Defect generation in hetero-epitaxy on lattice mismatched substrates

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High quality lattice mismatched semiconductor heterostructures are core enabling technologies for next generation electronic and optoelectronic devices with new functions and features such as monolithic integration, lower production costs, larger wafer size, and better system robustness. This project will generate new science on defect generation in lattice mismatched hetero-epitaxy with the aim of developing novel strategies for their minimisation. The direct outcome will be higher quality HgCdTe materials on lattice mismatched Si or III-V substrates with defect density low enough for fabricating high performance mid-wave and long-wave infrared arrays with features of lower cost, larger array format size, and higher operating temperature.