Fabrication of PVDF tunnel junctions using and evaluation of memristor properties

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The purpose of this research is to develop a novel Organic ferroelectric-based ferroelectric tunnel junction and evaluate its memristive performance. Polymer-based flexible ferroelectric materials such as PVDF have a large scope for applicability in ferroelectric tunnel junctions as ultrathin barrier materials. Our proposed technique is a new approach to fabricate highly oriented ultrathin polymer films using 2D graphene-based materials as support. These ultrathin ferroelectric polymers will pave new pathways in developing flexible and miniaturized electronic devices.