HgCdSe: A novel II-VI semiconductor material for next generation infrared technologies

HgCdSe：用于下一代红外技术的新型 II-VI 半导体材料

• 批准号: FT130101708
• 负责人: A/Prof Wen Lei
• 金额: $ 52.47万
• 依托单位: The University of Western Australia
• 依托单位国家: 澳大利亚
• 项目类别: ARC Future Fellowships
• 财政年份: 2014
• 资助国家: 澳大利亚
• 起止时间: 2014-09-30 至 2018-09-28
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/FT130101708
• 关键词: HgCdSe; novel; II; VI; semiconductor

High performance infrared sensors and systems represent core technologies in various civilian and defence applications such as remote sensing, environment monitoring, night vision and national security. The goal of this project is to develop new mercury cadmium selenide-based materials on gallium antimonide substrates for future high performance infrared sensors with the unique features of low cost, large array size, room temperature operation as well as multiband detection. The outcomes of this project will lead to new science and next generation infrared sensors of benefit to Australian industry and defence technology.

高性能红外传感器和系统代表了各种民用和国防应用的核心技术，如遥感，环境监测，夜视和国家安全。该项目的目标是开发基于锑化镓衬底的新型汞镉硒基材料，用于未来高性能红外传感器，具有低成本，大阵列尺寸，室温操作以及多波段检测的独特功能。该项目的成果将导致新的科学和下一代红外传感器，有利于澳大利亚工业和国防技术。