Collaborative Research: CNS Core: Small: IMPERIAL: In-Memory Processing Enhanced Racetrack Inspired by Accessing Laterally
Collaborative Research: CNS Core: Small: IMPERIAL: In-Memory Processing Enhanced Racetrack Inspired by Accessing Laterally
批准号:
2133340
负责人:
Sanjukta Bhanja
金额:
$18.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2021
资助国家:
美国
项目状态:
已结题
起止时间:
2021-10-01 至 2024-09-30
中文摘要
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英文摘要
Next generation mobile systems require memory and storage with unprecedented density and access speed that meets strict power/energy and reliability constraints. Moreover, these systems can benefit from application specific acceleration on data intensive workloads. For instance, Internet of Things (IoT) devices are tasked with acquiring, storing, and processing vast amounts of acquired information. Edge systems may slightly relax power/energy constraints, but can benefit from acceleration of machine learning, security, or other application specific tasks while maintaining quality of service on tasks from simultaneous disparate users. This project explores applying a new and understudied emerging memory technology called domain-wall memory (DWM) and its application to the needs of mobile and edge devices. DWM has properties that can be exploited to increase storage density, access speed, and to relieve the memory access bottleneck that exists in modern systems. The PIs will leverage their expertise to create a cross-layer design approach spanning the device/circuit- through system-level to develop a novel cross-DWM (XDWM) memory architecture with lateral read and write access capabilities. These innovations will revolutionize storage and processing for next generation mobile and edge devices by providing synergistic data storage and efficient processing-in-memory (PIM) with hooks for reliability. A cross-layer evaluation methodology will be adopted to cover prototype fabrication, device-level characterization, architecture-level simulation, and full system integration and emulation to explore the PIM. The transformative nature of this research is a disruptive new memory system that is dense, reliable, energy-efficient, ultra low latency with compute capability that can revolutionize the storage and processing capabilities of next generation computing systems. Such systems particularly include IoT, mobile and secure shared use edge systems but also apply to high performance computing and cloud systems. Further impacts of the proposed research include the integration of various education and advocacy activities based on the resources available to the two PIs such as (i) outreach for local K-12 students through Pitt's “Investing Now” summer school and USF's “Engineering Day” and Expo, where Engineering solutions are showcased to approximately 10,000 K-12 students/parents/teachers. (ii) inclusivity: Both PIs have a track record of including Under-represented Minority (URM) students.. They will continue to focus on URM representation in their team. (iii) curriculum: course integration of the research at both sites.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(5)
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科研奖励(0)
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DOI:
10.1109/tcsii.2022.3161594
发表时间:
2022-03
期刊:
IEEE Transactions on Circuits and Systems II: Express Briefs
影响因子:
--
作者:
[Kawsher A. Roxy;Stephen Longofono;Sébastien Olliver;S. Bhanja;A. R. U. O. Florida;U. Pittsburgh]
通讯作者:
Kawsher A. Roxy;Stephen Longofono;Sébastien Olliver;S. Bhanja;A. R. U. O. Florida;U. Pittsburgh
DOI:
10.1109/micro56248.2022.00060
发表时间:
2022-10
期刊:
2022 55th IEEE/ACM International Symposium on Microarchitecture (MICRO)
影响因子:
--
作者:
[S. Ollivier;Stephen Longofono;Prayash Dutta;J. Hu;S. Bhanja;A. Jones]
通讯作者:
S. Ollivier;Stephen Longofono;Prayash Dutta;J. Hu;S. Bhanja;A. Jones
DOI:
10.1109/tnano.2023.3298920
发表时间:
2022-05
期刊:
IEEE Transactions on Nanotechnology
影响因子:
2.4
作者:
[Prayash Dutta;Albert Lee;Kang L. Wang;A. Jones;S. Bhanja]
通讯作者:
Prayash Dutta;Albert Lee;Kang L. Wang;A. Jones;S. Bhanja
XDWM: A 2D Domain Wall Memory
XDWM:2D 畴壁存储器
DOI:
10.1109/tnano.2022.3158889
发表时间:
2022
期刊:
IEEE Transactions on Nanotechnology
影响因子:
2.4
作者:
[Hoque, Arifa, Jones, Alex K., Bhanja, Sanjukta]
通讯作者:
Bhanja, Sanjukta
Toward Comprehensive Shifting Fault Tolerance for Domain-Wall Memories with PIETT
利用 PIETT 实现域壁存储器的全面移位容错
DOI:
10.1109/tc.2022.3188206
发表时间:
2022
期刊:
IEEE Transactions on Computers
影响因子:
3.7
作者:
[Ollivier, Sebastien, Longofono, Stephen, Dutta, Prayash, Hu, Jingtong, Bhanja, Sanjukta, Jones, Alex K.]
通讯作者:
Jones, Alex K.
LSAMP Bridge to the Doctorate: University of South Florida, Florida-Georgia LSAMP (FGLSAMP)
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批准号:2306104
-
项目类别:Standard Grant
-
资助金额:$107.5万
-
财政年份:2023
-
负责人:Sanjukta Bhanja
-
依托单位:
Curricular, Co-curricular, Social, and Financial Supports for Successful Transfer and Graduation of Engineering Undergraduates from Rural/Nontraditional Backgrounds
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批准号:2030861
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项目类别:Standard Grant
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资助金额:$307.01万
-
财政年份:2020
-
负责人:Sanjukta Bhanja
-
依托单位:
LSAMP BD: University of South Florida Florida-Georgia Louis Stokes Alliance for Minority Participation (FGLSAMP)
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批准号:1906518
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项目类别:Standard Grant
-
资助金额:$107.5万
-
财政年份:2019
-
负责人:Sanjukta Bhanja
-
依托单位:
SHF: Small: Reconfigurability and Technology Integration of Magnetic Energy Minimization Co-Processor (MEMCoP)
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批准号:1619027
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2016
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负责人:Sanjukta Bhanja
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依托单位:
I-Corps: Software Suite for Quality-Control of Patterned Nanostructures
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批准号:1456185
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:2014
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负责人:Sanjukta Bhanja
-
依托单位:
Workshop on Fostering Diversity in the Design Automation for Emerging Computing Community
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批准号:1419422
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项目类别:Standard Grant
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资助金额:$1.2万
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财政年份:2014
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负责人:Sanjukta Bhanja
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依托单位:
CCLI (Exploratory): Introduction of Nano-computing course module in standard Electrical Engineering Courses
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批准号:0736971
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项目类别:Standard Grant
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资助金额:$14.59万
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财政年份:2008
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负责人:Sanjukta Bhanja
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依托单位:
CAREER: Error Power and Reliability for Nano-Silicon and Beyond
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批准号:0639624
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项目类别:Continuing Grant
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资助金额:$40.0万
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财政年份:2007
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负责人:Sanjukta Bhanja
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依托单位:
CRI: Infrastructure acquisition for sub-100 nano VLSI research
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批准号:0551621
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项目类别:Standard Grant
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资助金额:$21.5万
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财政年份:2006
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负责人:Sanjukta Bhanja
-
依托单位:
国内基金
海外基金
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批准号:24ZR1403900
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批准号:30824808
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资助金额:24.0万元
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负责人:张爱兰
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Research on the Rapid Growth Mechanism of KDP Crystal
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批准号:10774081
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项目类别:面上项目
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资助金额:45.0万元
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批准年份:2007
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负责人:滕冰
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