Collaborative Research: ECCS-EPSRC: Nitride Super-Junction HEMTs for Robust, Efficient, Fast Power Switching

合作研究：ECCS-EPSRC：用于稳健、高效、快速功率开关的氮化物超级结 HEMT

• 批准号: 2036740
• 负责人: Yuhao Zhang
• 金额: $ 23万
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-02-01 至 2024-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2036740&HistoricalAwards=false
• 关键词: Collaborative; Research; ECCS; EPSRC; Nitride

Award AbstractProposal Number: 2036740 & 2036915Principal Investigator: Yuhao Zhang and Han Wang (co-PI)Title: Collaborative Research: ECCS-EPSRC: Nitride Super-Junction HEMTs for Robust, Efficient, Fast Power SwitchingInstitution: Virginia Polytechnic Institute and State University (Lead) and University of Southern CaliforniaNon-Technical Abstract:Power semiconductor devices are regularly utilized as solid-state switches in power electronic systems that are widely used in consumer electronics, data centers, electric vehicles, electricity grid, and renewable energy systems. The global power device market exceeds $15 billion in 2019 and is fast growing. Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are commonly perceived as the next generation of power devices. Despite their initial commercialization recently, their wide adoption in industrial applications is hindered by the limitation in reliability and robustness, resulting in considerable over design, rendering device performance far below the material limit. This project will develop a new generation of robust, charge-balanced GaN HEMTs through innovation in the semiconductor materials and device structure. Interdisciplinary research will be carried out in materials, devices, fabrication processes, and circuit-level tests through collaboration between Virginia Tech and the University of Southern California in the United States, as well as University of Cambridge in United Kingdom under the “NSF Engineering - UKRI Engineering and Physical Sciences Research Council Lead Agency Opportunity (ENG-EPSRC)”. This US-UK collaborative project provides opportunities for student education and international exchange, development of cross-university teaching modules, and industrial collaboration for potential technology transfer. This interdisciplinary, cross-continent project also involves outreach activities for K-12 students and teachers, and promotes educational activities related to microelectronics and power electronics technologies.Technical Abstract:This overarching hypothesis is that robust gallium nitride (GaN) high-electron-mobility transistors (HEMTs) can be implemented by selective-area, nearly defect-free embedding of p-type regions into the two-dimensional electron gas (2DEG) channel, forming a novel charge-balanced super-junction structure. This novel 2D-3D super-junction structure can not only enhance the device robustness by managing the electric field and avalanche capability, but also allow significantly higher 2DEG density while maintaining the normally-off operation, thereby decreasing the device specific on-resistance and boosting its switching frequency. Despite these promises, major gaps exist in the device physics of the novel super-junction, interfacial material properties, and the dynamic performance of super-junction HEMTs in power electronic circuits. Funded by the “NSF Engineering - UKRI Engineering and Physical Sciences Research Council Lead Agency Opportunity (ENG-EPSRC)”, this project aims to address the scientific knowledge gaps in four relevant areas through the US-UK research collaboration: (a) to explore the design space and performance limits of the novel super-junction HEMT device; (b) to probe new methods of selectively introducing p-type dopants into the 2DEG channel to realize the super-junction functionality; (c) to develop an in-depth understanding of the dopant profiles, carrier transport, and trap dynamics in the nitride super-junction structure; and (d) to correlate the nano/mesoscale materials and interface properties with the dynamic characteristics and robustness of GaN HEMTs.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

获奖摘要提案编号：2036740& 2036915主要研究者：Yuhao Zhang和Han Wang（co-PI）标题：合作研究：ECCS-EPSRC：用于鲁棒、高效、快速功率开关的氮化物超结HEMT机构：弗吉尼亚理工学院和州立大学（牵头）以及南加州大学非技术摘要：功率半导体器件通常用作电力电子系统中的固态开关，该电力电子系统广泛用于消费电子、数据中心、电动车辆、电网，和可再生能源系统。全球功率器件市场在2019年超过150亿美元，并且正在快速增长。氮化镓（GaN）高电子迁移率晶体管（HEMT）通常被认为是下一代功率器件。尽管它们最近开始商业化，但它们在工业应用中的广泛采用受到可靠性和鲁棒性的限制，导致相当大的过度设计，使设备性能远远低于材料限制。该项目将通过半导体材料和器件结构的创新，开发新一代强大的电荷平衡GaN HEMT。跨学科研究将通过弗吉尼亚理工大学与美国南加州大学以及英国剑桥大学之间的合作，在“NSF工程- UKRI工程和物理科学研究理事会牵头机构机会（ENG-EPSRC）"下，在材料、器件、制造工艺和电路级测试方面进行。这个美英合作项目为学生教育和国际交流，跨大学教学模块的开发以及潜在技术转让的行业合作提供了机会。这个跨学科、跨大洲的项目还包括为K-12学生和教师开展的外展活动，并促进与微电子和电力电子技术相关的教育活动。技术摘要：这一总体假设是，强大的氮化镓（GaN）高电子迁移率晶体管（HEMT）可以通过选择性区域、几乎无缺陷地将p型区域嵌入到二维电子气（2DEG）沟道中来实现，形成一种新颖的电荷平衡超结结构。这种新颖的2D-3D超结结构不仅可以通过管理电场和雪崩能力来增强器件的鲁棒性，而且还允许显著更高的2DEG密度，同时保持常关操作，从而降低器件的比导通电阻并提高其开关频率。尽管有这些承诺，主要差距存在于器件物理的新型超结，界面材料的性能，和功率电子电路中的超结HEMT的动态性能。由“NSF工程- UKRI工程和物理科学研究理事会牵头机构机会”资助（ENG-EPSRC）"，此项目旨在透过美英研究合作，解决四个相关范畴的科学知识差距：（a）探索新型超结HEMT器件的设计空间和性能极限;（B）探索将p型掺杂剂选择性地引入到2DEG沟道中以实现超结功能的新方法;（c）深入了解氮化物超结结构中的掺杂剂分布、载流子输运和陷阱动力学;以及（d）将纳米/中尺度材料和界面特性与GaN HEMT的动态特性和鲁棒性相关联。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

A perspective on multi-channel technology for the next-generation of GaN power devices

下一代 GaN 功率器件多通道技术的视角

• DOI: 10.1063/5.0086978
• 发表时间: 2022
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Nela, Luca;Xiao, Ming;Zhang, Yuhao;Matioli, Elison
• 通讯作者: Matioli, Elison

10 kV GaN Power Diodes and Transistors with Performance beyond SiC Limit

性能超越 SiC 极限的 10 kV GaN 功率二极管和晶体管

• DOI: 10.1109/edtm53872.2022.9797920
• 发表时间: 2022
• 期刊: 10 kV GaN Power Diodes and Transistors with Performance beyond SiC Limit
• 作者: Zhang, Yuhao;Xiao, Ming;Ma, Yunwei;Cheng, Kai
• 通讯作者: Cheng, Kai

First Demonstration of Vertical Superjunction Diode in GaN

GaN 垂直超结二极管的首次演示

• DOI: 10.1109/iedm45625.2022.10019405
• 发表时间: 2022
• 期刊: First Demonstration of Vertical Superjunction Diode in GaN
• 作者: Xiao, Ming;Ma, Yunwei;Du, Zhonghao;Qin, Yuan;Liu, Kai;Cheng, Kai;Udrea, Florin;Xie, Andy;Beam, Edward;Wang, Boyan
• 通讯作者: Wang, Boyan

Tri-Gate GaN Junction HEMTs: Physics and Performance Space

三栅 GaN 结 HEMT：物理和性能空间

• DOI: 10.1109/ted.2021.3103157
• 发表时间: 2021
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Ma, Yunwei;Xiao, Ming;Du, Zhonghao;Wang, Han;Zhang, Yuhao
• 通讯作者: Zhang, Yuhao

(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV

（特邀）多通道 AlGaN/GaN 功率整流器：高达 10 kV 的突破性性能

• DOI: 10.1149/10404.0051ecst
• 发表时间: 2021
• 期刊: ECS Transactions
• 作者: Zhang, Yuhao;Xiao, Ming;Ma, Yunwei;Du, Zhonghao;Wang, Han;Xie, Andy;Beam, Edward;Cao, Yu;Cheng, Kai
• 通讯作者: Cheng, Kai