Intelligent Active Balancing of Parallel/Series-connected Power Devices

并联/串联功率器件的智能有源平衡

• 批准号: 20K14720
• 负责人: Tripathi Ravi・Nath
• 金额: $ 2.75万
• 依托单位: Kyoto University of Advanced Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Early-Career Scientists
• 财政年份: 2020
• 资助国家: 日本
• 起止时间: 2020-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-20K14720/
• 关键词: Power device; Paralleling; SiC; GaN; Power Devices; Parallel Connection; Gate Control; Balancing; Active Balancing; Intelligent Control

The intelligent balancing of the parallel connected power devices is explored considering the wide band gap power devices. Parallel connected SiC devices are controlled using the gate delay and gate compensation control with appropriate resolution that is capable of minimizing the unbalanced current.Further, a hybrid switch ooncept is proposed and implemented considering a chopper circuit for the improved ruggedness and switching performance of the GaN and SiC switches. A parallel hybrid GaN and SiC switch with intelligent switching control technique using single gate driver solution, is demonstrated with improved system performance.

针对宽带隙功率器件，探讨了并联功率器件的智能平衡问题。为了提高GaN和SiC开关的坚固性和开关性能，提出并实现了一种考虑斩波电路的混合开关概念，并采用适当的栅延迟和栅补偿控制来控制并联的SIC器件。提出了一种采用单栅极驱动的智能开关控制技术的GaN/SiC并联混合开关，提高了系统性能。

项目成果

Current Balancing of Parallel-Connected SiC devices using Active Gate Control

使用有源栅极控制的并联 SiC 器件的电流平衡

• 发表时间: 2022
• 作者: Daiki Yamaguchi;Shinji Sato;Atsushi Yao;Hiroshi Sato;Ravi nath Tripathi
• 通讯作者: Ravi nath Tripathi

Hybrid GaN-SiC Power Switches for Optimum Switching, Conduction and Free-Wheeling Performance

混合 GaN-SiC 功率开关可实现最佳开关、传导和续流性能

• 发表时间: 2022
• 作者: 畑 勝裕，鈴木 定典，高宮 真;Battuvshin
• 通讯作者: Battuvshin