Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)

我们将探索石墨烯中基本的电荷传输机制，依靠我们材料系统的特定优势，即均匀性，大规模可用性和界面衬底石墨烯的外延控制。我们将研究低温电荷传输，其中我们将表征电子-电子相互作用校正。通过精细的数据分析，我们将获得对Kondo效应的敏感性，这可能允许找到Kondo系统。通过控制结构缺陷的加入，我们将研究从能带输运到跳跃输运的转变.特别强调的是在双层石墨烯的相互作用的影响。在第二行实验中，我们将通过局部选择性嵌入，即不使用金属栅电极，横向图案化石墨烯层中的化学势。这将为新的实验铺平道路。

We will explore fundamental charge transport mechanisms in graphene, relying on the specific strengths of our material system, that is homogeneity, large-scale availability, and epitaxial control on the interface substrate-graphene.We will investigate low-temperature charge transport, where we will characterize the electron-electron-interaction corrections. By means of a refined data analysis, we will gain sensitivity to Kondo effect, which may allow to find a Kondo system. By controlled addition of structural defects we willstudy the transition from band transport to hopping transport. Special emphasis is on interaction effects in bilayer graphene. In a second line of experiments, we will pattern the chemical potential in the graphene layer laterally by means of locally selective intercalation, i.e. without the use of metallic gate electrodes. This will pave the way for novel experiments.