Growth dynamics and innovative spectroscopic techniques for real-time control of advanced electronics materials grown by molecular beam epitaxy

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Many important semiconductor devices for communications, lasers, high speed electronics and optical sensing are based on materials grown by Molecular Beam Epitaxy (MBE). This research will provide the first measurements of the reactions taking place during MBE and thus enable accurate growth of the complex multi-layered material required for improved semiconductor devices. In particular, this project will make a major contribution to Australia's established capability to produce and develop state-of-the art infrared sensors as required for defence applications, remote sensing of minerals and pollutants, chemical analysis, and health diagnostics. PhD students will be trained in advanced semiconductor growth and optical sensing technologies.