Epitaxy of intra-plane ordered (In,Ga)N monolayers towards single photon emission
Epitaxy of intra-plane ordered (In,Ga)N monolayers towards single photon emission
批准号:
323347164
负责人:
Dr. Martin Albrecht
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2017
资助国家:
德国
项目状态:
已结题
起止时间:
2016-12-31 至 2020-12-31
中文摘要
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英文摘要
Single photon emitters hold the promise to serve as quantum bits in quantum communication, linear optical quantum computing and cryptography. Due to their thermal and chemical stability, their wide wavelength tunability from the visible to the ultraviolet spectral range (In,Ga,Al)N quantum dots are the most promising candidates for such devices. Despite the success in growing quantum dots, operating up to 300 K in 2014, the inherent piezoelectric fields, alloy fluctuations, size and shape control of the active zone pose severe challenges with respect to fast and efficient generation of a single photon flux at a well-defined wavelength. These issues severely decrease the potential of self-organized QDs for scalable systems since each QD is practically an individual structure. The scientific mission of this project is to tackle these issues by exploring (In,Ga)N monolayers as the active zone in site controlled nanowires for single photon emission. Depending of the growth conditions, (In,Ga)N monolayers can be grown with an ordered configuration of Indium and Gallium atoms within the layer. This strongly reduces spatial alloy composition fluctuations and thus the inhomogeneous broadening of the emission. The final goal of this project is to embed ordered (In,Ga)N monolayers in identically shaped nanowires by means of the top-down approach. This enables three-dimensional charge carrier confinement, permitting discrete energy levels for single photon emission. Due to the well-defined composition of the ordered (In,Ga)N monolayers and the uniform shape of the quantum wires, such quantum dots become uniform entities. These above-mentioned objectives will be achieved by means of a bilateral collaboration between the Leibniz-Institute for Crystal Growth (IKZ) and the Peking University (PKU) in China. We aim to unify a rich portfolio of competencies in the field of molecular beam epitaxy (MBE) with high-level structural analysis techniques carried out by means of transmission electron microscopy (TEM). Within this framework, both institutions will benefit from a mutual collaboration due to access to unique characterization methods and samples respectively, allowing them to expand the knowledge in their respective fields.
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Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers
用于低阈值紫外等离子体纳米激光器的单晶铝膜的分子束外延
DOI:
10.1063/1.5033941
发表时间:
2018-06-04
期刊:
APPLIED PHYSICS LETTERS
影响因子:
4
作者:
[Liu, Shuanglong, Sheng, Bowen, Shen, Bo]
通讯作者:
Shen, Bo
Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering
拉曼散射揭示 InN:Mg 中 Mg 主晶格位置的转变
DOI:
10.1016/j.spmi.2018.06.026
发表时间:
2018-08
期刊:
Superlattices and Microstructures
影响因子:
3.1
作者:
[Zhaoying Chen, Jingyang Sui, Xinqiang Wang, Kumsong Kim, Ding Wang, Ping Wang, Tao Wang, Xin Rong, Hiroshi Harima, Akihiko Yoshikawa, Weikun Ge, Bo Shen]
通讯作者:
Bo Shen
High-electron-mobility InN epilayers grown on silicon substrate
在硅衬底上生长的高电子迁移率 InN 外延层
DOI:
10.1063/1.5017153
发表时间:
2018-04
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Huapeng Liu, Xinqiang Wang, Zhaoying Chen, Xiantong Zheng, Ping Wang, Bowen Sheng, Tao Wang, Xin Rong, Mo Li, Jian Zhang, Xuelin Yang, Fujun Xu, Weikun Ge, Bo Shen]
通讯作者:
Bo Shen
Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure
基于位点控制光喇叭结构中 InGaN 量子点的单光子源
DOI:
10.1063/1.5100323
发表时间:
2019-07
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Xiaoxiao Sun, Ping Wang, Tao Wang, Duo Li, Zhaoying Chen, Ling Chen, Kang Gao, Mo Li, Jian Zhang, Weikun Ge, Yasuhiko Arakawa, Bo Shen, Mark Holmes, Xinqiang Wang]
通讯作者:
Xinqiang Wang
Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN
原子薄 AlN 中大带隙能量的实验证据
DOI:
10.1002/adfm.201902608
发表时间:
2019
期刊:
Advanced Functional Materials
影响因子:
19
作者:
[Wang Ping, Wang Tao, Wang Hui, Sun Xiaoxiao, Huang Pu, Sheng Bowen, Rong Xin, Zheng Xiantong, Chen Zhaoying, Wang Yixin, Wang Ding, Liu Huapeng, Liu Fang, Yang Liuyun, Li Duo, Chen Ling, Yang Xuelin, Xu Fujun, Qin Zhixin, Shi Junjie, Yu Tongjun, Ge Weikun, Shen Bo, Wang Xinqian]
通讯作者:
Wang Xinqian
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Science of polar homo- and heterointerfaces
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批准号:198775133
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项目类别:Research Grants
-
资助金额:$0.0万
-
财政年份:2012
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负责人:Dr. Martin Albrecht
-
依托单位:
Wachstum, experimentelle Analyse und ab-initio-basierte theoretische Simulation des Einflusses von Fremdatomen auf Wachstum und Eigenschaften von Quantenpunkten
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批准号:5420126
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项目类别:Research Grants
-
资助金额:$0.0万
-
财政年份:2004
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负责人:Dr. Martin Albrecht
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依托单位:
国内基金
海外基金
影响外商直接投资在我国产生行业内(intra-industry)溢出效应的行业要素
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批准号:70473045
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项目类别:面上项目
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资助金额:14.0万元
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批准年份:2004
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负责人:陈涛涛
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依托单位: