Research and development of new type photo-devices using compound semiconductors

温度依赖的电流-电压，导纳谱，对氟化铯（CsF）处理的CIGS太阳能电池进行了热光浸泡（HLS）和后续热浸泡（HS）处理前后的电容-电压测量，分析了器件的缺陷和亚稳态特性，发现CsF处理的CIGS太阳能电池的HLS处理形成了CsF-CIGS。少数载流子复合的诱导缺陷。导纳测量显示在HLS和随后的HS之后浅能量位置向更高的值移动，低温C-V测试表明，HLS和随后的HS处理（HLS/HS）钝化了IIICu反位缺陷。

Temperature-dependent current-voltage, admittance spectroscopy, capacitance-voltage measurements were performed on cesium fluoride (CsF)-treated CIGS solar cell before and after heat-light soaking (HLS) and subsequent heat-soaking (HS) treatments to analyse the defect and metastable properties of the device.It was found that HLS treatment of CsF-treated CIGS solar cell formed cesium-induced defects for minority carrier recombination.The admittance measurement showed a shift of the shallow energy position to a higher value after HLS and subsequent HS, which was due to the formation of a secondary diode toward the CIGS/molybdenum contact.The low-temperature C-V measurement showed that HLS and subsequent HS treatment (HLS/HS) passivate IIICu anti-site defects.