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Spectroscopy of chemically- and gate-doped carbon nanotubes at the ensemble and single particle level

化学掺杂和栅极掺杂碳纳米管在整体和单粒子水平上的光谱学

基本信息

批准号：
315402952
负责人：
Professor Dr. Tobias Hertel
金额：
--
依托单位：
Institut für Physikalische und Theoretische Chemie
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2016
资助国家：
德国
起止时间：
2015-12-31 至 2022-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/315402952?language=en
关键词：
Spectroscopy chemically gate doped carbon

项目摘要

Doping of semiconductors by the introduction or removal of charges can be used for controlling their electronic and optical structure. This offers many opportunities for the fabrication of versatile materials with new properties, essentially because any semiconductor attribute or phenomenon such as conductivity, energy transport and dissipation, as well as their ability to detect and emit light are affected by charge carrier concentrations. The micro- and nanoelectronic revolution of the past 50 years, for example, would not have been possible without a fundamental understanding of semiconductor doping. Similarly, the doping of nanoscale semiconductors plays a key role for the development of future technologies but is not nearly as well understood or matured. In particular the control and spectroscopic assessment of the doping of one-dimensional semiconductors is sometimes still in its infancy.Within the proposed research project we will seize the opportunity presented by recent advances with the fabrication of pure semiconducting carbon nanotube (s-SWNTs) samples and by new spectroscopic developments, for developing a better understanding and greater control of the doping of s-SWNTs.The key objectives of the proposed research aim at A) the development of a robust methodology for the doping of s-SWNTs by chemical and by physical processes, B) the investigation of the sensitivity of different spectroscopic probes for the detection of doping levels, C) a better understanding and possibly elimination of heterogeneity in doped s-SWNTs and D) laying the foundations for quantitative predictions of the effect of doping on the properties of s-SWNTs and other one-dimensional semiconductors.To meet these objectives we will combine recent advances with the preparation of semiconducting s-SWNT samples with new spectroscopic tools for the investigation of doped s-SWNTs at the ensemble and single particle level. In particular we will work toward a better understanding of the characteristics of doping, induced by chemical and by physical means. Chemical doping will here be achieved by covalent as well as non-covalent interactions of s-SWNTs with redoxactive agents while physical doping will be obtained by field-induced control of electrochemical potentials.The results of this research are expected to facilitate future quantitative analysis and utilization of doped s-SWNTs for fundamental research as well as for potential applications.

通过引入或移除电荷来掺杂半导体可用于控制其电子和光学结构。这为制造具有新性能的多功能材料提供了许多机会，主要是因为任何半导体属性或现象，如导电性、能量传输和耗散，以及它们检测和发光的能力都受到载流子浓度的影响。例如，如果没有对半导体掺杂的基本了解，过去50年的微电子和纳米电子革命是不可能的。同样，纳米级半导体的掺杂对未来技术的发展起着关键作用，但还没有得到很好的理解或成熟。特别是对一维半导体掺杂的控制和光谱评估有时还处于起步阶段。在拟议的研究项目中，我们将抓住最近在制备纯半导体碳纳米管(S-SWNTs)样品方面的进展和新的光谱发展带来的机遇，更好地了解和更好地控制S纳米管的掺杂。拟议研究的主要目标旨在：A)发展一种稳健的方法，用于通过化学和物理过程掺杂S-SWNTs；B)研究不同光谱探针检测掺杂水平的灵敏度；C)更好地理解并可能消除掺杂的S单壁碳纳米管中的不均一性，D)为定量预测掺杂对S单壁碳纳米管和其他一维半导体的性能的影响奠定了基础。为了实现这些目标，我们将把最近的进展与半导体S单壁碳纳米管样品的制备结合起来，并使用新的光谱工具在系综和单粒子水平上研究掺杂的S单壁碳纳米管。特别是，我们将努力更好地了解由化学和物理手段引起的兴奋剂的特点。S-单壁碳纳米管通过与氧化还原剂的共价和非共价相互作用实现化学掺杂，而物理掺杂将通过场感应控制电化学势来实现。本研究结果有望促进掺杂S-单壁碳纳米管的定量分析和利用，为基础研究和潜在的应用提供帮助。

项目成果

期刊论文数量（3）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Single‐Walled Carbon Nanotubes as an Additive in Organic Photovoltaics: Effects on Carrier Generation and Recombination Dynamics

单壁碳纳米管作为有机光伏添加剂：对载流子生成和复合动力学的影响

DOI：
10.1002/solr.202101010
发表时间：
2022
期刊：
Solar RRL
影响因子：
7.9
作者：
Abasi Abudulimu;Klaus Eckstein;Mirella El Gemayel;Imge Namal;Adam B Phillips;Randy J Ellingson;Michael J Heben;Tobias Hertel;Sebastian B Meier;Larry Lüer
通讯作者：
Larry Lüer

Optical Spectroscopy of Doped Carbon Nanotubes

掺杂碳纳米管的光谱分析