LEAPS-MPS: Nanopatterning Nitride Based Nanostructures Using Sequential Infiltration Synthesis for Optoelectronic Applications

LEAPS-MPS：利用连续渗透合成技术对氮化物基纳米结构进行纳米图案化，用于光电应用

• 批准号: 2213365
• 负责人: Mahua Biswas
• 金额: $ 17.93万
• 依托单位: Board of Trustees of Illinois State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-08-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2213365&HistoricalAwards=false
• 关键词: LEAPS; MPS; Nanopatterning; Nitride; Based

This award is funded in whole or in part under the American Rescue Plan Act of 2021 (Public Law 117-2). Non-Technical Summary:Optoelectronic devices, including photodetectors, solar cells, and light-emitting diodes (LEDs), are essentially energy conversion devices which converts light to electricity or vice versa. These devices are used in many aspects of modern life such as telecommunication, energy, consumer electronics, and solid-state lighting. Most commonly the active material in optoelectronic devices are Gallium Nitride (GaN) or Aluminum Nitride (AlN). These materials have attracted significant attention and are of great interest because of their emission in ultraviolet (UV) and visible wavelengths. Nanostructures of nitride materials are not as common as planar structures which are currently used in commercial devices, but they could enable future devices with novel functionalities. With this award from the LEAPS-MPS program researchers at Illinois State University develop nanopatterns of AlN and GaN by using a synthesis approach called Sequential Infiltration Synthesis (SIS). SIS allows them to investigate the growth mechanism of the nitride materials as well as optical properties of nanostructures with different shapes morphologies. In addition to this research being of great interest to the semiconductor industry, the project also enhances the undergraduate education at a primarily undergraduate institution because students can participate in cutting-edge experimental research, which provides hands-on synthesis and characterization opportunities. This effort also broadens the semiconductor workforce by integrating research results into the physics curriculum as part of an upper-level experimental physics courses. The recipient of this award, an early career female faculty member is a role model for female and minority students, encouraging them to choose STEM careers. Technical Summary:In the field of optoelectronic research, group III nitrides such as AlN and GaN have gained significant attention over last few decades due to their stabilities and as a wide band gap semiconductor with emission in the ultraviolet and visible ranges. The planar structured nitride materials currently used in commercial devices come with limitations such as defects and dislocations due to lattice mismatch with available substrates which consequently limit the performance of the resulting devices, high temperature requirements limiting choice of substrates and the dimensions are not suitable for futuristic nanoscale devices. For emerging devices, the concerns related to planar structures can be alleviated by employing nanostructures of these materials. However, fabrication methods of nanostructured nitride materials are still in infancy and current approaches are complex and multi-step processes. Significant improvements and a fundamental understanding are needed regarding the growth of nitride nanostructures and subsequent long-range patterning of these nanostructures. With this award from the LEAPS-MPS program the researchers synthesize AlN and GaN nanorod patterns using nanostructured block copolymer (BCP) templates and an inorganic deposition method called Sequential Infiltration Synthesis (SIS). The SIS process involves infiltration of gas phase molecules into soft polymeric materials. This project investigates the SIS growth mechanism for nitride materials using Fourier Transform Infrared Spectroscopy (FTIR) as well as other physical, structural and optical characterization techniques. These and other methods, including scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX), X-ray diffraction (XRD), photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy, and cathodoluminescence (CL) imaging, are used to study the resulting nanostructures. The proposed work opens up new avenues of research to realize nitride nanomaterial growth and patterning using SIS as a facile and cost-effective method.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该奖项全部或部分由《2021年美国救援计划法案》（公法117-2）资助。非技术概要：光电器件，包括光电探测器、太阳能电池和发光二极管（led），本质上是将光转换为电或反之亦然的能量转换装置。这些设备用于现代生活的许多方面，如电信、能源、消费电子和固态照明。光电器件中最常见的活性材料是氮化镓（GaN）或氮化铝（AlN）。这些材料由于其在紫外（UV）和可见光波段的发射而引起了极大的关注和兴趣。氮化材料的纳米结构不像目前在商业设备中使用的平面结构那样普遍，但它们可以使未来的设备具有新颖的功能。伊利诺伊州立大学的研究人员获得了leap - mps项目的奖金，通过使用一种称为顺序渗透合成（SIS）的合成方法，开发了氮化铝和氮化镓的纳米模式。SIS允许他们研究氮化材料的生长机制以及具有不同形状形态的纳米结构的光学特性。除了半导体行业对这项研究非常感兴趣之外，该项目还增强了本科院校的本科教育，因为学生可以参与尖端的实验研究，这提供了动手合成和表征的机会。通过将研究成果作为高级实验物理课程的一部分整合到物理课程中，这一努力也拓宽了半导体劳动力。该奖项的获得者是一名早期职业女性教师，她是女性和少数族裔学生的榜样，鼓励他们选择STEM职业。在光电研究领域，III族氮化物（如AlN和GaN）由于其稳定性和作为在紫外和可见光范围内发射的宽带隙半导体而在过去几十年中受到了极大的关注。目前用于商业设备的平面结构氮化物材料存在局限性，例如由于晶格与可用衬底不匹配而导致的缺陷和位错，从而限制了最终设备的性能，高温要求限制了衬底的选择，并且尺寸不适合未来的纳米级设备。对于新兴器件，采用这些材料的纳米结构可以减轻与平面结构有关的问题。然而，纳米结构氮化物材料的制备方法仍处于起步阶段，目前的方法是复杂和多步骤的过程。对于氮化纳米结构的生长和这些纳米结构随后的远程图像化，需要有重大的改进和基本的理解。通过leap - mps项目，研究人员使用纳米结构嵌段共聚物（BCP）模板和一种称为顺序渗透合成（SIS）的无机沉积方法合成了氮化镓和氮化镓纳米棒图案。SIS过程包括气相分子渗透到软聚合物材料中。本项目利用傅里叶变换红外光谱（FTIR）以及其他物理、结构和光学表征技术研究氮化材料的SIS生长机制。这些方法和其他方法，包括扫描电子显微镜（SEM）、能量色散x射线光谱（EDX）、x射线衍射（XRD）、光致发光（PL）和光致发光激发（PLE）光谱以及阴极发光（CL）成像，都被用来研究所得的纳米结构。本研究为利用SIS作为一种简便、经济的方法实现氮化纳米材料的生长和图像化开辟了新的研究途径。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。