Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)

我们将探索石墨烯中的基本电荷输运机制，依靠我们的材料系统的特定优势，即均匀性，大规模可用性和界面衬底-石墨烯的外延控制。我们将研究低温电荷输运，在那里我们将描述电子-电子-相互作用的修正。通过精细化的数据分析，我们将获得对近藤效应的敏感性，从而可以找到一个近藤系统。通过控制结构缺陷的加入，我们将研究从带输运到跳输运的转变。特别强调了双层石墨烯中的相互作用效应。在第二行实验中，我们将通过局部选择性插层（即不使用金属栅电极）的方式，对石墨烯层中的化学势进行横向图案化。这将为新的实验铺平道路。

We will explore fundamental charge transport mechanisms in graphene, relying on the specific strengths of our material system, that is homogeneity, large-scale availability, and epitaxial control on the interface substrate-graphene.We will investigate low-temperature charge transport, where we will characterize the electron-electron-interaction corrections. By means of a refined data analysis, we will gain sensitivity to Kondo effect, which may allow to find a Kondo system. By controlled addition of structural defects we willstudy the transition from band transport to hopping transport. Special emphasis is on interaction effects in bilayer graphene. In a second line of experiments, we will pattern the chemical potential in the graphene layer laterally by means of locally selective intercalation, i.e. without the use of metallic gate electrodes. This will pave the way for novel experiments.