Collaborative Research: Controlling Process Variability in Bottom-up Nanoelectronic Devices

合作研究：控制自下而上纳米电子器件的工艺变异性

• 批准号: 2106579
• 负责人: Jerry Shan
• 金额: $ 25.02万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-08-01 至 2025-07-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2106579&HistoricalAwards=false
• 关键词: Collaborative; Research; Controlling; Process; Variability

Realizing the new products, systems, and applications promised by the nanotechnology revolution requires the stringency of high-quality manufacturing applied to nanoscale structures. Importantly, no mass-manufactured component, whether a car part, transistor, or commodity chemical, is perfect. Variations in structure (e.g., geometry, composition, etc.), and thus function, are unavoidable. However, by quantitatively understanding these variations and their distribution, a process or product designer can compensate for them. The objective of this project is to secure such knowledge for the case of bottom-up (i.e., additive) nanoelectronic device fabrication. Success of this project promises to enable new electronic technologies that benefit the consumer, industrial, and defense sectors, ranging from desktop-printable integrated circuits to retinal implants for sight restoration. The investigators will carry out multiple educational and outreach activities, ranging from demonstrations at a summer camp for girls to the launch of a new conversational podcast that addresses big challenges in manufacturing.This project will provide fundamental statistical insight into the connection between bottom-up nanoelectronic device processing and device electronic properties using two newly developed high-throughput, non-contact methods. Si nanowire p-n diodes will serve as model electronic components; they are widely used in rectification, sensing, and power-harvesting applications. The vapor-liquid-solid nanowire growth method will allow for systematic control of diode doping profile, nanowire diameter, and surface characteristics and passivation. Solution-based electro-translation and electro-orientation measurements will provide access to the junction and surface properties of individual diodes in an ensemble as a function of key process parameters. The high-throughput, non-contact nature of the electro-translation and electro-orientation techniques will permit the most statistically meaningful characterization to date, and aid in the design of processes that yield nanoelectronic devices with performance superior to, and far better controlled than, the state-of-the-art.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

实现纳米技术革命所承诺的新产品、系统和应用需要严格的高质量制造应用于纳米结构。重要的是，没有一个大规模生产的组件，无论是汽车零件，晶体管还是日用化学品，都是完美的。结构的变化（例如，几何形状、组成等），和功能，是不可避免的。然而，通过定量地了解这些变化及其分布，工艺或产品设计师可以对其进行补偿。本项目的目标是确保自下而上（即，添加剂）纳米电子器件制造。该项目的成功有望实现新的电子技术，使消费者，工业和国防部门受益，从桌面可打印集成电路到用于视力恢复的视网膜植入物。研究人员将开展多种教育和推广活动，从在夏令营中为女孩演示到推出一个新的对话播客，以解决制造业的巨大挑战。该项目将使用两种新开发的高通量非接触方法，为自下而上的纳米电子器件处理和器件电子特性之间的联系提供基本的统计见解。硅纳米线p-n二极管将作为模型电子元件，它们被广泛用于整流，传感和功率收集应用。气-液-固纳米线生长方法将允许系统地控制二极管掺杂分布、纳米线直径以及表面特性和钝化。基于溶液的电平移和电取向测量将提供对集成中单个二极管的结和表面特性的访问，作为关键工艺参数的函数。电平移和电取向技术的高通量、非接触性质将允许迄今为止最有统计学意义的表征，并有助于设计产生性能上级且远优于以下的纳米电子器件的工艺：最新情况该奖项反映了美国国家科学基金会的法定使命，并通过利用基金会的知识价值和更广泛的影响进行评估，被认为值得支持审查标准。