LEAPS-MPS: Nanopatterning Nitride Based Nanostructures Using Sequential Infiltration Synthesis for Optoelectronic Applications

LEAPS-MPS：利用连续渗透合成技术对氮化物基纳米结构进行纳米图案化，用于光电应用

• 批准号: 2213365
• 负责人: Mahua Biswas
• 金额: $ 17.93万
• 依托单位: Board of Trustees of Illinois State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-08-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2213365&HistoricalAwards=false
• 关键词: LEAPS; MPS; Nanopatterning; Nitride; Based

This award is funded in whole or in part under the American Rescue Plan Act of 2021 (Public Law 117-2). Non-Technical Summary:Optoelectronic devices, including photodetectors, solar cells, and light-emitting diodes (LEDs), are essentially energy conversion devices which converts light to electricity or vice versa. These devices are used in many aspects of modern life such as telecommunication, energy, consumer electronics, and solid-state lighting. Most commonly the active material in optoelectronic devices are Gallium Nitride (GaN) or Aluminum Nitride (AlN). These materials have attracted significant attention and are of great interest because of their emission in ultraviolet (UV) and visible wavelengths. Nanostructures of nitride materials are not as common as planar structures which are currently used in commercial devices, but they could enable future devices with novel functionalities. With this award from the LEAPS-MPS program researchers at Illinois State University develop nanopatterns of AlN and GaN by using a synthesis approach called Sequential Infiltration Synthesis (SIS). SIS allows them to investigate the growth mechanism of the nitride materials as well as optical properties of nanostructures with different shapes morphologies. In addition to this research being of great interest to the semiconductor industry, the project also enhances the undergraduate education at a primarily undergraduate institution because students can participate in cutting-edge experimental research, which provides hands-on synthesis and characterization opportunities. This effort also broadens the semiconductor workforce by integrating research results into the physics curriculum as part of an upper-level experimental physics courses. The recipient of this award, an early career female faculty member is a role model for female and minority students, encouraging them to choose STEM careers. Technical Summary:In the field of optoelectronic research, group III nitrides such as AlN and GaN have gained significant attention over last few decades due to their stabilities and as a wide band gap semiconductor with emission in the ultraviolet and visible ranges. The planar structured nitride materials currently used in commercial devices come with limitations such as defects and dislocations due to lattice mismatch with available substrates which consequently limit the performance of the resulting devices, high temperature requirements limiting choice of substrates and the dimensions are not suitable for futuristic nanoscale devices. For emerging devices, the concerns related to planar structures can be alleviated by employing nanostructures of these materials. However, fabrication methods of nanostructured nitride materials are still in infancy and current approaches are complex and multi-step processes. Significant improvements and a fundamental understanding are needed regarding the growth of nitride nanostructures and subsequent long-range patterning of these nanostructures. With this award from the LEAPS-MPS program the researchers synthesize AlN and GaN nanorod patterns using nanostructured block copolymer (BCP) templates and an inorganic deposition method called Sequential Infiltration Synthesis (SIS). The SIS process involves infiltration of gas phase molecules into soft polymeric materials. This project investigates the SIS growth mechanism for nitride materials using Fourier Transform Infrared Spectroscopy (FTIR) as well as other physical, structural and optical characterization techniques. These and other methods, including scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX), X-ray diffraction (XRD), photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy, and cathodoluminescence (CL) imaging, are used to study the resulting nanostructures. The proposed work opens up new avenues of research to realize nitride nanomaterial growth and patterning using SIS as a facile and cost-effective method.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该奖项的全部或部分资金来自《2021年美国救援计划法案》(公法117-2)。非技术概述：光电子器件，包括光电探测器、太阳能电池和发光二极管(LED)，本质上是将光转换为电或反之亦然的能量转换设备。这些设备用于现代生活的许多方面，如电信、能源、消费电子和固态照明。在光电子器件中，最常见的活性材料是氮化镓(GaN)或氮化铝(AlN)。这些材料引起了人们的极大关注和极大的兴趣，因为它们在紫外线和可见光波长下发射。氮化物材料的纳米结构不像目前商业设备中使用的平面结构那样常见，但它们可以使未来的设备具有新的功能。有了LEAPS-MPS项目的这一奖项，伊利诺伊州立大学的研究人员使用一种名为顺序渗透合成(SIS)的合成方法开发了AlN和GaN的纳米颗粒。SIS使他们能够研究氮化物材料的生长机制以及不同形状和形貌的纳米结构的光学性质。除了半导体行业对这项研究非常感兴趣外，该项目还加强了以本科为主的机构的本科教育，因为学生可以参与尖端实验研究，这提供了动手合成和表征的机会。这一努力还通过将研究成果整合到物理课程中，作为高级实验物理课程的一部分，扩大了半导体劳动力。该奖项的获得者是一位职业生涯早期的女性教职员工，她是女性和少数族裔学生的榜样，鼓励他们选择STEM职业。技术综述：在光电子研究领域，AlN和GaN等III族氮化物由于其稳定性和在紫外和可见光范围内发射的宽禁带半导体，在过去几十年中受到了极大的关注。目前用于商业器件的平面结构氮化物材料存在缺陷和位错等限制，如与可用衬底的晶格失配导致的缺陷和位错，从而限制了所得到的器件的性能，高温要求限制了衬底的选择，并且其尺寸不适合未来的纳米器件。对于新兴的器件，与平面结构相关的担忧可以通过使用这些材料的纳米结构来缓解。然而，纳米氮化物材料的制备方法还处于起步阶段，目前的方法都是复杂的多步骤工艺。关于氮化物纳米结构的生长和随后这些纳米结构的长程图案化，需要有重大的改进和基本的理解。有了LEAPS-MPS项目的这一奖项，研究人员使用纳米结构嵌段共聚(BCP)模板和称为顺序渗透合成(SIS)的无机沉积方法合成了AlN和GaN纳米棒图案。SIS工艺涉及将气相分子渗透到软聚合物材料中。本项目利用傅立叶变换红外光谱(FTIR)以及其他物理、结构和光学表征技术来研究氮化物材料的SIS生长机理。用扫描电子显微镜(SEM)、能量色散X射线能谱(EDX)、X射线衍射(XRD)、光致发光(PL)和光致发光激发(PLE)光谱以及阴极发光(CL)成像等方法对所得纳米结构进行了研究。这项拟议的工作开辟了新的研究途径，以实现氮化物纳米材料的生长和图案化，使用SIS作为一种简便和经济高效的方法。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。