CAREER: Error Power and Reliability for Nano-Silicon and Beyond

职业：纳米硅及其他领域的误差功率和可靠性

• 批准号: 0639624
• 负责人: Sanjukta Bhanja
• 金额: $ 40万
• 依托单位: University of South Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-04-15 至 2014-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0639624&HistoricalAwards=false
• 关键词: CAREER; Error; Power; Reliability; Nano

Proposal ID: 0639624Title: Error Power and Reliability for Nano-Silicon and BeyondPI: Sanjukta BhanjaInstitution: University of South FloridaABSTRACT:Over the years, the underlying design philosophy of electronic design and analysis tools has undergone paradigm shifts from area optimization to timing optimization to power optimization and now is shifting to reliability-centric design optimization. Understanding of the interplay between errors, power dissipation in a chip with its associated side effects, and reliability problems will be the key to commercial success of sub-30nm silicon and nonsilicon technologies. It is expected that statistical theories and probabilistic methods will play significant role in the design of such reliability-centric CAD tools. In this context, the career research goal of the PI is to construct reliability-centric design and analysis tools for the inter-coupled issues of error, power and redundancy for nano-CMOS and other emerging nano-devices, such as quantum-dot cellular automata. There are two main thrusts : one in medium term problems and the other in long term problems. First, in the medium term category are problems related to nano-CMOS for which the PI will research reliability-centric design optimization and analysis tools at logic level for error, power, and reliability of nano-CMOS, taking into account process variability and circuit topology. These models would allow probabilistic abstraction of technology-dependent parameters, such as device characteristics, process parameter variations, and thermal issues, in addition to, structural dependencies among the interconnected components and input uncertainties. In the long term category are problems in novel computing paradigms using emerging nano-devices such as field-coupled computing architectures using quantum-dot cellular automata. The basic issues considered will still be the same, i.e. error, power, and reliability; however, the modeling of these will be driven by the physics of these devices to a larger extent than nano-CMOS. The career teaching goals of the PI spans traditional pedagogic activities, such as developing new courses, and educational research related to VLSI education, such as testing the hypotheses that (a) active learning, based on sensory mode of a student, or (b) "Learning by doing" promotes deeper understanding of VLSI concepts.

摘要：多年来，电子设计和分析工具的基本设计理念经历了从面积优化到时序优化再到功率优化的范式转变，现在正在向以可靠性为中心的设计优化转变。了解误差、芯片功耗及其相关副作用和可靠性问题之间的相互作用将是30nm以下硅和非硅技术商业成功的关键。期望统计理论和概率论方法在这种以可靠性为中心的CAD工具的设计中发挥重要作用。在此背景下，PI的职业研究目标是构建以可靠性为中心的设计和分析工具，以解决纳米cmos和其他新兴纳米器件（如量子点元胞自动机）的误差、功率和冗余等相互耦合问题。主要有两个重点：一个是中期问题，另一个是长期问题。首先，在中期类别中是与纳米cmos相关的问题，PI将研究以可靠性为中心的设计优化和分析工具，在逻辑层面上分析纳米cmos的误差、功率和可靠性，同时考虑到工艺可变性和电路拓扑结构。这些模型将允许对技术相关参数进行概率抽象，例如设备特性、工艺参数变化和热问题，以及相互连接的组件之间的结构依赖性和输入不确定性。从长远来看，使用新兴纳米器件的新型计算范式存在问题，例如使用量子点元胞自动机的场耦合计算架构。所考虑的基本问题仍将是相同的，即误差、功率和可靠性；然而，这些建模将在更大程度上由这些器件的物理特性驱动，而不是纳米cmos。PI的职业教学目标跨越了传统的教学活动，例如开发新课程，以及与超大规模集成电路教育相关的教育研究，例如测试以下假设：(a)基于学生感官模式的主动学习，或(b)“边做边学”促进对超大规模集成电路概念的更深入理解。