Solution-Processed Silicon Thin Films and Electron Devices from Polysilane Precursors

该项目的主要目标是从溶解和配制的聚硅烷前体沉积硅薄膜，并将该层集成到电子应用中。与液相沉积的其他无机材料相比，硅应该在基本器件参数方面具有优势（例如载流子迁移率）、稳定性和可靠性，以及材料参数的可控性（例如兴奋剂）。拟议项目的科学挑战是在以下方面取得重大进展：用于旋转浇铸、喷射浇铸或印刷技术的环硅烷和聚硅烷前体溶液的合成的再现性和产率，-硅烷分子的官能度。该提议的一种新方法是合成多官能硅烷分子，其在层转变期间提供原位掺杂或结晶增强的能力，以及将沉积的前体膜转变成满足印刷电子制造要求的无定形、纳米或多晶硅膜。我们将详细研究>热退火和光子退火，以减少基板中的能量耗散，使加工适合于技术玻璃或塑料基板，>利用金属诱导结晶技术降低薄膜加工的总体热预算。金属诱导结晶应用于从聚硅烷前体预沉积的非晶薄膜，以及通过在分子合成或油墨配方期间引入活性物质直接集成到前体转化中。非晶和多晶硅薄膜的适用性通过制备选定的单极和双极电子器件，即薄膜晶体管和太阳能电池来证明。因此，该项目的工艺活动旨在优化硅薄膜相对于目标器件的电子特性，即缺陷控制，电荷传输以及掺杂。在硅化学（TU BA弗赖贝格）和器件和工艺技术（FAU埃尔兰根）领域具有杰出专业知识的两个研究所将在该项目上密切合作。

The deposition of silicon thin films from dissolved and formulated polysilane precursors and the integration of the layers into electronic applications are the main goals of the proposed project.In comparison to other inorganic materials from liquid-phase deposition, silicon is supposed to offer advantages in terms of fundamental device parameters (e.g. carrier mobilities), stability and reliability, as wellas controllability of material parameters (e.g. doping).The scientific challenges of the proposed project are significant improvements in- reproducibility and yield of the synthesis of cyclosilane and polysilane precursor solutions for application in spin casting, spray casting or printing techniques,- the functionality of silane molecules. A novel approach of this proposal is the synthesis of multi-functional silane molecules delivering the capability of in situ doping or crystallization enhancement during layer transformation, as well as- the transformation of the deposited precursor films into amorphous, nano-, or polycrystalline silicon films meeting the requirements of printed electronics manufacturing. In detail we will investigate> thermal and photonic annealing for reduced energy dissipation into the substrate, making the processing suited for technical glasses or plastic substrates,> utilization of metal-induced crystallization techniques lowering the overall thermal budget of thin-film processing. Metal-induced crystallization is applied to pre-deposited amorphous films from polysilane precursors as well as directly integrated into the precursor transformation by incorporation of active species during molecule synthesis or ink formulation.The applicability of the amorphous and polysilicon thin films is demonstrated by preparation of selected unipolar and bipolar electron devices, namely thin-film transistors and solar cells. Consequently, the processing activities of the proposal aim at an optimization of the electronic properties of the silicon thin films with respect to the target devices, i.e. defect control, charge transport, as well as doping.Two institutes with outstanding expertise in the areas of silicon chemistry (TU BA Freiberg) and devices and process technology (FAU Erlangen) will closely cooperate on this project.