I-Corps: Optimized mm-Wave Transistors for 5G Applications

I-Corps：针对 5G 应用的优化毫米波晶体管

• 批准号: 2126041
• 负责人: Samir El-Ghazaly
• 金额: $ 5万
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-03-15 至 2022-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2126041&HistoricalAwards=false
• 关键词: Corps; Optimized; mm; Wave; Transistors

The broader impact/commercial potential of this I-Corps project is the development of a transistor for better heat dissipation capability for high-frequency semiconductor devices. In general, the demand for millimeter (mm)-wave transistors is steadily increasing. In these devices, electromagnetic wave propagation effects and heat dissipation are among the most limiting factors for production. The proposed technologies in this project are applied to the design and fabrication of optimized mm-wave transistors. These transistors demonstrate superior performance compared to currently available technologies. In addition, the devices have a smaller footprint compared to conventional transistors performing the same functionality. The new designs result in more devices per wafer, and each individual device may be capable of producing higher power and operating over a wider bandwidth. Such performance enhancements may allow savings in cost per component. Moreover, the new transistors may have characteristics enabling them to meet more stringent performance specifications. Subsequently, new systems with advanced functionalities may be designed that will open new market areas.This I-Corps project is based on the development of a fabrication technology that is applicable to high-frequency semiconductor devices. The proposed technology describes novel transistor electrode designs to match the phase velocity of the propagating waves on the input and output electrodes. This enables relaxation of the current limitations on the electrode width, which reduces the number of fingers needed to meet the desired device gain, output power, and other performance parameters. The competitive advantage of the proposed technology is to allow fabricating wider transistors, which provides more radio frequency power. The thermal management issues and their associated challenges in mm-wave transistors also are addressed in this project. The proposed technology modifies the substrates enabling them to act as better heat absorbers by enhancing their overall thermal conductance. The novelty in this technology is founded on improvements in thermal properties of the die to extract the heat generated at the surface and/or in the active layer at the junctions, offering enhanced capabilities for heat removal. Results from research on the analysis of the transistor performances demonstrate the promise of this technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这个I-Corps项目的更广泛的影响/商业潜力是开发一种晶体管，用于高频半导体器件的更好的散热能力。 通常，对毫米（mm）波晶体管的需求正在稳步增长。 在这些器件中，电磁波传播效应和散热是生产的最大限制因素。本计画所提出之技术已应用于最佳化毫米波电晶体之设计与制作。 这些晶体管与当前可用的技术相比表现出上级性能。此外，与执行相同功能的常规晶体管相比，该器件具有更小的占用面积。新的设计导致每个晶片上有更多的器件，每个单独的器件都能够产生更高的功率并在更宽的带宽上工作。这样的性能增强可以允许节省每个组件的成本。此外，新晶体管可具有使其能够满足更严格的性能规格的特性。随后，可能会设计出具有先进功能的新系统，从而打开新的市场领域。I-Corps项目的基础是开发适用于高频半导体器件的制造技术。所提出的技术描述了新颖的晶体管电极设计，以匹配输入和输出电极上的传播波的相速度。这使得能够放宽对电极宽度的电流限制，这减少了满足期望的器件增益、输出功率和其他性能参数所需的指状物的数量。所提出的技术的竞争优势是允许制造更宽的晶体管，这提供了更多的射频功率。在毫米波晶体管的热管理问题及其相关的挑战也在这个项目中得到解决。所提出的技术修改了基板，使它们能够通过增强其整体热导率来充当更好的吸热器。该技术的新颖性建立在管芯的热性能的改进上，以提取在表面处和/或在结处的有源层中产生的热量，从而提供增强的散热能力。晶体管性能分析的研究结果证明了这项技术的前景。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。