Electrically Pumped, Spin Polarized Perovskite Laser Diodes

该项目将促进对实现新型激光二极管所需的科学基础的理解，这种激光二极管基于一种新兴的半导体，称为金属卤化物钙钛矿。钙钛矿是从溶液中沉积的，这意味着它们几乎可以在任何衬底上制造，而传统的激光二极管很难甚至不可能生长。此外，目前激光二极管在绿色方面的性能存在缺陷，通俗地称为“绿色间隙”。钙钛矿可以在整个可见光谱区域有效地发光，具有解决“绿色间隙”的潜力。这项研究将加强美国的技术领先地位，并为下一代科学、技术、工程和数学（STEM）毕业生，包括女性和代表性不足的群体，做好从事STEM职业的准备。这个项目将包括外展活动，目的是向K-12学生传播这项研究。金属卤化物钙钛矿研究界面临的一个重大挑战是证明非外延，电泵浦钙钛矿激光二极管。克服这一挑战不仅将促进对钙钛矿半导体独特材料特性的科学理解，而且还将提供具有连续波长可调性的新型激光二极管，并且能够集成在III-V半导体生长困难甚至不可能的广泛衬底上。然而，要实现这一目标，必须克服几个主要的障碍，例如更深入地了解电泵浦下的增益特性，以及如何在管理重要的发射淬火过程的同时实现激光所需的可观水平的电流注入。我们提出的研究旨在克服这些障碍，并展示一个电泵，自旋极化钙钛矿激光二极管。这次演示将伴随着对这些材料的光学增益特性和载流子复合过程的深刻理解。通过这种更好的理解，可以开发出适合设备优化的策略。该项目将对卤化物钙钛矿光电子应用中欠发达的方面产生重大影响，例如光通信集成片上。该项目由电气、通信和网络系统部（ECCS）的电子、光子和磁性器件（EPMD）计划和促进竞争研究的既定计划（EPSCoR）共同资助。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

This project will advance the understanding of the scientific foundation needed to realize a new type of laser diodes based on an emerging class of semiconductor called metal halide perovskites. Perovskites are deposited from solution, meaning that they can be fabricated on virtually any substrates, where traditional laser diodes are difficult or even not possible to grow. Furthermore, there is currently a deficiency in the performance of laser diodes in the green, known colloquially as the “green gap”. Perovskite can emit light efficiently throughout the visible spectral region, holding the potential to address the “green gap”. The research will strengthen technological leadership of the U.S. and prepare the next generation of science, technology, engineering, and math (STEM) graduates, including women and underrepresented groups, to follow a STEM career. This project will incorporate outreach activities for the purpose of disseminating this research to K-12 students.A grand challenge within the metal halide perovskite research community is to demonstrate a non-epitaxial, electrically pumped perovskite laser diode. Overcoming this challenge will not only facilitate scientific understandings of the unique material properties of perovskite semiconductors, but also deliver a new class of laser diodes with continuous wavelength tunability and the ability to be integrated on a broad range of substrates where III-V semiconductor growth is difficult or even not possible. However, there are several major obstacles that must be surmounted to achieve this goal, such as a deeper understanding of the gain characteristics under electrical pumping, and how to achieve appreciable levels of current injection required for lasing while managing significant emission-quenching processes. Our proposed research seeks to overcome these obstacles and demonstrate an electrically pumped, spin polarized perovskite laser diode. This demonstration will be accompanied by a deep understanding of the optical gain characteristics and charge carrier recombination processes in these materials. From this improved understanding, tailored strategies for device optimization can be developed. This project will have a great impact on less well-developed aspects of halide perovskite optoelectronic applications, such as optical communications integrated on-chip.This project is jointly funded by the Electronic, Photonic, and Magnetic Devices (EPMD) Program of the Electrical, Communications and Cyber Systems Division (ECCS) Division , and the Established Program to Stimulate Competitive Research (EPSCoR).This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.