Indium arsenic antimony (InAsSb) Quantum Dots for Mid-Infrared Lasers
Indium arsenic antimony (InAsSb) Quantum Dots for Mid-Infrared Lasers
用于中红外激光器的铟砷锑 (InAsSb) 量子点
批准号：
DP0774366
负责人：
A/Prof Wen Lei
金额：
$23.3万
依托单位国家：
澳大利亚
项目类别：
Discovery Projects
财政年份：
2007
资助国家：
澳大利亚
项目状态：
已结题
起止时间：
2007-06-04 至 2010-06-03
中文摘要
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英文摘要
This proposal will open a new area of research for mid-infrared laser devices. Any achievement from this project will benefit various academic and industrial communities, such as national security, environmental monitoring and spectroscopy. The outcomes of this research could create a new generation of high-performance mid-infrared lasers and put Australian researchers in the forefront of the development in this field.
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会议论文
Defect generation in hetero-epitaxy on lattice mismatched substrates
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批准号：DP200103188
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项目类别：Discovery Projects
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资助金额：$34.69万
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财政年份：2020
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负责人：A/Prof Wen Lei
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依托单位：
HgCdSe: A novel II-VI semiconductor material for next generation infrared technologies
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批准号：FT130101708
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项目类别：ARC Future Fellowships
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资助金额：$52.47万
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财政年份：2014
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负责人：A/Prof Wen Lei
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依托单位：
海外基金
