Thermal Assessment of AlInN/GaN High Electron Mobility Transistors

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AlInN HEMTs are a very promising new kind of transistor strcucture. One of their major advantages is e.g. the possibility of a higher current density compared to more conventional transistor types. However, nearly nothing is known yet about the reliability of this HEMT type. This project focusses on a comparison of electrical transistor characteristics to thermal imaging methods allowing access to reliability issues. A special focus will be laid on Raman spectroscopy/thermography.