理想的。这项研究提高了未被充分代表的群体在先进制造业相关教育活动中的参与。新的制造技术，被称为摩擦诱导位点选择（RISS）图图化，涉及一个可控的摩擦过程，用于在衬底上产生纳米或微尺度的摩擦电荷图案，以及随后的二维纳米材料化学气相沉积过程。摩擦电荷模式调节了目标衬底上材料沉积前体的成核，并且能够在指定的选择性位置直接形成二卤代烃器件模式，而不需要额外的电阻基光刻和等离子体蚀刻，这可能会对二卤代烃层状结构造成不可逆的污染和破坏。然而，要使RISS技术用于制造商业上可行的二硫化物装置，还需要回答一些科学问题。本研究旨在了解与摩擦电荷模式的产生和控制以及电场调制的材料沉积过程有关的机制。研究小组计划建立一种理论-实验集成的方法来设计摩擦模板，该模板可以在指定的机械条件下产生高对比度的摩擦电荷模式。研究方法是利用聚焦离子束和原子力显微镜光刻技术制造合理设计的摩擦模板，实验确定产生高对比度摩擦电荷模式的机械条件，进行摩擦电场引导下的材料扩散建模，并演示用于神经形态计算的基于二硫元的记忆器件阵列的生产。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

This grant supports research that advances critical knowledge for manufacturing electronic devices based on emerging nanomaterials, helping advance U.S. industrial competitiveness and national prosperity. Two-dimensional nanomaterials, such as transition metal dichalcogenides, could be exploited to make a broad range of electronic and photonic devices with superior functionalities. For example, dichalcogenides such as molybdenum disulfide, can be used to make flexible and wearable devices, biosensors for rapid illness diagnosis, and energy-efficient photodetectors. Although prototypes of these dichalcogenide devices have been demonstrated in the laboratory, the device community still lacks suitable technologies for realizing scalable nanomanufacturing of such devices. One of the most critical challenges is the vulnerability of dichalcogenides to the existing lithography and etching processes for manufacturing electronic devices. This award supports fundamental research to explore imperative knowledge supporting a new manufacturing technology involving site-selective patterning that enables reliable production of dichalcogenide device structures without involving processes that are detrimental to dichalcogenides. The high-quality dichalcogenide device structures produced by this technology are highly desirable for device applications in electronic, sensor, energy storage, and optoelectronic industries. This research enhances participation of underrepresented groups in the education activities related to advanced manufacturing. The new manufacturing technology, termed rubbing-induced site-selective (RISS) patterning, involves a controllable rubbing process for generating nano- or microscale triboelectric charge patterns on a substrate and a subsequent two-dimensional nanomaterial chemical vapor deposition process. The triboelectric charge patterns modulate the nucleation of material deposition precursors on the target substrate and enables direct formation of dichalcogenide device patterns at designated site-selective locations without the need for additional resist-based lithography and plasma etching, which can introduce irreversible contamination and damage to the dichalcogenide layered structure. However, scientific questions need to be answered to make RISS technology practical for manufacturing commercially viable dichalcogenide devices. This research is to understand the mechanisms related to the generation and control of triboelectric charge patterns as well as material deposition processes modulated by electric fields. The research team plans to establish a theoretical-experimental integrated methodology for designing rubbing templates, which can generate high-contrast triboelectric charge patterns under designated mechanical conditions. The research approach is to fabricate rationally designed rubbing templates using focused ion beam and atomic force microscope lithography techniques, experimentally identify mechanical conditions that generate high-contrast triboelectric charge patterns, perform modeling of material diffusion guided by triboelectric field and demonstrate production of arrays of dichalcogenide-based memristive devices for neuromorphic computing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.