Science of polar homo- and heterointerfaces

极性同质和异质界面科学

• 批准号: 198775133
• 负责人: Dr. Martin Albrecht
• 金额: --
• 依托单位: Leibniz-Institut für Kristallzüchtung (IKZ)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2012
• 资助国家: 德国
• 起止时间: 2011-12-31 至 2015-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/198775133?language=en
• 关键词: Science; polar; homo; heterointerfaces

In this project we explore the fundamental science of epitaxial interfaces with a discontinuity in electrical polarization in nitride-nitride and nitride-oxide systems. We aim to understand the structural, chemical, and electronic features that regulate the interfacial electronic properties. We base this proposal on a hypothesis that vertical and lateral heteropolar interfaces that approach „semiconductor-grade“ quality can be prepared, and that their study will lead to exciting opportunities for fundamental advances in interface physics and optic/electronic functionality. Our technical program will refine synthesis techniques that enable hybrid thin film structures of oxides and nitrides with heretofore unachievable material quality. By collaboration between synthesis and characterization groups we will be able to identify and understand the structural and chemical features that enable, interfere, or enhance heteropolar interface coupling. Our project will advance the general understanding of heteropolar interface . property relationships. Achieving this understanding will propel research in hybrid systems that lead to new physics, new functionality, an expanded set of low dimension optoelectronic devices, and a pathway to smart structures that utilize in a new way the non-linear dielectric response of ferroelectrics.

在这个项目中，我们探索了氮化物-氮化物和氮化物-氧化物系统中电极化不连续的外延界面的基础科学。我们的目标是了解的结构，化学和电子功能，调节界面的电子特性。我们的这一建议基于一个假设，即可以制备接近“超导级”质量的垂直和横向异极界面，并且它们的研究将为界面物理学和光学/电子功能的根本进步带来令人兴奋的机会。我们的技术计划将完善合成技术，使混合薄膜结构的氧化物和氮化物迄今无法实现的材料质量。通过合成和表征小组之间的合作，我们将能够识别和理解能够实现，干扰或增强异极界面耦合的结构和化学特征。我们的项目将促进对异极界面的普遍理解。财产关系。实现这一理解将推动混合系统的研究，导致新的物理，新的功能，一套扩展的低维光电器件，以及智能结构的途径，以新的方式利用铁电体的非线性介电响应。

项目成果

Polarity Control in Group-III Nitrides beyond Pragmatism

• DOI: 10.1103/physrevapplied.5.054004
• 发表时间: 2016-05-03
• 期刊: PHYSICAL REVIEW APPLIED
• 影响因子: 4.6
• 作者: Mohn, Stefan;Stolyarchuk, Natalia;Albrecht, Martin
• 通讯作者: Albrecht, Martin

On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates

块状 AlN 衬底中 4 7 eV 吸收带和 2 8 eV 发射带的起源

• DOI: 10.1149/07205.0031ecst
• 发表时间: 2016
• 作者: D. Alden;Z. Bryan;B. Gaddy;I. Bryan;G. Callsen;A. Koukitu;Y. Kumagai;A. Hoffmann;D. Irving;Z. Sitar;R. Collazo
• 通讯作者: R. Collazo

Properties of AlN based lateral polarity structures

AlN基横向极性结构的特性

• DOI: 10.1002/pssc.201300287
• 发表时间: 2014
• 期刊: Physica Status Solidi (c)
• 作者: R. Kirste;S. Mita;M.P. Hoffmann;L. Hussey;W. Guo;I. Bryan;Z. Bryan;J. Tweedie;M. Gerhold;A. Hoffmann;R. Collazo;Z. Sitar
• 通讯作者: Z. Sitar

UV second harmonic generation in AlN waveguides with modal phase matching

具有模态相位匹配的 AlN 波导中的 UV 二次谐波生成

• DOI: 10.1364/ome.6.002014
• 发表时间: 2014
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: T. Troha;M. Rigler;D. Alden;I. Bryan;W. Guo;R. Kirste;S. Mita;M. D. Gerhold;R. Collazo;Z. Sitar;M. Zgonik
• 通讯作者: M. Zgonik

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

• DOI: 10.1063/1.4962017
• 发表时间: 2016-09-14
• 期刊: JOURNAL OF APPLIED PHYSICS
• 影响因子: 3.2
• 作者: Kaess, Felix;Mita, Seiji;Sitar, Zlatko
• 通讯作者: Sitar, Zlatko