EAGER: Investigation of local strain and single photon emitters in two-dimensional materials

EAGER：二维材料中局部应变和单光子发射器的研究

• 批准号: 2128534
• 负责人: Xi Wang
• 金额: $ 15万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-07-01 至 2023-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2128534&HistoricalAwards=false
• 关键词: EAGER; Investigation; local; strain; single

Nontechnical description:Single photon emitters (SPEs), which emit light as single particles (photons), are important light sources for leading quantum information technologies, such as computation, communication, and cryptography. To integrate SPEs with miniaturized devices, many researchers focus on solid-state systems because they can be fabricated and controlled precisely using current nanofabrication techniques. In recent years, SPEs have been reported in two-dimensional (2D) materials, which have only nanometer-scale thicknesses. This greatly expands the possibility of scalable integration of SPEs on a chip. However, the color (energy) of emitted photons is difficult to control because the fundamental principles that govern single photon emission in 2D materials are not entirely understood, leading to SPE behavior that may appear to be random. In this project, the research team develops a specially-designed microscopic device patterned with sharp tips to quantitatively determine how the strength and shape of strain, or mechanical deformation, in 2D materials determines or alters the performance of SPEs. In addition, the research team introduces middle-school students to micro-artificial structures, like the one used in this project, by creating a series of short videos explaining fundamental concepts and distributing the videos over a wide range of social media platforms, allowing the research team to reach a large audience. These educational resources introduce middle-school students to topics that are interesting, do not require advanced mathematics to understand, and are generally not included in a middle-school curriculum.Technical description:While SPEs in layered hexagonal boron nitride (hBN) at room temperature take advantage of high photon purity, bright emission, and favorable quantum efficiencies, they exhibit extreme inhomogeneity, emitting photons at random energies spanning a broad range. This limits the suitability of SPEs for applications in quantum information science and technology, such as on-chip integrated quantum photonic circuits. This project will use a specially-designed multi-tip platform to investigate the SPEs with tunable local strain and perform a comprehensive study of the relationship between local strain and SPEs in hBN. The multi-tip platform provides the capability to control strain through careful design of the tip geometry and distribution, opening up opportunities in controllable strain engineering. The research team applies uniaxial, biaxial, and triaxial tensile and/or compressive strain on and around existing SPEs to quantitatively determine the strength and orientation dependence and investigate the fundamental principles that give rise to a variety of emission energies from SPEs. In addition to studying intrinsic SPEs, high strain is intentionally induced to investigate the formation process of SPEs. This project advances the understanding of the relationship between local strain and SPEs in hBN. The multi-tip platform used in this project can be directly extended to other 2D materials to investigate strain-induced light-matter interactions in 2D materials, such as SPEs in transition metal dichalcogenides and pseudo-magnetic fields in graphene, and explore their transport, topological, and quantum behaviors.This project is jointly funded by Electronic and Photonic Materials program in the Division of Materials Research and the Established Program to Stimulate Competitive Research (EPSCoR).This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：单光子发射器（SPE）以单粒子（光子）的形式发射光，是领先的量子信息技术（如计算，通信和密码学）的重要光源。为了将SPE与小型化设备集成，许多研究人员专注于固态系统，因为它们可以使用当前的纳米纤维技术精确制造和控制。近年来，已经报道了SPE在二维（2D）材料中的应用，其厚度仅为纳米级。这大大扩展了在芯片上可扩展集成SPE的可能性。然而，发射光子的颜色（能量）很难控制，因为在2D材料中控制单光子发射的基本原理还不完全清楚，导致SPE行为可能看起来是随机的。在这个项目中，研究小组开发了一种专门设计的显微设备，用锋利的尖端图案化，以定量确定2D材料中应变或机械变形的强度和形状如何决定或改变SPE的性能。此外，研究小组还通过制作一系列解释基本概念的短视频，并在广泛的社交媒体平台上分发视频，向中学生介绍了微型人工结构，就像本项目中使用的那样，使研究小组能够接触到大量观众。这些教育资源向中学生介绍有趣的主题，不需要高等数学来理解，通常不包括在中学课程中。技术描述：虽然室温下层状六方氮化硼（hBN）中的SPE利用了高光子纯度，明亮的发射和有利的量子效率，但它们表现出极端的不均匀性，发射光子的随机能量跨越很宽的范围。这限制了SPE在量子信息科学和技术中应用的适用性，例如片上集成量子光子电路。本计画将使用一个特别设计的多尖端平台来研究具有可调局部应变的SPE，并对hBN中的局部应变与SPE之间的关系进行全面的研究。多尖端平台通过尖端几何形状和分布的精心设计提供了控制应变的能力，为可控应变工程提供了机会。该研究小组在现有SPE上和周围施加单轴，双轴和三轴拉伸和/或压缩应变，以定量确定强度和取向依赖性，并研究SPE产生各种发射能量的基本原理。除了研究本征SPE外，还有意地引入高应变来研究SPE的形成过程。该项目推进了对hBN中局部应变和SPE之间关系的理解。本项目中使用的多尖端平台可以直接扩展到其他二维材料，研究二维材料中应变诱导的光-物质相互作用，如过渡金属二硫属化物中的SPE和石墨烯中的赝磁场，并探索它们的输运、拓扑、本项目由材料研究部电子和光子材料项目和既定项目共同资助。激励竞争性研究（EPSCoR）。该奖项反映了NSF的法定使命，并被认为是值得通过使用基金会的知识价值和更广泛的影响审查标准进行评估的支持。

项目成果

Single-Mask Fabrication of Sharp SiOx Nanocones

• DOI: 10.1109/tsm.2023.3336169
• 发表时间: 2024-02
• 期刊: IEEE Transactions on Semiconductor Manufacturing
• 影响因子: 2.7
• 作者: Eric Herrmann;Xi Wang