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Surface activated bonding of GaN and its application for optical devices

GaN表面活化键合及其在光学器件中的应用

基本信息

批准号：
17360155
负责人：
HIGURASHI Eiji
金额：
$ 6.14万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17360155/
关键词：
Gallium nitride Bonding Surface activation Aluminum Fast atom beam シリコンオーミックコンタクト

项目摘要

Bonding of n-type GaN to gallium arsenide (GaAs) and polycrystalline Al was realized by surface activated bonding method at room temperature. The interface microstructure, bonding strength, and electrical characteristics of bonded interface junctions have been investigated through transmission electron microscopy (TEM), die-shear strength testing, tensile strength testing, and current-voltage (I-V) measurements. The silicon doped n-type GaN films used in this experiment were grown by metal organic chemical vapor deposition on (0001) sapphire substrates. For producing active surfaces, argon-fast atom beam (FAB) sputtering source (acceleration voltage and current of 1.5 kV and 15 mA) was used. The background pressure in the bonding chamber was in the range of 4×10^<-4>-6×10^<-7> Pa. The samples were brought into contact as quickly as possible at room temperature after surface activation. GaN films were successfully bonded to GaAs substrates and polycrystalline Al rods without any heat treatment. Cross-sectional TEM of GaN/Al samples bonded at room temperature showed a nearly continuous amorphous thin interlayer with a thickness of about 10 nm at the interface. The die-shear strength of GaN/GaAs was in the range of 1.5 -7 MPa. The tensile strength of GaN/Al was in the range of 14-19 MPa. The results of I-V measurements showed that the n-GaN/Al junctions without annealing were rectifying, and became ohmic after annealing in N_2 at 600℃. The advantage of our process is free from the various problems caused by the large thermal expansion mismatch during heat treatment in the conventional fusion bonding.

采用表面活化键合的方法，在室温下实现了n型氮化镓与砷化镓和多晶铝的键合。通过透射电子显微镜（TEM）、模剪强度测试、拉伸强度测试和电流-电压（I-V）测量，研究了界面微观结构、键合强度和键合界面结的电特性。本实验采用金属有机化学气相沉积方法在（0001）蓝宝石衬底上生长掺杂硅的n型GaN薄膜。为了制备活性表面，采用了加速电压为1.5 kV、加速电流为15 mA的氩快原子束（FAB）溅射源。键合室的背景压力范围为4×10^<-4>-6×10^<-7> Pa。表面活化后的样品在室温下尽可能快地接触。在没有任何热处理的情况下，GaN薄膜成功地结合到GaAs衬底和多晶Al棒上。室温下结合GaN/Al样品的横截面透射电镜显示，在界面处有一个厚度约为10 nm的非晶态薄层。GaN/GaAs的模剪强度在1.5 ~ 7 MPa之间。GaN/Al的抗拉强度在14 ~ 19 MPa之间。I-V测量结果表明，未退火的n-GaN/Al结具有整流特性，在600℃的氮气中退火后形成欧姆结。该工艺的优点是避免了传统熔接在热处理过程中由于热膨胀失配过大而产生的各种问题。