Collaborative Research: Chalcogenide Perovskite Light Emitting Diodes to Fill the Green Gap

合作研究：硫属化物钙钛矿发光二极管填补绿色空白

• 批准号: 2042085
• 负责人: Hao Zeng
• 金额: $ 37.88万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-05-01 至 2025-04-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2042085&HistoricalAwards=false
• 关键词: Collaborative; Research; Chalcogenide; Perovskite; Light

Solid-state lighting plays a central role in substantially reducing the amount of energy consumption. The efficiency of current LEDs drastically decreases from ∼80% in the blue-light regions to ∼15% in the green region. This lack of a suitable semiconductor green light source is known as the “green gap” problem. This research aims to address this problem by developing green LEDs based on an entirely new family of semiconductor materials called chalcogenide perovskite. The proposed work is a critical step towards opening a new frontier in semiconductor device research based on chalcogenide perovskites, with far reaching impacts on applications such as sensing, energy harvesting, information processing, and storage. The use of earth-abundant elements in these materials can reduce our nation’s reliance on rare-earth materials. Through collaboration with local industry, the proposed work will also develop samples and instrumentation for advanced laboratory courses, which will not only impact STEM education in the US and worldwide, but also the local economy in Western New York. The research activities involving machine learning, first-principles computation, material synthesis, device fabrication, and characterization, will offer important interdisciplinary training to a diversified student body through targeted recruiting from underrepresented groups.This proposal aims to demonstrate the first chalcogenide perovskite-based light emitting diodes, with the long-term goal of bridging the green gap in LED technology. This will involve an iterative process in which theoretical prediction will guide material synthesis and atomic level structural, optical, and carrier transport characterization will inform theoretical models as well as device design and fabrication. The idea of this work was conceived based on the principal investigators' recent prediction and realization of chalcogenide perovskite materials with tunable band gap and promising semiconducting properties. The specific project objectives are to: i) Develop a low temperature chalcogenide perovskite thin-film processing technique compatible with device fabrication and growing high quality SrHfS3 and SrZrS3 thin films with strong green and amber light emission. ii) Control device properties through concerted first-principles computation and experiments of atomic scale structural, optical, and carrier transport characteristic. iii) Design, fabricate, and evaluate green and amber LEDs from n- and p- type doped SrHfS3 and SrZrS3 thin films. An innovative device fabrication technique incorporating micro-transfer-printing allows for dissimilar materials to form a high-quality p-i-n type LED structure with extremely clean interfaces without being constrained by their growth conditions.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

固态照明在大幅降低能源消耗方面发挥着核心作用。 当前LED的效率从蓝光区的约80%急剧下降到绿色区的约15%。这种缺乏合适的半导体绿色光源的情况被称为“绿色间隙”问题。这项研究的目的是解决这个问题，开发绿色LED的基础上一个全新的家庭半导体材料称为硫族钙钛矿。拟议的工作是朝着基于硫属钙钛矿的半导体器件研究开辟新前沿的关键一步，对传感，能量收集，信息处理和存储等应用产生深远影响。在这些材料中使用地球丰富的元素可以减少我国对稀土材料的依赖。通过与当地行业的合作，拟议的工作还将为高级实验室课程开发样品和仪器，这不仅将影响美国和全球的STEM教育，还将影响纽约西部的当地经济。该研究活动涉及机器学习、第一性原理计算、材料合成、器件制造和表征，将通过有针对性地从代表性不足的群体中招募学生，为多元化的学生群体提供重要的跨学科培训。该提案旨在展示首个硫属钙钛矿基发光二极管，其长期目标是弥合LED技术中的绿色差距。这将涉及一个迭代过程，其中理论预测将指导材料合成，原子级结构，光学和载流子输运特性将为理论模型以及器件设计和制造提供信息。这项工作的想法是基于主要研究人员最近的预测和实现的硫属钙钛矿材料具有可调的带隙和有前途的半导体性能。具体的项目目标是：i）开发一种低温硫属钙钛矿薄膜加工技术，该技术与器件制造和生长具有强绿色和琥珀色发光的高质量SrHfS 3和SrZrS 3薄膜兼容。ii）通过原子尺度结构、光学和载流子输运特性的协调的第一性原理计算和实验来控制器件特性。iii）设计、制造和评估由n型和p型掺杂的SrHfS 3和SrZrS 3薄膜制成的绿色和琥珀色LED。创新的器件制造技术结合微转移印刷技术，使不同的材料能够形成高质量的p-i-n型LED结构，其界面非常干净，而不受生长条件的限制。该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS3 Films

• DOI: 10.3390/photonics10040366
• 发表时间: 2023-03
• 期刊: Photonics
• 影响因子: 2.4
• 作者: S. Dhole;Xiucheng Wei;Haolei Hui;P. Roy;Zachary J Corey;Yongqiang Wang;W. Nie;Aiping Chen;Hao Zeng;Quanxi Jia

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

低温加工硫系钙钛矿BaZrS3薄膜电子和光电器件

• DOI: 10.1016/j.nanoen.2021.105959
• 发表时间: 2021-03-13
• 期刊: NANO ENERGY
• 影响因子: 17.6
• 作者: Yu, Zhonghai;Wei, Xiucheng;Zeng, Hao
• 通讯作者: Zeng, Hao