Si基板上半導体薄膜光集積回路の高効率と高温化動作に関する研究

硅衬底上半导体薄膜光集成电路高效高温工作研究

• 批准号: 21J14548
• 负责人: FANG WEICHENG
• 金额: $ 0.96万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2021
• 资助国家: 日本
• 起止时间: 2021-04-28 至 2023-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21J14548/
• 关键词: 薄膜光集積回路; 表面活性化接合; 熱抵抗; 薄膜DFBレーザ; InPリブ導波路; 化学機械研磨; 薄膜集積光回路

令和４年度において、目的に(1)薄膜光集積回路の高温動作の実現(>100℃)、(2)薄膜光集積回路の高速動作(常温>20 Gbps)の実現を行った。具体的には昨年実現したa-Siナノ薄膜を介した表面活性化常温接合を利用し、低熱抵抗を有する薄膜DFBレーザ、GaInAsP埋め込み導波路、p-i-n薄膜受光器(PD)をSi基板上に大面積かつ安定な集積プロセスを実現した。レーザのしきい値を低減するため、横方向光閉じ込めが上昇可能なリッジ構造も導入した。各温度下での静特性、動特性を評価した結果(1)静特性で、リッジ構造を有する低熱抵抗薄膜DFBレーザは低しきい値電流(0.27 mA)があり、PD側は従来構造(0.16 mA)の6倍くらいの最大光電流（0.95 mA）が得た。PD側の光電流(IPD)とLD側の注入電流(ILD)のスロープ効率(IPD/ILD) は従来(0.068 mA/mA)の約3倍程度(0.2 mA/mA )を得ることができた。また、最高環境動作温度は初めて120℃の連続波(CW)動作を確認した。(2)動特性で、小信号と大信号動作を25℃から80℃まで測定した。25℃と80℃での3-dB帯域は16.8 GHzと10.1 GHzを実現するとともに、信号伝送は25℃で25 Gbps、80℃で15 Gbpsを実現した。

In order to achieve this goal,(1) high temperature operation of thin film optical concentrator circuit (>100℃),(2) high speed operation of thin film optical concentrator circuit (normal temperature>20 Gbps). Specifically, the a-Si thin film has been realized in the past year, and the surface activation is realized at room temperature. The low thermal resistance is realized by the thin film DFB, GaInAsP buried waveguide, p-i-n thin film photoreceiver (PD), and the large-area stable accumulation is realized on the Si substrate. In the middle of the road, the light source is low, and the light source is high. Results of static and dynamic characteristics evaluation at various temperatures (1) Static and dynamic characteristics of low thermal resistance thin film DFB were obtained, and the maximum photocurrent (0.95 mA) was 6 times higher than that of PD side structure (0.16 mA). The ratio of photocurrent (IPD) on PD side to injection current (ILD) on LD side (IPD/ILD) is about 3 times higher than that of (0.068 mA/mA)(0.2 mA/mA ). The maximum ambient operating temperature is 120℃ and CW operation is confirmed. (2)Dynamic characteristics, small signal and large signal operation are measured at 25℃ to 80℃. The 3-dB band between 25℃ and 80℃ is 16.8 GHz and 10.1 GHz. Signal transmission is 25 Gbps at 25℃ and 15 Gbps at 80℃.

项目成果

High Temperature and High Efficiency Operation of Membrane Photonic Integrated Circuits on Si Substrate

硅衬底上薄膜光子集成电路的高温高效运行

• 发表时间: 2022
• 作者: Weicheng Fang;Naoki Takahashi;Tsuyoshi Horikawa;Yoshitaka Ohiso;Ruihao Xue;Shunto Katsumi;Tomohiro Amemiya;and Nobuhiko Nishiyama
• 通讯作者: and Nobuhiko Nishiyama

Low Thermal Resistance of Membrane Distributed Feedback Laser Fabricated by Nano-film Assisted Room-temperature Surface Activated Bonding

纳米膜辅助室温表面活化键合膜分布式反馈激光器的低热阻

• 发表时间: 2021
• 作者: Weicheng Fang;Naoki Takahashi;Ruihao Xue;Shunto Katsumi;Tomohiro Amemiya;and Nobuhiko Nishiyama
• 通讯作者: and Nobuhiko Nishiyama

Reduced thermal resistance of membrane Fabry-Perot laser bonded on Si through room-temperature, surface-activated bonding assisted by a-Si nano-film

通过非晶硅纳米膜辅助的室温表面活化键合，降低法布里-珀罗激光键合在硅上的膜的热阻

• DOI: 10.1109/jqe.2022.3145870
• 发表时间: 2022
• 期刊: IEEE Journal of Quantum Electronics
• 影响因子: 2.5
• 作者: W. Fang;N. Takahashi;Y. Ohiso;T. Amemiya;N. Nishiyama
• 通讯作者: N. Nishiyama

Characterization of InP-Rib Waveguide on Si Substrate for Membrane Photonic Integrated Circuits

用于膜光子集成电路的 Si 衬底上 InP-Rib 波导的表征

• 发表时间: 2022
• 作者: Ruihao Xue;Weicheng Fang;Naoki Takahashi;Shunto Katsumi;Yohsitaka Ohiso;Tomohiro Amemiya;and Nobuhiko Nishiyama
• 通讯作者: and Nobuhiko Nishiyama

High-temperature and high-efficiency operation of a membrane optical link with a buried-ridge-waveguide bonded on a Si substrate

硅基片埋脊波导薄膜光链路的高温高效运行

• DOI: 10.1364/oe.468192
• 发表时间: 2022
• 期刊: Optics Express
• 影响因子: 3.8
• 作者: Fang Weicheng;Takahashi Naoki;Horikawa Tsuyoshi;Ohiso Yoshitaka;Xue Ruihao;Katsumi Shunto;Amemiya Tomohiro;Nishiyama Nobuhiko
• 通讯作者: Nishiyama Nobuhiko