Quantum and classical light emitters in silicon: impurities and complex defects for nanophotonics

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The ULYSSES project aims at exploring a novel approach based on complex point defects in silicon-based devices for the fabrication of bright light sources. More specifically, in analogy to the phenomenal development of Nitrogen-Vacancy (NV) centers in diamonds, we intend to study G-centers in silicon for the implementation of quantum light sources, lasers and diodes. Our methodology relies on spatially-selective and broad-areas implantation of impurities (such as carbon ions) in silicon-based nanostructures (thin slabs, SiGe-based nanocrystals, and photonic structures) in order to fabricate (i) bright emitters such as LEDs and lasers when ultra-high G-centers densities are used (acting as classical light sources in the prospect of on-chip and out-of chip optical communications), and (ii) down to a single G-center for the demonstration of a quantum light source in silicon (in the prospect of quantum information protocols with photon-encoded quantum bits).