Electrically Pumped, Spin Polarized Perovskite Laser Diodes

该项目将促进对实现一种新型激光二极管所需科学基础的理解，这种新型激光二极管基于一种新兴的半导体--金属卤化物钙钛矿。钙钛矿是从溶液中沉积出来的，这意味着它们可以在几乎任何衬底上制造，而传统的激光二极管很难甚至不可能生长在这些衬底上。此外，目前在绿地中激光二极管的性能存在不足，俗称为“绿隙”。钙钛矿可以在可见光光谱范围内高效发光，具有解决“绿色鸿沟”的潜力。这项研究将加强美国在技术方面的领先地位，并为下一代科学、技术、工程和数学(STEM)毕业生做好准备，包括女性和代表性不足的群体，以从事STEM职业。这个项目将包括向K-12学生传播这项研究的外展活动。金属卤化物钙钛矿研究界的一个重大挑战是展示一种非外延、电动泵浦的钙钛矿激光二极管。克服这一挑战不仅将促进对钙钛矿半导体独特材料性质的科学理解，还将提供具有连续波长可调性的新型激光二极管，并能够在难以甚至不可能生长III-V半导体的广泛衬底上进行集成。然而，要实现这一目标，必须克服几个主要障碍，例如更深入地了解电泵浦下的增益特性，以及如何在管理重要的发射猝灭过程的同时实现激光所需的可观的电流注入水平。我们提出的研究试图克服这些障碍，并展示了一种电泵浦、自旋极化的钙钛矿型激光二极管。这一演示将伴随着对这些材料中的光学增益特性和电荷载流子复合过程的深入了解。从这一改进的理解中，可以开发出针对设备优化的定制策略。该项目将对卤化物钙钛矿光电子应用的欠发达方面产生重大影响，例如集成在芯片上的光通信。该项目由电气、通信和网络系统部门(ECCS)的电子、光子和磁性设备(EPMD)计划以及既定的激励竞争研究计划(EPSCoR)联合资助。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

This project will advance the understanding of the scientific foundation needed to realize a new type of laser diodes based on an emerging class of semiconductor called metal halide perovskites. Perovskites are deposited from solution, meaning that they can be fabricated on virtually any substrates, where traditional laser diodes are difficult or even not possible to grow. Furthermore, there is currently a deficiency in the performance of laser diodes in the green, known colloquially as the “green gap”. Perovskite can emit light efficiently throughout the visible spectral region, holding the potential to address the “green gap”. The research will strengthen technological leadership of the U.S. and prepare the next generation of science, technology, engineering, and math (STEM) graduates, including women and underrepresented groups, to follow a STEM career. This project will incorporate outreach activities for the purpose of disseminating this research to K-12 students.A grand challenge within the metal halide perovskite research community is to demonstrate a non-epitaxial, electrically pumped perovskite laser diode. Overcoming this challenge will not only facilitate scientific understandings of the unique material properties of perovskite semiconductors, but also deliver a new class of laser diodes with continuous wavelength tunability and the ability to be integrated on a broad range of substrates where III-V semiconductor growth is difficult or even not possible. However, there are several major obstacles that must be surmounted to achieve this goal, such as a deeper understanding of the gain characteristics under electrical pumping, and how to achieve appreciable levels of current injection required for lasing while managing significant emission-quenching processes. Our proposed research seeks to overcome these obstacles and demonstrate an electrically pumped, spin polarized perovskite laser diode. This demonstration will be accompanied by a deep understanding of the optical gain characteristics and charge carrier recombination processes in these materials. From this improved understanding, tailored strategies for device optimization can be developed. This project will have a great impact on less well-developed aspects of halide perovskite optoelectronic applications, such as optical communications integrated on-chip.This project is jointly funded by the Electronic, Photonic, and Magnetic Devices (EPMD) Program of the Electrical, Communications and Cyber Systems Division (ECCS) Division , and the Established Program to Stimulate Competitive Research (EPSCoR).This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.