Fabrication of PVDF tunnel junctions using and evaluation of memristor properties

本研究旨在发展一种新型有机铁电基铁电隧道结，并评估其忆阻特性。聚合物基柔性铁电材料如PVDF作为铁电隧道结的势垒材料具有很大的适用范围。我们提出的技术是一种新的方法来制造高度取向的聚合物薄膜使用二维石墨烯基材料作为支持。这些高分子铁电材料将为开发柔性和小型化的电子器件开辟新的途径。

The purpose of this research is to develop a novel Organic ferroelectric-based ferroelectric tunnel junction and evaluate its memristive performance. Polymer-based flexible ferroelectric materials such as PVDF have a large scope for applicability in ferroelectric tunnel junctions as ultrathin barrier materials. Our proposed technique is a new approach to fabricate highly oriented ultrathin polymer films using 2D graphene-based materials as support. These ultrathin ferroelectric polymers will pave new pathways in developing flexible and miniaturized electronic devices.